Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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TL;DR: In this article, the effects of series capacitors on receiving end voltages are illustrated via phasor diagrams and power-voltage characteristics, and the unique voltage profile of the compensated distribution circuit is presented.
Abstract: This paper summarizes many of the considerations in the application of series capacitors on radial distribution circuits. The effects of series capacitors on receiving end voltages are illustrated via phasor diagrams and power-voltage characteristics. The unique voltage profile of the compensated distribution circuit is presented. Discussed are the various types of distribution circuit problems that series capacitors typically used to solve. Application guidelines are presented to help minimize oscillatory interactions with transformers and motors. The various protection schemes used in practical series capacitor banks are discussed. The information required to specify distribution series capacitor banks is outlined.
36 citations
TL;DR: In this paper, the potential of triethylmethylammonium tetrafluoroborate (TTHM) as an electrolyte in double-layer capacitors was investigated.
36 citations
Patent•
16 Jan 2003TL;DR: In this paper, a method for sensing the resistance value of a resistor-based memory cell is proposed, where a current is driven through all unused row lines of a memory array while grounding the row line associated with the selected cell, thereby forcing the current through a comparatively low equivalent resistance formed by the parallel coupling of all unselected memory cells and also through a relatively high resistance of the selected memory cell.
Abstract: A method for sensing the resistance value of a resistor-based memory cell. A current is driven through all unused row lines of a memory array while grounding the row line associated with the selected cell, thereby forcing the current through a comparatively low equivalent resistance formed by the parallel coupling of all unselected memory cells and also through a comparatively high resistance of the selected memory cell. The voltage on a column line corresponding to the selected memory cell is then measured to ground. The voltage level corresponds to either one of two resistance values (i.e., signifying either a logic “HIGH” or a logic “LOW”).
36 citations
TL;DR: In this article, the authors present detailed quantitative results from the computer simulation of the behavior of a photovoltaic device having a large distributed series resistance component (due to the sheet resistance of the emitter layer).
Abstract: We present detailed quantitative results from the computer simulation of the behavior of a photovoltaic device having a large distributed series resistance component (due to the sheet resistance of the emitter layer). An appropriate equivalent lumped series resistance for the model device is defined and found to vary significantly with the terminal condition and with the incident intensity. Device behavior is modeled for light-generated current densities corresponding to the illumination range ≈ 1 10 to ∼ 3 × AM 1 over a conventional silicon solar cell. It is apparent from the computer simulation that series resistance output losses for such a device cannot be characterized by a constant equivalent lumped series resistance over the normally expected range of operating conditions.
35 citations
TL;DR: In this article, a nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization.
Abstract: Nanopolyaniline/p-type porous silicon (NPANI/PSi) heterojunction films were chemically fabricated via in situ polymerization. The composition and morphology of the nanopolymer were confirmed using Fourier transform infrared, scanning electron microscopy, UV-visible, and transmission electron microscopy techniques. The results indicated that the polymerization took place throughout the porous layer. The I-V measurements, performed at different temperatures, enabled the calculation of ideality factor, barrier height, and series resistance of those films. The obtained ideality factor showed a nonideal diode behavior. The series resistance was found to decrease with increasing temperature.
35 citations