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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


Papers
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Journal ArticleDOI
TL;DR: In this paper, it was deduced that activated milled mesophase carbon fibers (AC-mMPCF, MP-series) have a slit pore shape, which affects the accessibility of the electrolyte ion onto the electrode surface.
Abstract: Activated milled mesophase carbon fibers (AC-mMPCF, MP-series) show a higher specific capacitance in spite of a smaller specific surface area than those of powder-type activated carbons (AC-series). This phenomenon can be interpreted to mean that it is difficult to predict the capacitance of an electric double-layer capacitor (EDLC) knowing just the surface area and the pore size. More information is needed about other inherent characteristics of the samples, for example, the equivalent series resistance (ESR), shape of the pores, etc. We investigate here other characteristics of the samples. Consequently, it was deduced that the MP-series of EDLCs have a slit pore shape, which affects the accessibility of the electrolyte ion onto the electrode surface. Moreover, the MP-series of materials have suitable ESR values, and these material properties themselves should be considered as factors that affects the deterioration of the specific capacitance of EDLCs.

31 citations

Journal ArticleDOI
TL;DR: In this article, the authors performed electrical characterization of Al/CdO/p-GaAs diode using currentvoltage and capacitance-conductance-voltage measurements, and obtained the ideality factor and barrier height values of the diode were 2.29 and 0.62 eV, respectively.

31 citations

Journal ArticleDOI
TL;DR: In this article, changes in forward and reverse bias I-V characteristics are reported for irradiated 4H SiC commercial Schottky barrier diodes at fluences up to 2.5/spl times/10/sup 14/ p/cm/sup 2/.
Abstract: Commercial SiC Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. The diodes show excellent resistance to radiation damage. Changes in forward and reverse bias I-V characteristics are reported for irradiated 4H SiC commercial Schottky barrier diodes at fluences up to 2.5/spl times/10/sup 14/ p/cm/sup 2/. Small changes are seen in the reverse bias I-V characteristics with the reverse leakage actually decreasing with increasing irradiation fluence. In forward bias, the series resistance is observed to increase as the fluence increases. The changes in series resistance are interpreted as being due to changes in the effective dopant density due to carrier removal by the defects produced.

31 citations

Proceedings ArticleDOI
Joonho Gil1, Hyungcheol Shin
29 Sep 2003
TL;DR: In this article, a simple wideband inductor model that contains lateral substrate resistance and capacitance to model the decrease in the series resistance at high frequencies, related to lateral coupling through the silicon substrate, has been developed.
Abstract: In this paper, we developed a simple wide-band inductor model that contains lateral substrate resistance and capacitance to model the decrease in the series resistance at high frequencies, related to lateral coupling through the silicon substrate. The model accurately predicts the equivalent series resistance and inductance over a wide-frequency range. Since it has frequency-independent elements, the proposed model can be easily integrated in SPICE-compatible simulators. The proposed model has been verified with measured results of inductors fabricated in a 0.18 /spl mu/m 6-metal CMOS process. We also demonstrate the validity of the proposed model for shielded inductors. The proposed model shows excellent agreement with measured data over the whole frequency range.

31 citations

Journal ArticleDOI
TL;DR: A PT-controlled CCM buck converter is studied and a unique low-frequency oscillation phenomenon is revealed, which results in large undesired inductor-current and output-voltage variations.
Abstract: The pulse-train (PT) control technique for switching dc-dc converters is simple to design and benefits from excellent control performance. Up to now, almost all of the works on PT control are focused on switching dc-dc converters operating in discontinuous conduction mode, with few works reported on PT control of switching dc-dc converters operating in continuous conduction mode (CCM). In this paper, a PT-controlled CCM buck converter is studied and a unique low-frequency oscillation phenomenon is revealed, which results in large undesired inductor-current and output-voltage variations. The effect of equivalent series resistance (ESR) output-capacitor on the low-frequency oscillation is examined. The results indicate that such oscillation occurs when the ESR output-capacitor is relatively small and disappears when it is relatively large. However, a larger ESR will result in a large output-voltage ripple. In order to avoid the low-frequency oscillation and, at the same time, to ensure a small output-voltage ripple, the ICRIF circuit is applied. In this way, a small ESR output-capacitor can be used to decrease the output-voltage ripple. Simulation and experimental results are provided to verify the theoretical analysis.

31 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206