Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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TL;DR: In this article, the authors presented a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field, and the influence of applied magnetic fields on the diode current density, Jd, and both electric power-photovoltage and photocurrent photovoltaic properties were discussed.
Abstract: In this paper, we present a theoretical 3D study of a polycrystalline silicon solar cell in frequency modulation under polychromatic illumination and applied magnetic field. The influence of the applied magnetic field on the diode current density, Jd, and both electric power–photovoltage and photocurrent–photovoltage characteristics are discussed. The Nyquist diagram permitted us to determine the electrical parameters such as the series resistance Rs and parallel equivalent resistance Rp of a polycrystalline silicon solar cell. The Bode diagram is then used to calculate the cut-off frequency, capacitance C and inductance L. It has been shown that, under a magnetic field, the solar cell behavior is like that of a low-pass filter.
24 citations
TL;DR: In this article, an experimental study for the direct determination of broad range of performance indicating parameters of polycrystalline silicon solar cell by using direct current (DC) and alternating current (AC) characterization techniques is reported.
24 citations
24 Apr 2014
TL;DR: In this paper, an analytic equation that can be used to evaluate the effects of stray inductance on the equivalent resistance of hard-switched switched capacitor converters is presented. But the authors did not consider the effect of stray induction on SC converter performance.
Abstract: Switched capacitor (SC) converters are becoming quite popular for use in DC-DC power conversion. The concept of equivalent resistance in SC converters is frequently used to determine the conduction losses due to the load current. A variety of methodologies have been presented to predict the equivalent resistance in hard-switched SC converters. These works, however, did not consider the effect of stray inductance on equivalent resistance. Current power converter design practices favor higher switching frequencies, moving hard-switched SC converters into operating areas in which stray inductance affects converter performance. This paper presents an analytic equation that can be used to evaluate the effects of stray inductance on the equivalent resistance of switched capacitor converters. The concepts proposed here are verified by both digital simulation and a prototype converter. The equations presented can be used to evaluate the effects of stray inductance on SC converter performance, thereby helping designers set a maximum operating frequency to limit its effect.
24 citations
TL;DR: In this article, the authors present computer simulations and experimental studies that reveal mechanisms limiting the time response and design rules to achieve short response time of higher-operating-temperature (HOT, T ∼200 K to 300 K) fast longcutoff-wavelength infrared (LWIR) HgCdTe photodetectors.
Abstract: We report on the time response of higher-operating-temperature (HOT, T ∼200 K to 300 K) fast long-cutoff-wavelength infrared (LWIR) HgCdTe photodetectors. For a long time, photoconductive and photoelectromagnetic devices operating near room temperature have been used as fast (sub-nanosecond) photodetectors. Unfortunately, such devices suffer from relatively low detectivity. Recent efforts have focused on heterojunction photodiodes that offer both fast response and high performance. This paper presents computer simulations and experimental studies that reveal mechanisms limiting the time response and design rules to achieve short response time of HOT LWIR photodiodes operating at both zero and reverse bias. Complex time response curves with fast and slow components have been observed. The latter has been found to be mainly determined by the ambipolar diffusion of photogenerated charge carriers and by the diffusion capacitance combined with the built-in or external series resistance. The limitations are especially pronounced in zero-biased photodiodes characterized by large diffusion capacitance, where series resistance of only 1 Ω significantly reduces the response speed of devices with 100 μm × 100 μm photosensitive area.
24 citations
TL;DR: In this article, the authors investigated the origins of an increase in the series resistance of PERC multicrystalline silicon solar cells due to post-firing thermal processes and demonstrated that this behavior is in good agreement with the expected interactions of hydrogen with dopants and electric fields within silicon wafers, and speculated that at least part of the observed increase in resistance is due to the motion of hydrogen within the cell itself.
24 citations