Equivalent series resistance

About: Equivalent series resistance is a research topic. Over the lifetime, 5335 publications have been published within this topic receiving 83362 citations. The topic is also known as: ESR.

A new interpretation of "End" resistance measurements

Abstract: We propose a new interpretation of the "end" resistance measurements for field-effect transistors (FET's). This interpretation is based on the solution of the current transport equations under the gate and relates the "end" resistance to the source series resistance and the channel resistance of the device. The values of the series source and drain resistances determined for GaAs ion-implanted FET's, using our formulas for the "end" resistance, are in excellent agreement with the values obtained using our modification of the Fukui method [1].

A comparative study of BSF layers for GaAs-based single-junction or multijunction concentrator solar cells

Abstract: An effective back surface field is a key structural element for a high-efficiency GaAs concentrator solar cell, either in a multijunction or in a single-junction device. In this paper, several BSF materials are analysed, namely: (1) p++GaAs(Zn), (2) p+Ga0.5In0.5P(Zn) and (3) p++Al0.2Ga0.8As(C). The results of the comparison demonstrate that the best option is C-doped Al0.2Ga0.8As, which exhibits a low series resistance and behaves as an excellent minority carrier mirror; p++GaAs(Zn) shows reduced minority carrier mirror properties resulting from Zn diffusion and p+Ga0.5In0.5P(Zn) is shown to produce important series resistance problems because of an unfavourable heterojunction with GaAs.

Peak-power and internal series resistance measurement under natural ambient conditions

Abstract: Quality inspection of PV-modules includes measurement of peak-power Ppk and internal series resistance R s. Peak- power is defined as maximum power under standard test conditions (STC). As the peak-power can decrease due to degradation effects, a continuous quality inspection has to be realized on-site under natural ambient conditions. Losses in the PV-modules can be described by an internal series resistance R s. An increasing R s shows internal losses as well as degrading contacts. A measuring method is presented, which can measure under natural ambient conditions and directly display the results peak-power P pk and internal series resistance R s. I-V-characteristics measured under ambient conditions can be corrected concerning temperature and irradiation according to IEC 60891. The description of the characteristic by the "effective solar cell characteristic" makes it possible to explicitely carry out the calculations for P pk. IEC 60891 also describes a method for the evaluation of the internal series resistance Rs. A graphic method is used in order to determin certain points in the I-V-characteristic, which serve as input-values for the calculation of the series resistance. The accuracy of this graphic method is limited by the accuracy of the graphically determi ned points. Using the method of the "effective solar cell characteristic" it is possible to explicitely calculate the demanded poin ts of the I-V-characteristic, thus beeing capable of explicit calculation of the series resistance R s. The method of the "effective solar cell characteristic" is presented as well as some significant results concerning P pk- and Rs-measurement under natural ambient conditions.