Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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18 May 2003
TL;DR: In this article, the conversion efficiency of InGaP/(In)GaAs/Ge-based multijunction solar cells has been improved up to 29-30% and 31-32% by technologies, such as double-hetero wide band-gap tunnel junctions, combination with Ge bottom cell with the In-GaP first layer, and precise lattice-matching to Ge substrate by adding 1% indium to the conventional GaAs lattice match structure.
Abstract: The conversion efficiency of InGaP/(In)GaAs/Ge-based multijunction solar cells has been improved up to 29-30% (AM0) and 31-32% (AM1.5 G) by technologies, such as double-hetero wide band-gap tunnel junctions, combination with Ge bottom cell with the InGaP first layer, and precise lattice-matching to Ge substrate by adding 1% indium to the conventional GaAs lattice-match structure. Employing a 1.96 eV AlInGaP top cell should improve efficiency further. For space use, radiation resistance has been improved by technologies such as introducing of an electric field in the base layer of the lowest-resistance middle cell, and EOL current matching of sub-cells to the highest-resistance top cell. A grid structure has been designed for concentrator applications in order to reduce the energy loss due to series resistance, and 36% (AM1.5 G, 100-500 suns) efficiency has been demonstrated.
35 citations
TL;DR: In this paper, the effect of ion solvation on the capacitive behavior of porous carbon electrode in the anti-freezing aqueous electrolytes of double-layer capacitors has been investigated.
35 citations
TL;DR: In this paper, an experimental procedure is presented for the determination of the barrier height of metal-semiconductor contacts that avoids the use of the so-called "ideality factor" n, common in the fit of experimental IV-data.
Abstract: An experimental procedure is presented for the determination of the barrier height of metal-semiconductor contacts that avoids the use of the so called “ideality factor” n, common in the fit of experimental IV-data. We choose the commonly experienced case where the deviation of n from 1 is caused by a combination of recombination current contribution and the influence of series resistance. These effects are introduced into a computer fitting to the experimental forward IV data. We report on very good fitting of theory and experiment. Also, the discrepancy in the φB values determined by ordinary deduction from IV measurements and those obtained from photoelectric measurements practically vanishes if our procedure is used.
35 citations
TL;DR: In this paper, the authors derived analytical expressions for the photogenerated current and voltage of a solar cell, for the power at the maximum power point and for the curve factor of the solar cell.
35 citations
TL;DR: In this article, an analytical method of determination of all the four diode parameters of a silicon solar cell, namely shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current I0 from the variation of slopes of the I-V curve of the cell near short circuit and open circuit conditions with intensity of illumination in a small range of intensity, is presented.
Abstract: An analytical method of determination of all the four diode parameters of the single exponential model of a silicon solar cell, namely shunt resistance Rsh, series resistance Rs, diode ideality factor n and reverse saturation current I0 from the variation of slopes of the I–V curve of the cell near short circuit and open circuit conditions with intensity of illumination in a small range of intensity, is presented for the first time. In a suitable range of intensity the variation of dI/dV at short circuit enables determination of Rsh, whereas the variation of dI/dV at open circuit enables determination of Rs, n and I0. The diode parameters of a silicon solar cell were determined with this method using I–V characteristics of the cell in 40–125 mW cm−2 intensity range of a simulated AM1.5 solar radiation. Theoretical I–V curves generated using so determined values of the diode parameters matched well with the experimental I–V curves of the cell obtained under various intensities of illumination in the above range.
35 citations