Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

Abstract: In this work, we investigate the some main electrical and photocurrent properties of the Au/PVA(Co-doped)/n-Si diodes by using current–voltage (I–V) measurements at dark and various illumination intensity. Two types of diodes with and without polyvinyl alcohol (PVA) (Co-doped) polymeric interfacial layer were fabricated and measured at room temperature. Results show that the polymeric interfacial layers and series resistance (Rs) strongly affect the main electrical parameters of these structures. Also, metal/polymer/semiconductor (MPS) diode with PVA (Co-doped) interfacial organic layer is very sensitive to the light such that the current in reverse bias region increase by 103–104 times with the increasing illumination intensity. The open circuit voltage Voc and short-circuit current Isc values of this MPS diode under 100 mW/cm2 illumination intensity were found as 0.28 V and 19.3 μA, respectively.

Silicon solar cells using natural inversion layers found in thermally-oxidized p-silicon

Abstract: Inversion layer silicon solar cells are described which employ the natural inversion layer occurring at the surface of thermally-oxidized p-type silicon as one side of an induced n-p junction. Very shallow junctions are predicted theoretically with high electric fields in a direction to aid the collection of carriers generated by light of ultra-violet wavelengths. Collection efficiency calculations show the inversion layer cell to be less sensitive to lifetime and surface recombination velocity variations than diffused junction cells. Experimental 2 cm × 2 cm cells have been fabricated with the inversion layer contacted via a fine diffused n+ grid overlaid with a Ni-Cu-Au contact. The contact grid, specially designed to minimize the effect of the high inversion layer sheet resistance, produced a total shading of 16%. Illuminated I-V measurements confirm the induced junction to be near ideal, with an ideality factor A ⋍ 1.05 and a reverse saturation current approaching that predicted theoretically. Conversion efficiencies of ⋍ 8% have been obtained, with no special precautions being taken to reduce the series resistance of the back contact, or reflections at the front surface.

Nonaqueous electrical storage device

Abstract: An electrochemical capacitor is disclosed that features two, separated, high surface area carbon cloth electrodes (16, 18) sandwiched between two current collectors (12, 14) fabricated of a conductive polymer having a flow temperature greater than 130 degrees Celsius, with the perimeter of the electrochemical being sealed with a high temperature gasket (20) to form a single cell device. The gasket material is a thermoplastic stable at temperature greater than 100 degrees Celsius, preferably a polyester or a polyurethane, and having a reflow temperature above 130 degrees Celsius but below the softening temperature of the current collector material. The capacitor packaging has good mechanical integrity over a wide temperature range, contributes little to the device equivalent series resistance, and is designed to be easily manufactured by assembly line methods. The individual cells can be stacked in parallel or series configuration to reach the desired device voltage and capacitance.