Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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TL;DR: In this article, the authors report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm.
Abstract: We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field‐effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance.
106 citations
TL;DR: A simple method for obtaining the series resistance of solar cells is described and Universal current-voltage characteristics of the solar cells are given to illustrate the effects of series and shunt resistance.
Abstract: Series resistance is an important parameter in solar cell design and fabrication. Methods reported in literature for its determination are not suitable for routine use. We describe a simple method for obtaining the series resistance. Universal current-voltage characteristics of the solar cells are also given to illustrate the effects of series and shunt resistance. We also offer an explanation for the often observed drop in efficiency when small area cells are scaled upward. Cells less than 0.25 cm2 represent the intrinsic potential of any given structure or diode but do not reflect series resistance effects that must be eliminated with larger area cells and the practical problems of griding to allow for current collection.
105 citations
TL;DR: In this paper, the authors focus on single-diode photovoltaic cell models and conduct simulation studies to assess temperature dependence, solar radiation change, diode ideality factor and series resistance influence.
Abstract: This paper focuses on single-diode photovoltaic cell models. Comprehensive simulation studies are carried out in order to adequately assess temperature dependence, solar radiation change, diode ideality factor and series resistance influence. A comparison between an ideal model single-diode solar cell and a model of single-diode solar cell with a series resistance is also presented. Finally, conclusions are duly drawn.
105 citations
TL;DR: Screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates are presented and the design process for minimization of inductor series resistance that enables their use in power electronics is reported on.
Abstract: Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.
104 citations
TL;DR: In this article, the effect of uncertainties in device parameters on extracted interface state density was determined using experimental results of thin oxides (1.4 nm and 2.0 nm) and modeling was used to indicate the effects of various device parameters.
Abstract: A systematic study of the uncertainties, sensitivity and limitations of the conductance technique for extracting the interface state density of tunneling dielectrics is presented. The methodology required to extract device parameters and interface state density from conductance and capacitance data is reviewed and analyzed. The effect of uncertainties in device parameters on extracted interface state density was determined using experimental results of thin oxides (1.4 nm and 2.0 nm). Modeling was used to indicate the effects of various device parameters on the sensitivity of conductance to changes in interface state density. The effect of uncertainties in insulator capacitance of equivalently thin dielectrics on uncertainties in extracted interface state density is minimal. The effect of uncertainties in series resistance increases with increasing bias towards accumulation. An increase in the series resistance of the device causes reduced sensitivity to changes in interface state density especially for interface states located nearer the majority band edge; increasing tunneling current causes increased uncertainties and reduced sensitivity to changes in interface state density especially for interface states nearer midgap.
103 citations