Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Bipolar Ripple Cancellation Method to Achieve Single-Stage Electrolytic-Capacitor-Less High-Power LED Driver

Abstract: Conventional topologies for high-power LED drivers with high power factors (PFs) require large capacitances to limit the low frequency (100 or 120 Hz) LED current ripples. Electrolytic capacitors are commonly used because they are the only capacitors with sufficient energy density to accommodate high-power applications. However, the short life span of electrolytic capacitors significantly reduces the life span of the entire LED lighting fixture, which is undesirable. This paper proposes a bipolar (ac) ripple cancellation method with two different full-bridge power structures to cancel the low-frequency ac ripple in the LED current and minimize the output capacitance requirement, enabling the use of long-life film capacitors. Compared with the existing technologies, the proposed circuit achieves zero double-line-frequency current ripple through LED lamps and achieves a high PF and high efficiency. A 100-W (150 V/0.7 A) LED driver prototype was built which demonstrates that the proposed method can achieve the same double-line-frequency LED current ripple with only 44- $\mu \text{F}$ film capacitors, compared with the 4700- $\mu \text{F}$ electrolytic capacitors required in the conventional single-stage LED drivers. Meanwhile, the proposed prototype has achieved a peak power efficiency of 92.5%, benefiting from active clamp technology.

Process for the production of electrolyte capacitors of high nominal voltage

Abstract: The invention relates to a process for the production of electrolyte capacitors having a low equivalent series resistance and low residual current for high nominal voltages, electrolyte capacitors produced by this process and the use of such electrolyte capacitors.

Distributed series resistance effects in solar cells

Abstract: A mathematical treatment is presented of the effects of one-dimensional distributed series resistance in solar cells. A general perturbation theory is developed, including consistently the induced spatial variation of diode current density and leading to a first-order equivalent lumped resistance of one third the total sheet resistance. For the case of diode characteristics of exponential type and distributed resistance of arbitrary size, unified numerical results are presented for both illuminated and dark characteristics. At high forward dark currents, the distributed series resistance is shown to cause an effective doubling of the "diode quality factor."

Method of manufacturing integrated circuit containing bipolar and complementary MOS transistors on a common substrate

Abstract: An integrated circuit containing bipolar and complementary MOS transistors wherein the emitter terminals of the bipolar transistors as well as the gate electrodes of the MOS transistors are composed of the same material, consisting of a metal silicide or of a double layer containing a metal silicide and a polysilicon layer. The emitter base terminals are arranged in self-adjusting fashion relative to one another and the collector is formed as a buried zone. The collector terminal is annularly disposed about the transistor. As a result of the alignment in dependent spacing between the emitter and the base contact, the base series resistance is kept low and a reduction of the space requirement is achieved. The doping of the bipolar emitter and of the n-channel source/drain occurs independently. The method for the manufacture of the integrated circuit employs an n-doped gate material of the MOS transistors as a diffusion source and as a terminal for the emitters of the bipolar transistors and does not require an additional photolithography step. Because of the annular, deep collector region, a reduction of the collector series resistance and an increased latch-up hardness are achieved. The integrated semiconductor circuit is employed in VLSI circuits having high switching speeds.