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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


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Journal ArticleDOI
TL;DR: In this article, a solid-state current pulse generator for in situ membrane resistance measurements by superimposed square current pulses in polymer electrolyte fuel cells was designed and built, and the choice of the measuring technique and of parameters of the instrumentation was based on a critical analysis of relevant electrochemical and physical processes.
Abstract: A solid-state current Pulse generator for in situ membrane resistance measurements by superimposed square current pulses in polymer electrolyte fuel cells was designed and built. The choice of the measuring technique and of parameters of the instrumentation was based on a critical analysis of the relevant electrochemical and physical processes. The inductance of the current pulse path is very low ({approx}5 nH), because the last stage of the generator is directly attached to the fuel cell. This low inductance -permits the generation of 5 A pulses with extremely fast (decay time {<=}5 ns) trailing edges (accompanied by a moderate ringing), which in turn makes it possible to measure the voltage transient induced by the current decay, with gigahertz resolution. The voltage transient is analyzed in a time window of 200 to 700 ns after the end of the pulse. By measurements in this time window, it is possible to separate accurately the ohmic series resistance of the cell (membrane resistance) from the other over potentials at the electrochemical interfaces. Because the pulse current path is independent of the dc loop, the resistance can be measured independently of the dc value, i.e., at open circuit and under high current density conditions.more » The instrument was tested, and the results were analyzed for accuracy. Resistances down to 2 m{Omega} can be measured with an error of <5%. The influence of the pulse length and pulse amplitude on the cell voltage response was also investigated. For cell resistances in the order of few milliohms, a current pulse amplitude of 5 A is the minimum requirement for accurate measurements.« less

76 citations

Patent
Terry I. Chappell1, Jerry M. Woodall1
23 Jun 1980
TL;DR: In this paper, a solar cell is disclosed with V-groove which are series connected, but electrically isolated, indirect bandgap solar cells which are responsive to different light frequencies on both sides of a semi-insulating optically transparent substrate.
Abstract: A solar cell is disclosed with V-grooves which are series connected, but electrically isolated, indirect bandgap solar cells which are responsive to different light frequencies on both sides of a semi-insulating optically transparent substrate. The device has a very high conversion efficiency of approximately 40% and high open-circuit voltage and low series resistance. An exemplary structure in accordance with this disclosure has a series of silicon V-groove cells on one side and another series of GaAlAs V-groove cells on the other side. The cells are of generally trapezoidal cross-section. The difference between the characteristics of the Si cell and the GaAlAs cell is matched by control of the number of V-grooves.

76 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the properties and performance of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits, and proposed a novel device structure where conductive alpha-IGZO regions work as the source and drain electrodes to the channel region of semiconductor alpha-IZO.
Abstract: This paper presents the following recent investigations of transparent amorphous-oxide semiconductors (TAOS) from materials to devices and circuits. 1) Composition of metals in TAOS are widely explored with the aim of seeking semiconductors suitable for the channel layers of thin-film transistors (TFTs) composing backplanes for flat-panel displays. It is found in combinatorial approaches to the materials exploration that indium-based ternary TAOS (In-X-O) and their TFTs show the properties and the performance as good as those of the most popular material of amorphous In-Ga-Zn-O (alpha-IGZO) when X = Zn or Ge. 2) Defects and impurities in TAOS are investigated by theoretical approaches. The first-principle calculation of the electron states reveals that charge-neutral oxygen vacancy or interstitial forms the density of states around mid-gap level and does not generate carriers directly, while hydrogen impurity raises the Fermi level beyond the conduction-band minimum and acts as a donor in TAOS. 3) Device structures of TAOS-TFTs are also investigated extensively for better performance and stability. It is found in channel-etch type TFTs with bottom-gate inverse-stagger structures that the TFT characteristics and stability are significantly improved by chemically removing the back-channel layer in a wet-etching process. Coplanar homojunction (CH) structure is proposed as a novel device structure where conductive alpha-IGZO regions work as the source and drain electrodes to the channel region of semiconductor alpha-IGZO. The CH TFTs show excellent characteristics and stability, with low series resistance without any difficulty in making good electrical contact between metals and TAOS. 4) Circuits using TAOS-TFTs are demonstrated. A ring oscillator composed of fifteen-stage inverters with a buffer circuit operates as designed by circuit simulation with a TFT model for hydrogenated amorphous Si TFTs. Pixel circuits composed of three TFTs and one transparent capacitor successfully drive organic light-emission diode cells without a planarization layer on a 2-in diagonal panel having 176 times144 times 3 pixels.

76 citations

Journal ArticleDOI
TL;DR: In this paper, an advanced series resistance model is developed to accurately predict source/drain (S/D) series resistance of complementary metal-oxide semiconductor (CMOS) in the nanometer regime.
Abstract: An advanced series resistance model is developed to accurately predict source/drain (S/D) series resistance of complementary metal-oxide semiconductor (CMOS) in the nanometer regime. The series resistance is modeled by division into four resistance components named SDE-to-gate overlap, S/D extension, deep S/D, and silicide-diffusion contact resistance, considering the nonnegligible doping-dependent potential relationship in MOS accumulation region due to scaled supply voltage, current behavior related to heavily doped ultra-shallow source/drain extension (SDE) junction, polysilicon gate depletion effects (PDE), lateral and vertical doping gradient effect of SDE junction, silicide-diffusion contact structure, and high-/spl kappa/ dielectric sidewall. The proposed model well characterizes unique features of nanometer-scale CMOS and is useful for analyzing the effect of source/drain parameters on CMOS device scaling and optimization.

76 citations

Journal ArticleDOI
TL;DR: A region of anomalous negative capacitance has been observed with forward bias in Se−Tl Schottky evaporated layer structures as mentioned in this paper, which is due to an inductive contribution to the impedance that is believed to arise from high level injection of minority electrons into the bulk selenium.
Abstract: A region of anomalous negative capacitance has been observed with forward bias in Se‐Tl Schottky evaporated layer structures. The effect, which is more prevalent in diodes with lower series resistance, is due to an inductive contribution to the impedance that is believed to arise from high‐level injection of minority electrons into the bulk selenium.

75 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206