Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

On the current-voltage characteristics of epitaxial Schottky barrier diodes

Abstract: The J-V characteristics of epitaxial Schottky barrier diodes are analyzed. Based on the assumption of negligible recombination in the epitaxial layer, formal solution from which the J-V characteristics can be calculated is derived. The solution is valid for all injection levels and reduces to the form I = Is[exp (q(V−IR)/kT) − 1], where R is the series resistance of the epitaxial layer, under C12 C12V low-injection conditions. The analysis is justified by very close correspondence with exact numerical calculations using the Finite Element Device Analysis Program (FIELDAY) in which thermionic emission boundary conditions are implemented for both electrons and holes. It is shown that for low barrier Schottky diodes the minority carrier injection is negligible and the expression I = Is[exp (q(V−IR)/kT) − 1] describes the I-V characteristics over large bias range. For high barrier C12 C12 V Schottky diodes the exact solution must be used as minority carriers are injected and the series resistance is decreased due to conductivity modulation effect.

Two Novel Structures for Tunable MEMS Capacitor with RF Applications

Abstract: —Two novel structures for high-Q MEMS tumble capacitors are presented. The proposed designs include full plate as well as the comb structured capacitors. They can be fabricated employing surface micromachining technology which is CMOS-compatible. The structures do not require the cantilever beams which introduce considerable series resistance to the capacitor and decrease the quality factor. Therefore, our proposed structures achieve better Q in a smaller die area. The simulated results for 1 pF full plate capacitor shows a tuning range of 42% and a Q of 47 at 1 GHz. However, with the same initial capacitance, but the comb structure, the tuning range is increased to 43% but the Q is decreased to 45 at 1 GHz. The simulated Pull-in voltage with no residual stress is 3.5 V for both capacitors. The S11 responses are reported for a frequency range from 1 up to 4 GHz.

MEMS Solutions in RF applications

Abstract: MEMS devices are ideal tuning element since in a non-50 Ohm system, equivalent series resistance (ESR) is the primary source of losses in a tuning system. MEMS have less than 20% of the ESR of solid state devices and are on par with the best fixed-value passive components. Figure 2 shows the usable Q of Cavendish RF MEMS device for the frequency range and associated capacitance state.

Measurement of solar cell ac parameters using the time domain technique

Abstract: The instrumentation to measure solar cell ac parameters [cell capacitance $(C_P)$ and cell resistance $(R_P)$] using the time domain technique is developed. The cell capacitance $(C_P)$ and series resistance (r) are calculated using open circuit voltage decay (OCVD) technique. It is calibrated with the help of an electrical network with passive components similar to ac equivalent circuit of a solar cell consisting of precision resistors and capacitors. The maximum error observed in the measurement of resistor and capacitor value is ±3.5%. The cell resistance $(R_P)$ is calculated from I–V characteristics of solar cell. The data obtained in time domain technique is compared with the impedance spectroscopy technique data measured on same solar cell and it is found that the deviation in cell capacitance and resistance are within ±8%.