Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Compact Model for Carbon Nanotube Field-Effect Transistors Including Nonidealities and Calibrated With Experimental Data Down to 9-nm Gate Length

Abstract: A semianalytical carbon nanotube field-effect transistor (CNFET) model based on the virtual-source model is presented, which includes series resistance, parasitic capacitance, and direct source-to-drain tunneling leakage. The model is calibrated with recent experimental data down to 9-nm gate length. Device performance of 22- to 7-nm technology nodes is analyzed. The results suggest that contact resistance is the key performance limiter for CNFETs; direct source-to-drain tunneling results in significant leakage due to low effective mass in carbon nanotubes and prevents further downscaling of the gate length. The design space that minimizes the gate delay in CNFETs subject to OFF-state leakage current (IOFF) constraints is explored. Through the optimization of the length of the gate, contact, and extension regions to balance the parasitic effects, the gate delay can be improved by more than 10% at 11- and 7-nm technology nodes compared with the conventional 0.7 × scaling rule, while the OFF-state leakage current remains below 0.5 μA/μm .

Process for the production of electrolyte capacitors

Abstract: The invention relates to a process for the production of electrolyte capacitors having a low equivalent series resistance and low residual current, electrolyte capacitors produced by this process and the use of such electrolyte capacitors.

DC bus electrolytic capacitor stress in adjustable- speed drives under input voltage unbalance and sag conditions

Abstract: This work analyzes the effects of the input voltage unbalance and sags on the DC bus electrolytic capacitors in adjustable-speed drives (ASDs) in order to predict their impact on expected capacitor lifetime. The key phenomenon that causes these problems is the transition of the rectifier stage from three-phase to single-phase operation. Since the ESR (equivalent series resistance) increases at low frequencies, the low-order harmonic current components (120 Hz, 240 Hz, etc.) contribute disproportionately to the capacitor power losses and temperature rise, resulting in reduced lifetime. Closed-form expressions are developed for predicting these effects including the impact of finite line impedance, finite bus capacitance, and varying load. The impact of inverter SVPWM (space vector pulse width modulation) switching on the capacitor loss is also included. Simulations and experimental tests are used to verify the accuracy and effectiveness of the closed-form analysis using a 5 hp ASD system.

Fabrication and electrical characteristics of polymer-based Schottky diode

Abstract: Metal/polymer Schottky diodes have been fabricated using spin-coated poly(3,4-ethylenedioxythiophene) (PEDT) doped with poly(styrenesulfonate) (PSS) as the p-type semiconductor and aluminum as the metal. The current–voltage and capacitance–voltage characteristics have been studied at room temperature. The breakdown voltage and rectification ratio of the Al/PEDT Schottky diode are about 5.5 V and 1.3×10 4 , respectively. A modified Norde function combined with conventional forward I – V method was used to extract the parameters including barrier height, rectification ratio, ideality factor, as well as the series resistance. This new method allows extraction of device characteristics from measured I – V curve that deviates from ideal I – V curve caused by series resistance.