Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
Papers published on a yearly basis
Papers
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19 May 2014TL;DR: In this article, the authors explored factors influencing the lifetime of electrolytic capacitors and calculated the capacitance's life time in dedicated application, and compared the performance of different types of capacitors in dedicated applications.
Abstract: This article explores factors influencing the lifetime of electrolytic capacitors. Calculation of capacitor's life time in dedicated application is also described in the article. Finally comparisons of the computed results between several types of electrolytic capacitors in dedicated application are provided.
29 citations
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29 Nov 1977
TL;DR: In this article, a field effect transistor with an additional highly doped source region contiguous to the source region and protruding into the channel having a shape approximately conforming to the shape of the depletion layer was proposed to reduce the series resistance from the source to the pinch-off point.
Abstract: A field effect transistor having an additional highly doped source region contiguous to the source region and protruding into the channel having a shape approximately conforming to the shape of the depletion layer and almost contiguous with the depletion layer in a desired operative state, thereby reducing the series resistance from the source to the pinch-off point without increasing the capacitance between the source and the gate. The improvement is particularly effective for devices of a high power, high speed and high frequency use and is compatible with the integrated circuit techniques.
29 citations
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TL;DR: In this paper, a novel method has been used to smooth out the energy band discontinuity at the heterojunction of AlAs and GaAs in quarter-wave distributed Bragg reflectors (DBRs) by linearly grading the Al and Ga compositions.
29 citations
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TL;DR: In this article, the authors provide a theoretical base and an error analysis to justify the use of the series-to-parallel transfer technique at low resistance levels using a four-terminal equivalent circuit suggested by Searle.
Abstract: The range and accuracy of resistance calibration can be increased by the use of series and parallel connections of four-terminal resistors. Low value resistors can be permanently connected in series and reconnected in parallel by using Hamon's1 technique to change resistance level without materially affecting resistance accuracy. The resistors are connected in parallel by attaching shorting bars to one terminal at each end of each resistor and attaching matched resistors in series with the other terminals. High accuracy can be attained even though lead and connection resistance are relatively high. The purpose of this paper is to provide a theoretical base and an error analysis to justify the use of the series-to-parallel transfer technique at low resistance levels. The analysis uses a four-terminal equivalent circuit suggested by Searle.2 The accuracy of series and parallel connections of groups of like resistors is investigated in terms of the equivalent circuit. Procedures are developed for determining the connection accuracy of a set of resistors in parallel or series.
29 citations
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29 Dec 1999TL;DR: A compound collector double heterojunction bipolar transistor (CCHBT) as mentioned in this paper incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow band gap collector region.
Abstract: A compound collector double heterojunction bipolar transistor (CCHBT) incorporates a collector comprising two layers: a wide bandgap collector region (e.g., GaAs), and a narrow bandgap collector region (e.g., InGaP). The higher electric field is supported in the wide bandgap region, thereby increasing breakdown voltage and reducing offset voltage. At the same time, the use of wide bandgap material in the depleted portion of the collector, and a higher mobility material toward the end and outside of the depletion region, reduces series resistance as well as knee voltage.
29 citations