Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Polyphase filter and receiver using the same

Abstract: A polyphase filter having capacitors thereof composed with MIS capacitors and allowing improved characteristic is provided. The whole body of the polyphase filter 17 is fabricated into an IC. The resistors R11 to R45 individually combined with the capacitors C11 to C45 to form serial connection circuits, every four serial connection circuits individually form the bridge circuits 171 to 175, and the bridge circuits 171 to 175 are connected in a cascade manner. The capacitors C11 to C45 are constituted by the MIS capacitors, where the MIS capacitors are fabricated into an IC so that the capacitors Cs, Cs parasitic to the MIS capacitors are connected to the input sides of the resistors R11 to R45.

Measurement of concentrator solar cell series resistance by flash testing

Abstract: A simple technique for the measurement of series resistance of concentrator solar (photovoltaic) cells is described. This technique makes use of the fact that the ’’short circuit’’ current of a solar cell as a function of light intensity will begin to saturate at an intensity determined by the series resistance of the cell and circuit. In this region the series resistance of the cell can easily be found from a measurement which is relatively independent of illumination intensity and spectrum. Experimental data are presented that verify this result.

Lateral transport in silicon solar cells

Abstract: We investigate lateral charge carrier transport in crystalline silicon solar cells. Under typical operation illumination of high-efficiency solar cells, a significant population of electrons and holes exist in the silicon wafer, leading to a non-negligible sheet conductance for both carrier types. To investigate the contribution of these sheet conductances to lateral transport in solar cells, we develop a model that calculates the effective series resistance of two sheet resistances coupled via a contact resistance. In solar cells, the upper sheet resistance describes the highly conductive region like a diffusion or a transparent conductive oxide, whereas the lower sheet resistance describes the silicon absorber. We find that the coupling contact resistance needs to be low to benefit from the lateral current flow in the silicon absorber. We show experimentally for silicon heterojunction solar cells that the silicon absorber supports lateral minority charge carrier transport for well-passivated devices. Another finding is that there is no principle advantage for coupling of the two sheet resistances for rear-junction or front-junction solar cells, as the p n-junction (for front-junction solar cells) does not prevent coupling. We suggest that for n-type silicon heterojunction solar cells, the observed advantage of the rear-junction over the front-junction architecture is due to practically lower contact resistance and higher mobility of electrons vs holes. We also confirm experimentally the importance of a low contact resistivity between the highly conductive region and the silicon absorber for effective coupling and present an innovative technique to extract contact resistance from comparing Suns- V OC and current–voltage measurements.

GaN based transistors for high temperature applications

Abstract: We review theoretical and experimental results for GaN-based field effect transistors (FET) and discuss their potential for high temperature applications. We demonstrate that a decrease in ionized impurity scattering with an increase in temperature makes AlGaN-GaN DC-HFET to be superior candidates for high temperature applications. In these devices, a large sheet carrier concentration in the device channel allows us to obtain a relatively low parasitic series resistance and to achieve superior dc and ac performance (with the cutoff frequency times gate length product of 18.3 GHz × μm demonstrated recently by our group at room temperature).

Closed-form expressions for the series impedance parameters of on-chip interconnects on multilayer silicon substrates

Abstract: This paper presents accurate closed-form expressions for the frequency-dependent series impedance parameters of on-chip interconnects over general multilayer conductive silicon substrates. The closed-form expressions are obtained from a generalized complex image approach combined with a surface impedance formulation that takes into account the effects of the distributed eddy currents in the multilayer conductive substrate. Results for single and coupled microstrips on multilayer conductive substrates are shown over a broadband frequency range of 20 GHz and compared with full-wave electromagnetic solutions. It is demonstrated that a thin, heavily-doped channel-stop layer may contribute significantly to the series resistance at higher frequencies. The new approach is further validated for a coplanar waveguide interconnect by comparison with measurement data.