Topic
Equivalent series resistance
About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.
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29 Mar 2006TL;DR: In this paper, a method and apparatus for use in an integrated circuit (60) or printed circuit board for reducing or minimizing interference is described, where two or more inductors are coupled together and configured such that current flows through the inductors (10A, 10B) in different directions, thus at least partially canceling magnetic fields.
Abstract: A method and apparatus is provided for use in an integrated circuit (60) or printed circuit board for reducing or minimizing interference. An inductance is formed using two or more inductors (10A, 10B) coupled together and configured such that current flows through the inductors (10A, 10B) in different directions, thus at least partially canceling magnetic fields. When designing a circuit, the configuration of the inductors(10A, 10B), as well as the relative positions of portions of the circuit, can be tweaked to provide optimal interference or noise control.
56 citations
TL;DR: In this paper, the ion sheath thickness was measured in an O2 discharge for 7-53 Pa pressure and 50-800 W rf power (13.56 MHz) and it was concluded that the discharge can be described as a capacitance with both a parallel and series resistance, the series element being the more important one.
Abstract: rf impedance, dc self‐bias, and ion sheath (dark space) thicknesses are measured in an O2 discharge for 7–53 Pa pressure and 50–800 W rf power (13.56 MHz). Special attention is paid to corrections for reactor stray impedances. It is concluded that the discharge can be described as a capacitance (the ion sheath) with both a parallel and a series resistance, the series element being the more important one. Good agreement is found between optical and electrical measurements of the ion sheath thickness. Evidence is presented that the dc potential difference between plasma and ground and rf electrode can be estimated with reasonable accuracy from the dc self‐bias and the optical dark space thicknesses. Positive ion acceleration in the ion sheath and electron‐neutral collisions in the bulk of the plasma glow account for only part of the total rf power transfer. It is suggested that significant dissipation takes place near the glow‐sheath boundary, although a quantitative description cannot be given yet.
55 citations
10 Dec 2002
TL;DR: In this paper, a physics-based approach is used to develop an improved impedance model that is interpreted both in pure Spice circuit models and in math functions, which can be used for modeling aluminum electrolytic capacitors.
Abstract: Impedance modeling of aluminum electrolytic capacitors presents a challenge to design engineers, due to the complex nature of the capacitor construction Unlike an electrostatic capacitor, an electrolytic capacitor behaves like a lossy coaxial distributed RC circuit element whose series and distributed resistances are strong functions of temperature and frequency This behavior gives rise to values of capacitance, ESR (effective series resistance), and impedance that vary by several orders of magnitude over the typical frequency and temperature range of power inverter applications Existing public-domain Spice models do not accurately account for this behavior In this paper, a physics-based approach is used to develop an improved impedance model that is interpreted both in pure Spice circuit models and in math functions
55 citations
09 Oct 2009
TL;DR: A quadratic differential and integration technique for the design of buck converters with small equivalent series resistance (ESR) of the output capacitor achieves a fast transient response with small load transient voltage variation.
Abstract: This paper proposes a quadratic differential and integration (QDI) technique for the design of buck converters with small equivalent series resistance (ESR) of the output capacitor. The QDI circuit not only further removes the dependence of ESR in the V2 control but also achieves a fast transient response with small load transient voltage variation. The experimental results show the output voltage can have voltage ripple about 30 mV and recovery time of 20 μs in case of 300 mA load current variation.
55 citations
TL;DR: In this paper, the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layers, which is related to the capacitance correction factor.
Abstract: Schottky varactor frequency multipliers are used to generate local oscillator power at millimeter and submillimeter wavelengths. The equivalent circuit of the Schottky varactor contains a junction capacitance, a junction conductance, a series resistance and a model for electron velocity saturation. At millimeter wavelengths the equivalent circuit is affected by the edge effects, which are due to the small-area circular anode. The correction factors due to the edge effect for the junction capacitance and for the series resistance are available in the literature. In this work the electron velocity saturation is modeled by limiting the velocity of the transition front between the depleted and undepleted layer. By using this model the maximum current of the diode is given by the actual area of the transition front between depleted and undepleted layers, and is therefore related to the capacitance correction factor. The new model has been tested by analyzing a two diode balanced doubler for 160 GHz presented earlier in the literature. The agreement between the theoretical results and the measurements is excellent. The new diode model is useful in optimization of varactors for high millimeter and submillimeter wave frequencies. >
55 citations