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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


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Proceedings ArticleDOI
19 Jun 2011
TL;DR: In this article, a parallel plate nonlinear transmission line (NLTL) was constructed using a circuit simulation code using the experimentally measured form of the nonlinear capacitance, and the diagnostics used on the experimental system are Bdots along the line and a current viewing resistor at the load.
Abstract: A parallel plate nonlinear transmission line (NLTL) was constructed. Periodic loading of nonlinear dielectric slabs provides the nonlinear capacitance and the gaps between provide linear inductive interconnects, this is essentially the same design used by Ikezi [1],[2]. The NLTL was modeled in a circuit simulation code using the experimentally measured form of the nonlinear capacitance. Dielectric loss included in the model as an equivalent series resistance derived from the measured loss tangent data affects the formation of RF oscillations. The diagnostics used on the experimental system are Bdots along the line and a current viewing resistor at the load. The diagnostics provide a measurement of the pulse evolution as it travels down the line. The waveforms from the experimental line qualitatively agree with the circuit model, showing no strong RF formation as a result of the loss.

29 citations

01 Jan 2010
TL;DR: A combined energy-based model with an empirical physics of failure model for degradation analysis and prognosis of electrolytic capacitors in DC-DC power converters and Stochastic simulation methods applied to the combined model help predict how system performance deteriorates with time.
Abstract: This paper proposes a combined energy-based model with an empirical physics of failure model for degradation analysis and prognosis of electrolytic capacitors in DC-DC power converters. Electrolytic capacitors and MOSFET’s have higher failure rates than other components in DC-DC converter systems. For example, in avionics systems where the power supply drives a GPS unit, ripple currents can cause glitches in the GPS position and velocity output, and this may cause errors in the Inertial Navigation (INAV) system causing the aircraft to fly off course. We have employed a topological energy based modeling scheme based on the bond graph (BG) modeling language for building parametric models of electrical domain systems. Our current work adopts a physics of failure model (Arrhenius Law) for equivalent series resistance (ESR) increase in electrolytic capacitors subjected to electrical and thermal stresses. Experiments for capacitor degradation were conducted for collecting degradation ESR data. Parameter re-estimation for the failure model is done using the experimental data. The derived degradation model of the capacitor is reintroduced into the DC-DC converter system model to study changes in the system performance using Monte Carlo simulation methods. Stochastic simulation methods applied to the combined model help us predict how system performance deteriorates with time.

29 citations

Journal ArticleDOI
01 Jan 1975-Scopus
TL;DR: A special-layered Schottky solar cell has been constructed which produces 95 percent sunlight efficiency over a 1-cm2area This solar cell had a fill factor of 060 compared to 058 for a commercial p-n silicon cell as mentioned in this paper.
Abstract: A special-layered Schottky solar cell has been constructed which produces 95-percent sunlight efficiency over a 1-cm2area This solar cell has a fill factor of 060 compared to 058 for a commercial p-n silicon cell Series resistance of 5 Ω is shown to reduce the theoretical fill factor from 067 to 042 for a Schottky cell The diode quality factor n is shown to significantly increase open-circuit voltage and yet not appreciably influence the fill factor

29 citations

Journal ArticleDOI
TL;DR: In this article, the series and shunt resistances of hybrid organic-inorganic hybrid solar cells were tuned to observe its effect on the device performance, and it was found that with suitable substrate scales and physical tailoring methods, the shunt and series resistances can be adjusted to eliminate the unfavorable charge trapping phenomenon.

29 citations

Journal ArticleDOI
TL;DR: In this paper, two TLM (Transfer Length Method) dedicated structures were presented to extract both the a-Si:H(n)/TCO and a-si:H (p)/TCo contact resistivity.

29 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206