Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

GaN / VO2 heteroepitaxial p-n junctions: Band offset and minority carrier dynamics

Abstract: We report on experimental realization of p-n heterojunctions based on p-type GaN, and an n-type correlated oxide, VO2. The band offsets are evaluated by current-voltage and capacitance voltage measurements at various temperatures. A band diagram based on the conventional band bending picture is proposed to explain the evolution of the apparent barier height from electrical measurements and it suggests that the work function of VO2 decreases by ~0.2 eV when it goes through the insulator to metal transtion, in qualitative agreement with Kelvin force microscopy measurements reported in literature. The frequency dependent capacitance measurements allows us to differentiate the miniority carrier effect from the interface states and series resistance contributions, and estimate the minority carrier lifetime in insulating phase of VO2 to be of the order of few microseconds. The nitride-oxide based p-n heterojunctions provide a new dimension

The effect of neutron irradiation on silicon photodiodes

Abstract: Neutron radiation testing was performed on a total of 125 silicon photodiodes to investigate the changes in the device parameters after neutron exposure. A californium-252 source was used to irradiate the photodiodes with 1-MeV equivalent neutrons having fluences in the range of 5*10/sup 11/ to 10/sup 14/ n/cm/sup 2/. The photodiode forward voltage drop, ideality factor, and series resistance increased after neutron exposure. The increased series resistance caused a degradation in diode photocurrent linearity. An empirical expression for post-neutron-irradiation changes in photodiode linearity is presented. Neutron-induced changes in the photodiode shunt resistance and dark current were modeled using simple expressions that allow device designers to estimate changes in photocurrent linearity, shunt resistance, and dark current after neutron exposure. No postirradiation change in the ultraviolet quantum efficiency of diodes without recombination in the front region was observed. This suggests that neutron irradiation does not affect the Si-SiO/sub 2/ interface recombination velocity of p-n junction diodes. >

Effects of post deposition annealing, interface states and series resistance on electrical characteristics of HfO 2 MOS capacitors

Abstract: The purposes of this paper are to investigate the post deposition annealing (PDA) effect on structural and electrical characterizations of HfO2 MOS capacitor and the frequency dependency of series resistance and interface states in this device. PDA processes on the HfO2 films deposited using RF magnetron sputtering system were performed in N2 ambient at 350, 550, 650, and 750 °C. The phase identifications and crystallization degrees of the HfO2 films were determined by using X-ray diffractometry. The grain size of the films was varied from 4.5 to 15.23 with increasing in PDA temperature. The HfO2 MOS capacitors were fabricated using the as-deposited and annealed films for electrical characterization. C–V and G/ω–V measurements were performed at 1 MHz frequency. The C–V characteristics of the MOS capacitor fabricated with film annealed at 550 °C show a better behaviour in terms of the high dielectric constant and low effective oxide charge compared to others. For this device, C–V and G/ω–V measurements were performed in different frequencies ranging from 10 kHz to 1 MHz at room temperature. Obtained results show that series resistance and interface states strongly influence the C–V and G/ω–V behaviour of the MOS capacitor.