Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

Method for preparing nanoporous carbon materials and electric double-layer capacitors using them

Abstract: Disclosed herein is the fabrication method of producing nanoporous carbon materials with pore sizes ranging from 2 nanometer to 20 nanometer which can be used as electrode materials for a supercapacitor and an electric double layer capacitors being a kind of supercapacitor. The invention also relates to electric double layer capacitors utilizing these carbon materials as electrodes. The carbon materials presented in the present invention possess regular pores with dimensions ranging in between 2 nm and 20 mm and exhibit high electrical conductivity. These carbon materials shows low equivalent series resistance (ESR) and thus exhibits high charge storage capacity at high charging/discharging current density.

Optimization of Interdigital Capacitors

Abstract: The variation of Q and capacitance slope for series- and shunt-connected interdigital capacitors is shown. A theory suitable for interactive design of capacitors is given.

A model for the electric field in lightly doped drain structures

Abstract: A semi-quantitative model for the lateral channel electric field in LDD MOSFET's has been developed. This model is derived from a quasi-two-dimensional analysis under the assumption of a uniform doping profile. A field reduction factor and voltage improvement, indicating the effectiveness of an LDD design in reducing the peak channel field, are used to compare LDD structures with, without, and with partial gate/drain overlap. Approximate equations have been derived that show the dependencies of the field reduction factor on bias conditions and process parameters. Plots showing the trade-off between, and the process-dependencies of, the field reduction factor/voltage improvement and the series resistance are presented for the three cases. Structures with gate-drain overlap are found to provide greater field reduction than those without the overlap for the same series resistance introduced. This should be considered when comparing the double-diffused and spacer LDD structures. It is shown that gate-drain offset can cause the rise of channel field and substrate current at large gate voltages. This offset is also found to be responsible for nonsaturation of drain current. The model has also been compared with two-dimensional simulation results.

A compact equivalent circuit for the dark current-voltage characteristics of nonideal solar cells

Abstract: This paper presents a compact electrical equivalent circuit which describes the dark current-voltage characteristics of nonideal p-n junction solar cells in a wide range of temperatures. The model clearly separates the voltage drop in the junction and bulk regions. It is based on the combination of two exponential mechanisms, shunt and series resistances and space-charge limited current. In order to increase the accuracy of the parameter extraction process, both ln(I-V) and its derivative plots are fitted simultaneously. From the temperature dependence of the extracted parameters, the conduction mechanisms governing the I-V characteristics can be obtained without assuming dominating terms. In addition, the extracted parameters can be related to other electrical magnitudes obtained from such independent measurements as capacitance-voltage measurements (diffusion potential) and illuminated current-voltage characteristics (series resistance and open-circuit voltage). To exemplify the application, a p+ a-SiC:...