Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Mobility Extraction and Quantum Capacitance Impact in High Performance Graphene Field-effect Transistor Devices

Abstract: The field-effect mobility of graphene devices is discussed. We argue that the graphene ballistic mean free path can only be extracted by taking into account both, the electrical characteristics and the channel length dependent mobility. In doing so we find a ballistic mean free path of 300nm at room-temperature for a carrier concentration of ~1e12/cm2 and that a substantial series resistance of around 300ohmum has to be taken into account. Furthermore, we demonstrate first quantum capacitance measurements on single-layer graphene devices.

Hall measurements and contact resistance in doped gan/algan heterostructures

Abstract: We report on doped AlGaN/GaN heterostructures with very high values of the sheet electron concentration (up to approximately 1.5×1013 cm−2), high Hall mobility (on the order of 800 cm2/Vs) and high sheet concentration‐mobility product (up to approximately 1016 1/Vs). Transmission line model measurements of the contact resistance to these layers show that series resistance is considerably reduced by doping the GaN channel. A contact resistance of 2.3 Ω mm is demonstrated for the structure with the highest sheet carrier concentration, which corresponds to ≊8.8×10−5 Ω cm2 specific contact resistance.

Monolithic narrow-band filter using ultrahigh-Q tunable active inductors

Abstract: A tunable active inductor is presented where the novel topology enables both the inductance and series resistance to be varied. With a discrete MMIC realization of this active inductor, Q-factors in excess of 15000 have been measured over a wide range of inductance values. Applications for these active inductors include high-performance narrow-band filters, voltage controlled oscillators, and analog phase shifters. Analytical equations for the novel active inductor and a 3-resonator filter are given. The measured performance for a monolithic 2 GHz filter achieves a mean insertion loss of 0.9 dB, passband ripple of /spl plusmn/0.7 dB, with a 3 dB bandwidth of 70 MHz, and an excellent out-of-band rejection which exceeds 50 dB up to 18 GHz. >

Determining Components of Series Resistance from Measurements on a Finished Cell

Abstract: Detailed expressions are given for computing the components of series resistance for a cell with a common contact pattern of parallel, equally-spaced gridlines which are perpendicular to two or more busbars. Front busbars and gridlines, contact resistance, emitter sheet, substrate, back metal and back busbars are all considered. No detailed thickness profiles are needed for any feature, only basic lengths and separations along with four-point resistance measurements. Results are given for a two-bus 15 cm square multicrystalline silicon cell having an efficiency of 15.0%. The total series resistance is 1.04 Omega-cm2, dominated by the gridline contribution. The addition of a third busbar is calculated to result in an increase in FF of 0.018, corresponding to an increase of 0.36% in absolute efficiency. A method for providing a coarse map of pseudo contact resistance for a finished cell, using only a four-point probe, is also introduced