Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Fast series resistance imaging for silicon solar cells using electroluminescence

Abstract: We introduce a fast and easy to apply method for determining the local series resistance of standard silicon solar cells. For this method only two electroluminescence images taken at different voltages are needed. From these two images, the local voltage and the local current density through the device can be calculated. Knowing these parameters for each pixel yields the local series resistance. By calculating the cell's dark saturation current from the lower voltage image, the method also works with multicrystalline material. We show images, acquired in only 300 ms and compare them with other luminescence based series resistance images. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

High-frequency small-signal model of ferrite core inductors

Abstract: A circuit model of ferrite core inductors is presented. The behavior of the model parameters versus frequency is considered. The total power loss in inductors consisting of the winding resistance loss and the core loss, is modeled by a frequency-dependent equivalent series resistance. The total inductance given by the sum of the main inductance and the leakage inductance is obtained as a function of frequency. In order to study the core equivalent resistance and main inductance versus frequency, the magnetic field distribution in the core is derived from Maxwell's equations for a long solenoid. The complex permeability and permittivity of the ferrite core are introduced in the electromagnetic field equations. Experimental results are also given.

Photovoltaic properties of the organic-inorganic photodiode based on polymer and fullerene blend for optical sensors

Abstract: Inorganic–organic photodiode was fabricated with blend single layer as well as sandwich structure, using p-Si and poly(2-methoxy-5-(20-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV):fullerene-C60 blend. Electronic parameters such as barrier height, diode ideality factor, series resistance and shunt resistance were determined from the I–V characteristic in the dark of p-Si/C60:MEH-PPV diode and were found to be 0.75 eV, 1.36, 6.26 × 105 Ω, 1.40 × 1010 Ω, respectively. The interface state density and time constant of p-Si/C60:MEH-PPV diode were determined to be 2.55 × 1011 eV−1 cm−2 and 1.81 × 10−6 s, respectively. The photoconductivity sensitivity and responsivity values of the diode were found to be 8.16 × 10−6 S m/W and 1.63 × 10−2 A/W, respectively. The p-Si/C60:MEH-PPV diode indicates a photovoltaic behaviour with a maximum open circuit voltage Voc of 130 mV and short-circuit current Isc of 24.5 nA. The photocurrent of the device was found to be 2.94 μA and photoconductivity mechanism of the p-Si/C60:MEH-PPV diode indicates the existence of continuous distribution of trap centres. It is evaluated that the p-Si/C60:MEH-PPV photovoltaic device can be operated as a heterojunction photodiode.