Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, temperature dependence of the ideality factor and apparent barrier height of a polycrystalline diamond-based (Au/Ti)/undopeddiamond/doped-diamond metal-insulator• semiconductor Schottky diode was investigated in a temperature range 25-300°C.
Abstract: Temperature dependency and the series resistance effect on the electrical characteristics of a polycrystalline diamond‐based (Au/Ti)/undoped‐diamond/doped‐diamond metal‐insulator‐ semiconductor Schottky diode were investigated in a temperature range 25–300 °C. The current‐voltage (I‐V) characteristics of the device show rectifying behavior with the forward bias conduction limited by series resistance. Over the temperature range investigated, the I‐V data confirmed that the conduction mechanism of the diode is controlled by thermionic field emission. Modifying the thermionic field emission equation to include the series resistance model allows the ideality factor and barrier height of the Schottky diode to be calculated. Temperature dependence of the ideality factor and apparent barrier height was determined. By extrapolating the forward saturation current data, the evaluated ideality factor was observed to decrease from 2.4 to 1.1 while the apparent barrier increased linearly from 0.68 to 1.02 eV in the temperature range from 25 to 300 °C. The Richardson plot, ln(I0/T2) vs 103/T, has linear characteristics and indicates a true barrier height of 0.31 eV. Analysis of the temperature‐dependent series resistor measurements indicates a boron doping activation energy of 0.104 eV in the p diamond. The capacitance‐voltage‐frequency measurement confirmed that the measured capacitance varies with applied bias and frequency due to the presence of the Schottky barrier, impurity level, and high series resistance. Capacitance‐frequency measurement at zero bias indicated that the degrading capacitance at high frequency is primarily due to the high series resistance of the bulk polycrystalline diamond.
66 citations
TL;DR: In this paper, the authors present the temperature modelling in BSIM3v3 (Berkeley Short-Channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to C.
Abstract: This paper presents the temperature modelling in BSIM3v3 (Berkeley Short-channel IGFET Model version 3), and comparison with measured data for both n- and p-channel devices with a channel length down to a quarter of a micrometre from room temperature up to C. I - V, and are modelled with the temperature dependences of mobility, threshold voltage, saturation velocity and series resistance.
65 citations
TL;DR: Results verified by experimental circuit indicate that the ESR of output capacitor is a critical factor for COT-controlled buck converter, which can eliminate the unique pulse bursting phenomenon and shift operation mode from discontinuous Conduction mode to continuous conduction mode, as well as control stability.
Abstract: Equivalent series resistance (ESR) of output capacitor has a significant effect on the control performance of constant on-time (COT) controlled switching dc-dc converters. In this paper, a discrete-time model of COT-controlled buck converter, with variable sampling frequency, is established. Based upon which, the dynamical effects of the ESR of output capacitor on COT-controlled buck converter are revealed and analyzed. The time-domain numerical simulations of the exact switched state equations, the bifurcation diagrams, and maximal Lyapunov exponents of the discrete-time model are obtained. These results verified by experimental circuit indicate that the ESR of output capacitor is a critical factor for COT-controlled buck converter, which can eliminate the unique pulse bursting phenomenon and shift operation mode from discontinuous conduction mode to continuous conduction mode, as well as control stability.
65 citations
TL;DR: In this paper, the effect of parasitic resistances on silicon solar cell performance was discussed and the currentvoltage I − U characteristics of single crystalline silicon solar cells at different temperatures were measured in the dark.
65 citations
TL;DR: In this paper, positive-immittance convertors (p.i.c.s) with a purely reactive conversion ratio are used to simulate inductors in LCnetworks, which results in simulated inductors whose magnitudes are controlled by resistor networks.
Abstract: Positive-immittance convertors (p.i.c.s) with a purely reactive conversion ratio are used to simulate inductors in LCnetworks. This approach, in addition to all the advantages and disadvantages of multigyrator-capacitor networks, results in simulated inductors whose magnitudes are controlled by resistor networks. Consequently the capacitors directly involved in the simulation of the inductors may all be made equal to some convenient magnitude.
64 citations