Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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TL;DR: In this article, the synchronous step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at the onset of lasing were observed for the first time.
Abstract: Accurate forward electrical characteristics of multiquantum-well (MQW) lasers have been measured using ac admittance measurements together with dc I-V plot. The synchronous step offsets of apparent conductance, apparent capacitance, junction voltage, series resistance, and ideality factor at the onset of lasing were observed for the first time. With this effect, the lasing threshold can be deduced immediately by the LCR Meter. It is also found that the junction voltage jumps abruptly to a saturated value at the onset of lasing, and the starting and end points of jumping exactly correspond to the maximum of the second derivative of lasing power with respect to current and the kink point of the first derivative, respectively. All of the phenomena may help to verify and improve existing semiconductor laser models. In addition, negative capacitance effect in LDs was observed
23 citations
TL;DR: In this article, a silicon point-contact channel single-electron transistor (SET) with an ultrasmall dot was fabricated and shown to have a peak conductance as large as 8.8 μS and singleelectron addition energy of 128 meV.
Abstract: We have fabricated a silicon point-contact channel single-electron transistor (SET) with an ultrasmall dot. By narrowing only the point-contact region and suppressing the parasitic series resistance, a peak conductance as large as 8.8 μS and single-electron addition energy as large as 128 meV are simultaneously obtained. A current staircase due to the large quantum level spacing is clearly observed at low temperatures. From numerical calculations, it is found that the staircase feature due to discrete quantum levels stands out even at room temperature in future silicon SETs with an ultrasmall dot.
23 citations
TL;DR: In this article, an analytic I?V equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately.
Abstract: An analytic current?voltage (I?V) equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately. From the analysis on the overlap region, the series resistance of OTFTs is found to be a function of the gate voltage due to the sheet resistance change of the accumulation layer. Using the derived I?V equation, the characteristics of both the channel and the overlap region are well-explained. The I?V equation is verified with fabricated top-contact OTFTs and metal?insulator?semiconductor (MIS) capacitors, and the predicted I?V characteristics from the equation agree well with the measurements. Also, the ratio of the series resistance to the total resistance of the device is up to 60% which shows significant influence of the series resistance on top-contact OTFT performance.
23 citations
TL;DR: In this paper, a frequency dispersion of the equivalent resistance of a trapezoid-coupling pattern was shown to break the single resonance limitation induced by the non-dispersive feature of a simple patterned high impedance surface (HIS) absorber.
Abstract: Resonances of the high impedance surface (HIS) absorber with periodic trapezoid-coupling pattern were studied. The theoretical, numerical, and experimental study showed that a frequency dispersion of the equivalent resistance could break the single resonance limitation. The limitation is induced by the non-dispersive feature of the equivalent resistance in simple patterned HIS absorber. Therefore, multi-resonances originated from the trapezoid-coupling pattern effectively expanded the absorption bandwidth. The proposed absorber had a thickness reduced by 41% and a −15 dB absorption bandwidth broadened by 50% compared with Salisbury screen.
23 citations
TL;DR: The occurrence of the hypersensitivity phenomena after alpha irradiation is observed by observing a drop in the series resistance, crucial in the study of DNA damage and repair mechanisms, and may suggest the exciting possibility of utilizing Al/DNA/Al Schottky diodes as potentially sensitive humidity sensors.
Abstract: Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective sensors to be developed and fabricated. In this work, we examined the effect of different humidity conditions on the capacitive and resistive response of Aluminum (Al)/DNA/Al Schottky barrier structure when bombarded by time-dependent dosages of alpha particles. Based on current-voltage profiles, which demonstrated rectifying behaviours, Schottky diode parameters such as ideality factor, barrier height and series resistance was calculated. Results observed generally pointed towards a decrease in the resistance value from the pristine to the radiated structures. It was also demonstrated that under the effect of humidity, the capacitance of the DNA thin film increased from 0.05894 to 92.736 nF, with rising relative humidity level. We also observed the occurrence of the hypersensitivity phenomena after alpha irradiation between 2 to 4 min by observing a drop in the series resistance, crucial in the study of DNA damage and repair mechanisms. These observations may also suggest the exciting possibility of utilizing Al/DNA/Al Schottky diodes as potentially sensitive humidity sensors.
23 citations