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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


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Journal ArticleDOI
TL;DR: In this paper, a modeling approach based on the complex form of the capacitor impedance to build its equivalent electrical circuit is presented, which proved to be more accurate than the traditional modeling technique of identifying the electrical parameters using the modulus of the component impedance.
Abstract: Metalized film capacitors are commonly used components in power electronics applications and their characteristics are drastically dependent on their operating frequency. Parasitic parameters could appear at low and high frequencies and disturb substantially the behavior of the component. Proper design of metalized film capacitors requires an understanding of all parasitic parameters' sources and their impacts on the circuit operation. This paper presents a modeling approach based on the complex form of the capacitor impedance to build its equivalent electrical circuit. This approach proved to be more accurate than the traditional modeling technique of identifying the electrical parameters using the modulus of the component impedance. Two different types of capacitors were tested; experimental results allowed to validate our model from 10 kHz to 35 MHz.

26 citations

Journal ArticleDOI
TL;DR: It has been proven by modeling, simulations, and experiments that the time constant of the photodiode does not change significantly with the illumination spot area, and the dependence of the degradation of the sensitivity on the incident wavelength and the diode vertical stack is examined.
Abstract: Recently, a silicon-based ultrashallow-junction photodiode (B-layer diode) has been reported, with very high and very stable sensitivity in the vacuum-ultraviolet and extreme-ultraviolet spectral ranges. However, the ultrashallow nature of the junction leads to a high series resistance of the photodiode if no conductive capping layers are used. In a recent paper by Shi , a study on the relation between the sensitivity and the series resistance of the B-layer diodes, which can be large due to the shallow-junction depth, was presented. In this paper, an extensive analysis of the photodiode electrical and optical performance parameters and their interrelation is given. The influence of the series resistance on the response time of the photodiode for different illumination patterns is studied theoretically and also experimentally verified. It has been proven by modeling, simulations, and experiments that the time constant of the photodiode does not change significantly with the illumination spot area. This effect is due to temporary variations, going in opposite directions, of the equivalent series resistance, and the junction capacitance values found at the first instant a photogenerated charge are locally stored in the photodiode p-n junction. Also, the dependence of the degradation of the sensitivity on the incident wavelength and the diode vertical stack is examined through analysis and experimentation.

26 citations

Journal ArticleDOI
TL;DR: In this paper, the analytical model of Fischer and Plagwitz was extended to describe the rear surface recombination for very low wafer thicknesses and an analytical relationship for the fill factor was derived from the new series resistance formula.
Abstract: In this paper we present experimental data on ultrathin silicon wafer solar cells as well as the analytical description of their open-circuit voltage and fill factor. For this we use the analytical model of Fischer and Plagwitz to describe the rear surface recombination that we extend for very low wafer thicknesses. We observe an unexpected drop of the cell voltage at ∼40 μm thickness. This decrease cannot be described by the used models and is not reproduced via DESSIS simulations. From the new series resistance formula we can derive an analytical relationship for the fill factor. This allows us to perform a loss analysis of the cells and an optimization of the point contact pitch for different cell thicknesses. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

26 citations

Journal ArticleDOI
TL;DR: In this paper, series capacitors of the limited-voltage type in combination with auxiliary equipment are proposed to increase the permissible loadings of long highvoltage a-c transmission lines.
Abstract: This paper presents the results of an analytical and experimental investigation of the use of series capacitors to increase the permissible loadings of long high-voltage a-c transmission lines. Because of limitations imposed by synchronous stability and reactive kilovolt-ampere requirements, conventional lines, when extended to the higher voltages and greater lengths, cannot be loaded to values of power sufficiently high to develop maximum over-all economy. It is shown that, when suitably applied, series capacitors will make possible the desired optimum loadings and will very materially reduce transmission costs. The theoretical possibilities of using series capacitors to compensate the excessive inductive reactance of long lines have received consideration for many years. Practical series capacitors require protective equipment, but shunting of the capacitors in the earlier schemes resulted in a decrease instead of an increase in the transient-stability limits. The authors propose series capacitors of the limited-voltage type in combination with auxiliary equipment which not only protects the insulation but quickly restores the capacitors to the circuit after the faulted conductors are isolated, thus preventing a decrease in system power limit at the time of need. The application requirements of necessary apparatus are also briefly outlined. Results of analytical studies and miniature-system tests in connection with a typical application of series capacitors to one of the major lines of a typical transmission system are included. This work deals with relative transmission costs, transient stability, spontaneous hunting, and the sub-synchronous operation in the induction starting of machines. The conclusion is reached that the proposed series-capacitor scheme appears practicable for long transmission lines.

26 citations

Patent
Dominique A. Petit1
18 Sep 1996
TL;DR: In this paper, the trimming resistors are connected in parallel to the main resistor via a switch, typically a pass-gate NFET device, and serially connected there with the switch enabled via a control line coupled to a binary storage cell.
Abstract: A resistor structure which resistance value is electrically adjusted after fabrication by a tester during the test operation so that its equivalent resistance closely approximates a desired nominal value. The resistor structure includes a main resistor and a number of trimming resistors connected in parallel. Each trimming resistor can be connected in parallel to the main resistor independently of one another via a switch, typically a pass-gate NFET device, and serially connected therewith. The switch is enabled via a control line coupled to a binary storage cell. It includes a programmable fuse that can be electrically blown by the tester. Because the resistance value of the main resistor and trimming resistors changes as a result of fabrication process variations, the trimming resistors are designed so that no matter what the equivalent resistance value of the main resistor is, there exists an appropriate combination of trimming resistors to achieve the desired nominal value. This resistor structure is well suited for IC terminator chips.

25 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206