Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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Patent•
15 Apr 2005
TL;DR: In this paper, a process for the production of electrolytic capacitors with low equivalent series resistance and low residual current, comprised of a solid electrolyte formed from conducting polymers and an outer layer containing conducting polymer and a binder, is described.
Abstract: Process for the production of electrolytic capacitors with low equivalent series resistance and low residual current, comprised of a solid electrolyte formed from conducting polymers and an outer layer containing conducting polymers and a binder, electrolytic capacitors produced by the process and their use.
64 citations
TL;DR: In this article, the authors evaluated the contact resistance of amorphous Si ( a- Si:H)/transparent conducting oxide (TCO) in terms of the contribution to the series resistance ( R s ) and fill factor ( FF ) in the Si heterojunction back-contact (HBC) solar cell.
64 citations
TL;DR: In this article, a comparative study of current-controlled hysteresis and pulsewidth modulation (PWM) techniques, and their influence upon power loss dissipation in a power-factor controller (PFC) output filtering capacitors is presented.
Abstract: This paper proposes a comparative study of current-controlled hysteresis and pulsewidth modulation (PWM) techniques, and their influence upon power loss dissipation in a power-factor controller (PFC) output filtering capacitors. First, theoretical calculation of low-frequency and high-frequency components of the capacitor current is presented in the two cases, as well as the total harmonic distortion of the source current. Second, we prove that the methods already used to determine the capacitor power losses are not accurate because of the capacitor model chosen. In fact, a new electric equivalent scheme of electrolytic capacitors is determined using genetic algorithms. This model, characterized by frequency-independent parameters, redraws with accuracy the capacitor behavior for large frequency and temperature ranges. Thereby, the new capacitor model is integrated into the converter, and then, software simulation is carried out to determine the power losses for both control techniques. Due to this model, the equivalent series resistance (ESR) increase at high frequencies due to the skin effect is taken into account. Finally, for hysteresis and PWM controls, we suggest a method to determine the value of the series resistance and the remaining time to failure, based on the measurement of the output ripple voltage at steady-state and transient-state converter working.
64 citations
TL;DR: In this article, the main factors influencing series resistance in p-on-n GaAs solar cells working at concentration levels of 1000 suns or higher are investigated, and a comparison between different front metal grid geometries is presented to show the strong influence that the front grid component of series resistance exerts on its global value.
Abstract: This paper deals with the determination of the main factors influencing series resistance in p-on-n GaAs solar cells working at concentration levels of 1000 suns or higher. Prior to this analysis, a comparison between different front metal grid geometries is presented to show the strong influence that the front grid component of series resistance exerts on its global value. Once the inverted square grid geometry is selected, a detailed analysis of the different components of series resistance is carried out. For this purpose, a multidimensional optimisation of the whole GaAs solar cell (antireflecting coatings, series resistance and semiconductor structure) has been used for the first time. In order to orient the manufacture of very high concentrator GaAs solar cells, recommendations on the threshold values of solar cell size, specific p- and n-contact resistances, thickness of the front metal grid and both doping level and thickness of the substrate are formulated. Several traditional ideas on the influence of these parameters are questioned. Copyright © 2000 John Wiley & Sons, Ltd.
64 citations
TL;DR: In this paper, the authors analyzed the components of parasitic series resistance in ULSI devices and showed that interfacial contact resistivities less than 10 −7 Ω cm 2 will be required for sub-100-nm devices in order to stay on the historical performance trend.
64 citations