Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

An efficient method for determining threshold voltage, series resistance and effective geometry of MOS transistors

Abstract: An accurate and robust method of extracting the threshold voltage, the series resistance and the effective geometry of MOS transistors is presented. The method is based on efficient nonlinear optimization using an iterative linear regression procedure which usually converges in less than four rounds. Thereby extracted parameters are obtained from analytical expressions for the solutions to a linear system of equations whereby time consuming numerical differentiations are avoided. MOSFET parameters are explicitly identified as parameters of an underlying widely used device model that is a good approximation for operation in the linear region. The method is particularly suitable for process characterization and can be used on as few as twelve data points (three data points from each of four different size transistors). By connecting external resistors in series with the transistors, we show that the extracted values of the parameters are independent of the series resistance.

Electrolytic or film capacitors

Abstract: Over the last eight years, significant improvements have been made in the field of polypropylene capacitors. Thinner films and more sophisticated metallization techniques have allowed the range of operating voltages to be lowered to some hundreds of volts. The upper voltage area of the electrolytic capacitors is now covered by the polymer film capacitors. This overlapping is examined through a comparison of the main electrical criteria.

Two-frequency C-V correction using five-element circuit model for high-k gate dielectric and ultrathin oxide

Abstract: A new circuit model of five elements has been proposed for the two-frequency capacitance-voltage (C-V) correction of high-k gate dielectric and ultrathin oxide. This five-element circuit model considered the static and dynamic dielectric losses in a lossy MOS capacitor, the parasitic well/substrate resistance, and the series inductance in the cables and probing system. Each of the circuit elements could be easily extracted from the two-frequency C-V and static current-voltage (I-V) measurements if some criteria are well satisfied. In addition, this model can also be transformed into another two four-element circuit models to simplify the analysis and calculations, depending on the gate leakage current.

Analysis of interface states and series resistance for Al/PVA:n-CdS nanocomposite metal–semiconductor and metal–insulator–semiconductor diode structures

Abstract: This paper presents the fabrication and characterization of Al/PVA:n-CdS (MS) and Al/Al2O3/PVA:n-CdS (MIS) diode. The effects of interfacial insulator layer, interface states (N ss ) and series resistance (R s ) on the electrical characteristics of Al/PVA:n-CdS structures have been investigated using forward and reverse bias I–V, C–V, and G/w–V characteristics at room temperature. Al/PVA:n-CdS diode is fabricated with and without insulator Al2O3 layer to explain the effect of insulator layer on main electrical parameters. The values of the ideality factor (n), series resistance (R s ) and barrier height (ϕ b ) are calculated from ln(I) vs. V plots, by the Cheung and Norde methods. The energy density distribution profile of the interface states is obtained from the forward bias I–V data by taking into account the bias dependence ideality factor (n(V)) and effective barrier height (ϕ e ) for MS and MIS diode. The N ss values increase from mid-gap energy of CdS to the bottom of the conductance band edge for both MS and MIS diode.