Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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TL;DR: In this paper, the parameters affecting the capacitance measurement of compressed gas capacitors which are used as highvoltage standards are investigated, and a method is given to distinguish between capacitors with high and low voltage dependence of capacitance, without applying high voltage to them.
Abstract: The parameters affecting the capacitance measurement of compressed gas capacitors which are used as high-voltage standards are investigated. The temperature coefficient of compressed gas capacitors in the range of 2 to 3 · 10−5 K−1, as well as inevitable ambient temperature changes and gradients within high-voltage halls, were found to be mainly responsible for the limitation in the accuracy of precise capacitance measurements. A method is given to distinguish between capacitors with high- and low- voltage dependence of capacitance, without applying high voltage to them. The voltage dependence of a commercially available 120-kV, 100-pF capacitor could be considerably reduced by renewing and readjusting its electrode system. The natural frequencies of the mechanical electrode system of capacitors with rated voltages between 100 and 800 kV were found to be between 38 and 8 Hz, respectively.
24 citations
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TL;DR: In this paper, a measurement method for the extraction of the source and drain series resistance of drain engineered MOSFETs from their low frequency ac characteristics as a function of gate and drain bias using only one single MOS-FET was presented.
Abstract: A new measurement method is explained for the extraction of the source and drain series resistance of drain engineered MOSFETs from their low frequency ac characteristics as a function of gate and drain bias using only one single MOSFET. Experimental results indicate, the effect of drain voltage dependent series resistance is relevant both in the ohmic and in the saturation region of the MOSFET. In addition the new measurement method is extended in such a way that it can be used to measure the series resistance as a function of gate bias only at low drain bias. Comparison of this single transistor measurement technique with other methods, needing a set of identical transistors with different channel lengths, shows that our method gives equal results. Finally attention is also given to the modeling of the series resistance in the ohmic and saturation region. For both regions simple, accurate compact model expressions have been derived.
24 citations
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TL;DR: In this paper, the fabrication and characterization of nontoxic heterojunction of ZnO/CuO was reported, where the films were characterized through X-ray diffraction, UV spectroscopy and field emission scanning electron microscope (FESEM).
24 citations
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TL;DR: The theory for the 2-D numerical analysis of acoustic wave generation from finite length leaky surface acoustic wave (LSAW) transducer structures is presented and the agreement between theory and experiment is excellent.
Abstract: The theory for the 2-D numerical analysis of acoustic wave generation from finite length leaky surface acoustic wave (LSAW) transducer structures is presented. The mass loading of the electrodes is incorporated through the use of the finite element method (FEM). The substrate is modeled using both analytical and numerical means. The advantages of this simulation are twofold. First, it is capable of extracting the individual bulk wave conductances from the overall conductance of a given device. At large distances from the transducer, the angular distribution of power radiated relative to the substrate surface can then be calculated for each of the three possible bulk wave polarizations. The second advantage of the simulation is that the effect of finite electrode resistance is included through the use of a series equivalent resistance for each electrode in the structure. Once the resistance for each electrode in the structure has been determined, the overall effect on the device admittance is modeled by applying a constrained minimization process to the electrical boundary conditions of the transducer. To conclude the paper, the simulation will be compared against the experimental admittance of a 37-finger uniform transducer with a metallization ratio of 0.5 on 42/spl deg/ LiTaO/sub 3/. The agreement between theory and experiment is excellent.
24 citations
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TL;DR: In this paper, two critical conditions of the output capacitor ESR for mode shifting and normal operation of the VM hysteretic controlled buck converter are derived, verified by circuit simulations, illustrate that the larger ESR is necessary for the converter operating normally; otherwise, the converter operates abnormally.
Abstract: Different types of capacitors have different parameters, e.g. equivalent series resistance (ESR) and capacitance. In switching DC-DC converters with voltage-mode (VM) hysteretic control, the output capacitor ESR has a significant effect on dynamic performance. In this reported work, two critical conditions of the output capacitor ESR for mode shifting and normal operation of the VM hysteretic controlled buck converter are derived. These results, verified by circuit simulations, illustrate that the larger output capacitor ESR is necessary for the converter operating normally; otherwise, the converter operates abnormally.
24 citations