Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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TL;DR: In this paper, a capacitance based on an electrochemically etched macroporous silicon substrate and a layered dielectric (ONO) is presented, which can realize values of specific capacitance which so far could only be reached by electrolytic capacitors.
127 citations
TL;DR: In this paper, a high-reflectivity coated 11.5-μm wide and 4-mm-long epilayer-down bonded QCL using a diamond submount shows a considerable improved cw operation with an output power of 143mW and a threshold current density of 1.51kA∕cm2 at 298K.
Abstract: Temperature dependent characteristics of λ∼3.8μm quantum-cascade lasers (QCLs) operating up to 318K in continuous-wave (cw) mode are reported. A high-reflectivity coated 11.5-μm-wide and 4-mm-long epilayer-down bonded QCL using a diamond submount shows a considerable improved cw operation with an output power of 143mW and a threshold current density of 1.51kA∕cm2 at 298K. The temperature dependence on optical and electrical performances of the QCLs with respect to the output power, slope efficiency, threshold current/voltage, turn-on voltage, differential series resistance, and emission wavelength are investigated systematically above liquid nitrogen temperature.
127 citations
TL;DR: In this article, the authors describe the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top pGaN surface which uses Ni nano-mask and wet etching.
Abstract: This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45% higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20%. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.
124 citations
Patent•
21 Dec 2001TL;DR: A p-n tunnel junction between a p-type semiconductor layer and a n-type layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure.
Abstract: A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure The p-n tunnel junction reduces the number of p-type semiconductor layers in the nitride based semiconductor VCSEL or LED structure which reduces the distributed loss, reduces the threshold current densities, reduces the overall series resistance and improves the structural quality of the laser by allowing higher growth temperatures
124 citations
TL;DR: In this article, the effect of series resistance on capacitance and frequency characteristics of Zn/p-Si Schottky diodes with high resistivity has been given by admittance spectroscopy.
122 citations