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Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.


Papers
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Journal ArticleDOI
TL;DR: This article tackles the practical difficulties associated with capacitor core-temperature estimation using the capacitance and demonstrates a successful implementation strategy for applying this method in power converters to estimate core temperature online.
Abstract: Aluminum electrolytic capacitors are some of the weakest components in a power converter system. Therefore, condition monitoring of capacitors can prevent unexpected system downtime due to capacitor failures. This article proposes a condition monitoring system for electrolytic capacitors used as dc-link capacitors in front-end rectifier-fed three-phase inverters. The proposed methodology is based on equivalent series resistance (ESR) and capacitance estimation using the Goertzel algorithm. The ESR is used as the degradation indicator, whereas the capacitance value is used as both degradation indicator and temperature-sensitive electrical parameter to estimate core or hotspot temperature. Even though the use of capacitance to estimate hotspot temperature has already been proposed, this article tackles the practical difficulties associated with capacitor core-temperature estimation using the capacitance and demonstrates a successful implementation strategy for applying this method in power converters to estimate core temperature online. It also introduces a self-calibration procedure to mitigate ageing-related errors in temperature estimation. An experimental setup is used to verify the proposed conditioning monitoring system. The experimental results prove the effectiveness and accuracy of the proposed technique.

52 citations

Patent
10 Jul 1990
TL;DR: In this article, a CMOS output buffer is proposed to protect against ESD by incorporating a low-resistance path within the p-channel pull-up device, where the distance between the n-type diffusion and the drain diffusions in the pullup device reduces the series "on" resistance of the drain-to-n-well diode of the pull-down device, to a level which keeps the voltage at the output terminal below the reverse-bias breakdown voltage.
Abstract: A CMOS output buffer is disclosed, which provides ESD protection by incorporating a low resistance path within the p-channel pull-up device. Output buffers according to the prior art can be damaged by ESD occurring at the output terminal having a positive polarity, as the drain-to-substrate diode of the pull-down transistor breaks down in the reverse-bias direction, especially when second breakdown occurs. The p-channel pull-up device, formed within an n-well, is fabricated to have n-type diffusions disposed near to the p-type drain diffusions. The distance between the n-type diffusion and the drain diffusions in the pull-up device reduces the series "on" resistance of the drain-to-n-well diode of the pull-up device, to a level which keeps the voltage at the output terminal below the reverse-bias breakdown voltage of the drain-to-substrate diode in the pull-down device. The pull-up device may be constructed in a ladder structure to facillitate the reduction of this resistance. A further embodiment of the invention is disclosed which provides the same protection to the n-channel pull-down device, by way of an n-well diode with low series resistance, for open-drain or other pull-up configurations.

52 citations

Patent
04 Sep 2008
TL;DR: In this article, a method for producing electrolytic capacitors with low equivalent series resistance and low residual current, consisting of a solid electrolyte and an intermediate layer and an outer layer comprising conductive polymers, was described.
Abstract: The invention relates to a method for producing electrolytic capacitors with low equivalent series resistance and low residual current, consisting of a solid electrolyte and an intermediate layer and an outer layer comprising conductive polymers, to electrolytic capacitors produced using this method and also to the use of electrolytic capacitors of this type.

52 citations

Journal ArticleDOI
TL;DR: In this article, two miniature electrochemical capacitors, of high power and sufficient energy capacity, are prepared using photolithography and transferred to a plastic substrate, where the preparation procedure involves, inverting a 60μm thick interdigital pattern of multi-walled carbon nanotubes (CNT) with a Scotch tape, such that the pre-sputtered gold layer at the bottom effectively collects interfacial charge.

51 citations

Journal ArticleDOI
TL;DR: In this paper, an organic-inorganic heterojunction based on a BODIPY dyes has been produced by forming dye thin film on n-Si and the electrical parameters of the structure have been investigated by current-voltage (I-V) and capacitance voltage (C-V).

51 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
2023121
2022235
2021126
2020170
2019171
2018206