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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


Papers
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Journal ArticleDOI
K. Çınar1, C. Coşkun1, Sakir Aydogan1, Hatice Asıl1, Emre Gür1 
TL;DR: In this paper, the effect of electron irradiation on Au/Ni/6H-SiC diode and Schottky contacts was studied by current voltage (I-V) characterization at room temperature.
Abstract: The effect of electron irradiation on Au/Ni/6H-SiC and Au/Ni/4H-SiC Schottky contacts has been studied by current voltage (I–V) characterization at room temperature. The diodes have been subjected to the electron irradiation at various energies (6, 12 and 15 MeV) and influence of the electron irradiation on the diode parameters such as barrier height, ideality factor, and series resistance has been studied. Cheung functions, Norde model and conductance method have been used to determine the diode parameters. The ideality factor of the diodes is greater than unity indicating activation of some other current transport mechanism(s). The series resistances of the diodes increase by increasing electron energy. The reverse current increases for the Au/Ni/6H-SiC diode after each electron irradiation experiment, while decreasing trend is observed for Au/Ni/4H-SiC diode. Decrease in the barrier height of Au/Ni/4H-SiC diode is observed and mainly attributed to the increase of the reverse current, while the decrease of the forward current is caused by increase in series resistance, for high electron irradiation energies.

28 citations

Journal ArticleDOI
TL;DR: In this article, an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes was derived and the model accurately describes the parasitic fringe capacitances due to a lateral pn junction and can be extended to other geometries, such as vertical and interdigitated junctions.
Abstract: We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes. This model accurately describes the parasitic fringe capacitances due to a lateral pn junction and can be extended to other geometries, such as vertical and interdigitated junctions. The model is used to identify the waveguide slab to rib height ratio as a key geometric scaling parameter for the modulation efficiency and bandwidth for lateral diodes. The fringe capacitance is a parasitic effect that leads to a decrease of about 20% in the modulation bandwidth of typical SOI diodes without a corresponding increase in the modulation efficiency. From the scaling relations, the most effective way to increase the modulation bandwidth is to reduce the series resistance of the diode.

28 citations

Journal ArticleDOI
TL;DR: In this paper, the external resistance of the self-aligned silicided source/drain structure is examined by two-dimensional simulation considering recession of the contact interface due to the consumption of silicon during the silicidation process.
Abstract: The external resistance of the self-aligned silicided source/drain structure is examined by two-dimensional simulation considering recession of the contact interface due to the consumption of silicon during the silicidation process. It is observed that the recessed contact interface forces a significant amount of current to flow into the high-resistivity part of the junction, resulting in an increase of resistance as large as several hundred ohms-micrometers in comparison with the surface contact structure. The increase scales up with the scaledown of the minimum feature size, and the expected benefits of the salicide structure diminish for the sub-half-micrometer devices. A simple analytical explanation is proposed. By considering the recession of the contact interface, the reported high external resistance of short-channel MOSFETs is explained. Different source/drain contact types are compared, and it is concluded that the conventional salicide process should be modified for sub-half-micrometer devices. >

28 citations

Journal ArticleDOI
Xinan Zhang1, Junxia Zhai1, Xiankun Yu1, Linghong Ding1, Weifeng Zhang1 
TL;DR: In this paper, the structural and optical properties of flexible Ag/ZnO Schottky diodes were investigated by X-ray diffractometry and spectrophotometry.

28 citations

Journal ArticleDOI
TL;DR: In this article, a monochromatic GaAs photovoltaic (PV) converter for coupling to laser beams in the wavelength of 790-840 nm was designed and its structure, layer thicknesses, doping levels of the emitter and base, and antireflection coating was optimized.

28 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206