Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Application of double-layer capacitor technology to static condensers for distribution system voltage control

Abstract: Static condensers may be utilized to mitigate many power quality problems in distribution systems. The condenser requires some type of energy storage such as a battery, a superconducting magnetic system, or a capacitor. The use of double-layer capacitors in static condensers is examined in this paper. These capacitors are characterized by high values of capacitance and equivalent parallel resistance and low values of equivalent series resistance. Double-layer capacitor technology is discussed and equivalent circuit models are presented. Test results for a 2.3 V, 470 F double-layer capacitor are presented to demonstrate how operation in a static condenser may affect capacitor performance. Design considerations for the use of this technology in a static condenser are discussed. Operation of a static condenser employing double-layer capacitors is illustrated using EMTP.

A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

Abstract: Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the DC characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed.

A proposed simulation technique to study the series resistance and related millimeter-wave properties of Ka-band Si IMPATTs from the electric field snapshots

Abstract: A large-signal model and a simulation technique based on non-sinusoidal voltage excitation are used to obtain the electric field snapshots from which the series resistance and related high-frequency properties of a 35 GHz Silicon Single-Drift Region (SDR) Impact Avalanche Transit Time (IMPATT) device have been estimated for different bias current densities. A novel method is proposed in this paper to determine the parasitic series resistance of a millimeter-wave IMPATT device from large-signal electric field snapshots at different phase angles of a full cycle of steady-state oscillation. The method is based on the depletion width modulation of the device under a large-signal condition. The series resistance of the device is also obtained from the large-signal admittance characteristics at threshold frequency. The values of series resistance of a 35 GHz SDR IMPATT diode obtained from the proposed method and the large-signal admittance method are compared with experimentally reported values. The results show that the proposed method provides better and closer agreement with the experimental value.

On SPICE Simulation of Voltage-Dependent Capacitors

Abstract: The capacitance of voltage-dependent capacitors can be defined in two ways: as “total capacitance” Ct ( v ) = Q / v and “local capacitance” Cd ( v ) = dQ / dv . The former is applicable to cases when the capacitance is measured by a charge injection or when the total capacitance is derived from the properties of the dielectric material. The “local capacitance” is applicable in cases when the capacitor is measured by a small test signal for various bias voltages. Based on the capacitance definitions, SPICE compatible models are implemented either by applying local and integral operators or by a nonlinear reflection of a linear capacitor. These are demonstrated by PSPICE behavioral-dependent sources. When properly emulated, the Ct and Cd models are applicable for simulating both small and large signals across the nonlinear capacitor. It is further brought up that both models suffer from convergence problems that can be partially alleviated by slowly increasing the level of the excitation signal and by reducing the maximum step time.

A tandem photovoltaic cell using a thin-film polymer electrolyte

Abstract: A tandem photovoltaic cell has been fabricated using a thin‐film plastic electrolyte to connect in optical and electrical series an n‐type CdS thin‐film and a p‐type CdTe single crystal. The electrolyte was a thin film of poly(ethylene oxide) with a polysulfide redox couple. An open circuit voltage of 625 mV and a short‐circuit current of 35 μA/cm2 were obtained under illumination of 100 mW/cm2 with a xenon lamp. The cell output in the present configuration is limited by the series resistance and insufficient band bending in the semiconductor electrodes due to unfavorable resistance matching of the components.