Showing papers on "Erbium published in 2008"
TL;DR: In this article, a ring-cavity thulium fiber laser with a single-wall carbon nanotube absorber was used in transmission, achieving an average output power of 3.4 mW.
Abstract: We report a ring-cavity thulium fiber laser mode locked with a single-wall carbon nanotube absorber used in transmission. A carboxymethyl cellulose polymer film with incorporated carbon nanotubes synthesized by the arc discharge method has an absorption coinciding with in the amplification bandwidth of a Tm-doped fiber. This laser is pumped by an erbium fiber laser at 1.57 μm wavelength and produces a 37 MHz train of mode-locked 1.32 ps pulses at 1.93 μm wavelength with an average output power of 3.4 mW.
377 citations
TL;DR: The design, fabrication, and characterization of SPP waveguides, thin gold metal strips, embedded in erbium (Er) doped phosphate glass is presented, which can be suitable as integrated devices coupling electronic and photonic data transmissions as well as SPP amplifiers and SPP lasers.
Abstract: We report a direct experimental evidence of stimulated emission of surface plasmon polaritons (SPPs) at telecom wavelengths (1532 nm) with erbium doped glass as a gain medium. We observe an increase in the propagation length of signal surface plasmons when erbium ions are excited optically using pump SPP. The design, fabrication, and characterization of SPP waveguides, thin gold metal strips, embedded in erbium (Er) doped phosphate glass is presented. Such systems can be suitable as integrated devices coupling electronic and photonic data transmissions as well as SPP amplifiers and SPP lasers.
176 citations
TL;DR: In this paper, the authors evaluated the Er3+-doped Ge20Ga5Sb10S65 glass as a potential fiber laser source operating in the 3-5 µm mid-IR spectral region.
132 citations
TL;DR: In this article, a distributed/discrete hybrid tellurite and silica-based fiber Raman amplifier (FRA) was constructed as an S + C + L band WDM repeater with a gain bandwidth of 127-nm.
Abstract: This paper reviews tellurite-based fibers and their applications to optical communication networks. First, an investigation of tellurite-based glass and the fabrication of conventional step-index fibers and photonic crystal fibers (PCF) are described. By purifying the raw materials and employing a novel PCF fabrication process, low background losses were achieved for an Er3+-doped, an undoped tellurite-based fiber and a tellurite-based PCF. Second, the optical properties of Er3+-doped tellurite-based glass and fiber, and the gain characteristics of erbium doped tellurite fiber amplifiers (EDTFAs) were studied. A seamless, low noise and gain flattened C + L band EDTFA was realized, and an S + C + L band amplifier was constructed by combining an EDTFA and a thulium-doped fluoride fiber amplifier (TDFFA) in parallel. Third, it is confirmed that the Raman scattering characteristic of tellurite-based fiber has such a large gain coefficient and Stokes shift that it is possible achieve a wideband tellurite-based fiber Raman amplifier. To overcome several problems, a distributed/discrete hybrid tellurite- and silica-based fiber Raman amplifier (FRA) was constructed as an S + C + L band WDM repeater with a gain bandwidth of 127-nm. Fourth, Brillouin amplification and the simulated performance of slow light generation in a tellurite-based fiber were investigated. The fiber exhibits the largest time delay per unit power of 19.9 ns/mW. Finally, a carrier-envelope offset (CEO)-locked frequency comb with low fiber coupling pulse energy (230 pJ) was demonstrated by using a tellurite-based PCF. This method has the potential to lock the CEO with a lower pulse energy and thus provide a low-noise and high-accuracy optical frequency comb at telecommunication wavelengths. These tellurite-based fibers with low background loss thus offer attractive functions for applications in the optical communication field.
87 citations
TL;DR: In this article, a mode-locked soliton erbium-doped fiber laser was demonstrated with a saturable absorber made of a high-optical quality film based on cellulose derivative with dispersed carbon single-wall nanotubes.
Abstract: A mode-locked soliton erbium-doped fiber laser generating 177fs pulses is demonstrated. The laser pumped by a 85mW, 980nm laser diode emits 7mW at 1.56μm at a pulse repetition rate of 50MHz. Passive mode locking is achieved with a saturable absorber made of a high-optical quality film based on cellulose derivative with dispersed carbon single-wall nanotubes. The film is prepared with the original technique by using carbon nanotubes synthesized by the arc-discharge method.
83 citations
TL;DR: The fabrication and performance of the first C-band directly written monolithic waveguide laser (WGL) is reported, which consisted of an optical waveguide that included a distributed feedback Bragg grating structure.
Abstract: We report the fabrication and performance of the first C-band directly-written monolithic waveguide-laser. The waveguide-laser device was created in an Erbium and Ytterbium doped phosphate glass host and consisted of an optical waveguide that included a distributed feedback Bragg grating structure. The femtosecond laser direct-write technique was used to create both the waveguide and the waveguide-Bragg grating simultaneously and in a single processing step. The waveguide-laser was optically pumped at approximately 980 nm and lased at 1537nm with a bandwidth of less than 4 pm.
81 citations
TL;DR: In this paper, photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals.
Abstract: Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540nm wavelength Experimentally measured quality factors of ∼6000 were found to be consistent theoretical predictions The Purcell factor of 14 was estimated from the observed 20-fold enhancement of Erbium luminescence
75 citations
TL;DR: In this article, the energy transfer process taking place at selective pulsed and CW laser excitation is investigated experimentally, and it is shown that in the CaF 2 :RE crystals efficient conversion of IR radiation from the ∼1.5μm region to the ∼ 1μm regions occurs, and these crystals are perspective for using in spectral converters for enhancing solar cell efficiency.
60 citations
TL;DR: FS-laser micromachining of active waveguides in a new erbium-doped phospho-tellurite glass by means of a compact cavity-dumped Yb-based writing system demonstrated internal gain in the whole C+L band of optical communications.
Abstract: We report on fs-laser micromachining of active waveguides in a new erbium-doped phospho-tellurite glass by means of a compact cavity-dumped Yb-based writing system. The spectroscopic properties of the glass were investigated, and the fs-laser written waveguides were characterized in terms of passive as well as active performance. In particular, internal gain was demonstrated in the whole C+L band of optical communications (1530–1610 nm).
58 citations
TL;DR: In this article, a new class of Erbium doped glasses with compositions xNa2O-(60 - x) PbCl2-40P2O5 (x = 0, 10, 20 and 30) were fabricated and characterized for optical properties.
55 citations
TL;DR: In this article, a simple dual-wavelength single-longitudinal-mode erbium-doped fiber laser is proposed by incorporating a fibre Bragg grating pair, which is used as a Fabry-Perot filter with two ultra-narrow (similar to 0.12 pm) transmission bands.
Abstract: A simple dual-wavelength single-longitudinal-mode erbium-doped fibre laser is proposed by incorporating a fibre Bragg grating pair, which is used as a Fabry-Perot filter with two ultra-narrow (similar to 0.12 pm) transmission bands. Stable dual-wavelength single-longitudinal-mode lasing with a wavelength spacing of similar to 0.08 nm is achieved at room temperature. By beating the dual-wavelengths at a photodetector, a microwave signal at 9.616 GHz is demonstrated with a frequency stability better than 1 MHz and a spectral width less that 10 kHz.
TL;DR: In this paper, the effects of thermal annealing performed in N2 or O2 ambient at 1200°C on the structural and optical properties of Er silicate films having different compositions (Er2SiO5, Er2Si2O7, and their mixture).
Abstract: We report the effects of thermal annealing performed in N2 or O2 ambient at 1200°C on the structural and optical properties of Er silicate films having different compositions (Er2SiO5, Er2Si2O7, and their mixture). We demonstrate that the chemical composition of the stoichiometric films is preserved after the thermal treatments. All different crystalline structures formed after the thermal annealing are identified. Thermal treatments in O2 lead to a strong enhancement of the photoluminescence intensity, owing to the efficient reduction of defect density. In particular the highest optical efficiency is associated to Er ions in the α phase of Er2Si2O7.
TL;DR: This paper investigates an erbium silicate (Er2SiO5) as a light source medium for silicon photonics and discusses the recent studies of Er2 SiO5 and a possibility of the shorter waveguide amplifier.
Abstract: Integration of light sources on a Si chip is one of milestone to establish new paradigm of LSI systems, so-called “silicon photonics.” In recent years remarkable progress has been made in the Si wire waveguide technologies for optical interconnection on a Si chip. In this paper, several Er embedded materials based on silicon are surveyed from the standpoint of application to the light emission and amplification devices for silicon photonics. We have concentrated to investigate an erbium silicate (Er2SiO5) as a light source medium for silicon photonics. To mention the particular features, this material has a layered structure with 0.86-nm period and a large amount of Er (25at%) as its constituent. The single crystalline nature gives several remarkable properties for the application to silicon photonics. We also discuss our recent studies of Er2SiO5 and a possibility of the shorter waveguide amplifier.
TL;DR: In this article, a tunable multi-wavelength self-seeded Brillouin-erbium fiber laser (BEFL) without externally bronzouin pumping was demonstrated.
TL;DR: A perfluorodiphenylphosphinic acid lanthanide (Er or Er-Yb) complex is synthesized by a one-pot process from perfluorsic acid oxide and lanthanides chloride; the photoluminescence quantum efficiency reaches 3.5% higher than the usual erbium organic complexes with the hydrogen-containing ligands.
Abstract: A perfluorodiphenylphosphinic acid lanthanide (Er or Er–Yb) complex is synthesized by a one-pot process from perfluorotriphenylphosphine oxide and lanthanide (Er or Er–Yb) chloride; the photoluminescence quantum efficiency reaches 0.98% for the erbium complex and 3.5% for the erbium–ytterbium complex, about 50 times and 175 times, respectively, higher than the usual erbium organic complexes with the hydrogen-containing ligands.
TL;DR: In this article, the infrared optical emission from erbium-doped silica nanowires is shown to have property characteristic of the material nanostructure and to provide the basis for the fabrication of integrated photonic devices and biosensors.
Abstract: Infrared optical emission from erbium-doped silica nanowires is shown to have property characteristic of the material nanostructure and to provide the basis for the fabrication of integrated photonic devices and biosensors. Silica nanowires of approximately 150 nm diameter were grown on a silicon wafer by metal-induced growth using a thin (20 nm) sputter-deposited palladium layer as a catalyst. The resulting wires were then ion implanted with 110 keV ErO− ions and annealed at 900 °C to optically activate the erbium. These wires exhibited photoluminescence emission at 1.54 μm, characteristic of the I415/2−I413/2 transition in erbium; however, comparison to similarly implanted fused silica layers revealed stronger thermal quenching and longer luminescence lifetimes in the nanowire samples. The former is attributed to an increase in defect-induced quenching partly due to the large surface-volume ratio of the nanowires, while the latter is attributed to a reduction in the optical density of states associated ...
TL;DR: In this article, the optical and photoluminescence properties of Er3+-doped GeGaS glasses of near-stoichiometric composition Ge28Ga6 were examined.
Abstract: We have examined the optical and photoluminescence (PL) properties of Er3+-doped GeGaS glasses of near-stoichiometric composition Ge28Ga6.2S65.3:Er0.5. We have also used powdered samples of various mean sizes (L) to examine the dependence of the 1.54 -mum PL emission spectrum and the PL decay time on the average sample size. Optical absorption spectra of Er3+ ions arising from transitions between different energy manifolds, such as 4 I15 /2 -4 I13/2,4 I15 /2 -4 I11 /2 , etc., have been used to extract Omega2, Omega4, and Omega6 values using the Judd-Ofelt analysis and a Judd-Ofelt radiative lifetime TJO = 2.6 ms for the 4 I13 / 2 -4 I15 / 2 transition. The PL emission spectra and the decay time have been found to depend on the mean sample size. The spectra are broader and the decay times are longer for larger sample sizes, due to photon trapping occurring in the sample. The extrapolated decay time to zero particle size yields a decay time that matches the Judd-Ofelt radiative lifetime almost perfectly, and confirms the argument that the true PL lifetime needs to be measured in fine powders to avoid reabsorption effects. We have estimated the maximum emission cross section as 15.5 X 10-21 cm2.
TL;DR: In this article, the authors applied the Judd-Ofelt (JO) model to the absorption intensities of Er3+ (4f11) transitions to establish the so-called Judd-ofelt intensity parameters: Ω2, Ω4, and Ω6.
Abstract: Erbium-doped tin dioxide (SnO2:Er3+) was obtained by the sol–gel method. Spectroscopic properties of the SnO2:Er3+ are analyzed from the Judd–Ofelt (JO) theory. The JO model has been applied to absorption intensities of Er3+ (4f11) transitions to establish the so-called Judd–Ofelt intensity parameters: Ω2, Ω4, and Ω6. With the weak spectroscopic quality factors Ω4/Ω6, we expect a relatively prominent infrared laser emission. The intensity parameters are used to determine the spontaneous emission probabilities of some relevant transitions, the branching ratios, and the radiative lifetimes of several excited states of Er3+. The emission cross section (1.31×10-20 cm2) is evaluated at 1.54 μm and was found to be relatively high compared to that of erbium in other systems. Efficient green and red up-conversion luminescence were observed, at room temperature, using a 798-nm excitation wavelength. The green up-conversion emission is mainly due to the excited state absorption from 4I11/2, which populates the 4F3/2,5/2 states. The red up-conversion emission is due to the energy transfer process described by Er3+ (4I13/2)+Er3+(4I11/2)→Er3+(4F9/2)+Er3+ (4I15/2) and the cross-relaxation process. The efficient visible up-conversion and infrared luminescence indicate that Er3+-doped sol–gel SnO2 is a promising laser and amplifier material.
TL;DR: In this article, a vacuum plasma-spray coating of erbium doped garnet Er 1.5 Y 1 5 O 12 and Er 2 O 3 on the intermetallic alloy MoSi 2 has been used to produce selective emitters for thermophotovoltaics.
TL;DR: The morphological and optical properties of luminescent silica spheres, obtained by the hydrolysis and condensation of tetraethylorthosilicate, are presented, discussing applications in bioimaging and biosensing.
Abstract: This work presents the morphological and optical properties of luminescent silica spheres, discussing applications in bioimaging and biosensing. The spheres are obtained by the hydrolysis and condensation of tetraethylorthosilicate (TEOS) and can be synthesized by following either a basic or an acidic route. Luminescence emission is induced after incorporation of aminopropyltriethoxysilane (APTES) during synthesis or by introducing an optically active element, such as erbium, or other rare-earth elements. The luminescence properties of APTES-functionalized silica spheres have been investigated and optimized by varying the annealing temperature. On the other hand, erbium incorporation in silica spheres was also studied and the corresponding Er(3+) luminescence emission at 1.54 microm was evaluated for intensity and lifetime. The basic pH environment in the synthesis allows good control of the size of the spheres (approximately 200 nm in diameter), whereas the acidic route produces a wide dispersion in particle size (200-5000 nm). Both these approaches, however, can be followed to obtain an efficient photoluminescence (PL) emission for the APTES-functionalized silica spheres after 400-600 degrees C thermal treatment. If Er(NO(3))(3) is introduced in the basic solution, a rapid precipitation of Er(OH)(3) occurs, but erbium can be easily and efficiently incorporated in the acid-synthesized spheres, showing high PL intensity at 1.54 microm with lifetime of 3.9 ms. Finally, I discuss perspectives for the applications of these luminescent silica spheres, in particular as biological markers for bioimaging and biosensing.
TL;DR: The luminescence properties of Er doped β-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL).
Abstract: The luminescence properties of Er doped β-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL) Doping of the β-Ga_2O_3 was obtained in two different ways: erbium ion implantation into β-Ga_2O_3 and high temperature annealing of a mixture of Er_2O_3 and Ga_2_O3 powders X-ray diffraction shows that the latter samples present both β-Ga_2O_3 and ErGG phases The PL studies demonstrate that the beta-Ga2O3 in these samples is doped with erbium The differences in the luminescence emission and excitation peaks of the Er^3+ ions in these two hosts are studied through selective PL measurements Strong near IR emission and weak green emission from Er^3+ in the β-Ga_2O_3 matrix is obtained The opposite is obtained for Er^3+ in ErGG when excited under the same conditions Room temperature luminescence is observed from erbium in the two hosts
TL;DR: In this paper, the results from photoluminescence and Extended X-ray Absorption Fine Structure (EXAFS) are compared and a clear link between the width of the emission line at 1.5 μm and the amorphous/crystalline local structure around the Er3+ ion is evidenced.
Abstract: The development of materials for optical signal processing represents a major issue in present technology. In this contribution we present a study on Er-doped fiber preforms where particular attention is devoted on how the addition of CaO in the glass modifies the local environment of the rare earth. The results from photoluminescence and Extended X-ray Absorption Fine Structure (EXAFS) are compared and a clear link between the width of the emission line at 1.5 μm and the amorphous/crystalline local structure around the Er3+ ion is evidenced.
TL;DR: In this paper, a current-injected 1.54μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365nm nitride light emitting diodes.
Abstract: Current-injected 1.54μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365nm nitride light emitting diodes. It was found that the 1.54μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.
TL;DR: In this article, the use of rate equations to analyze the sensitization of erbium luminescence by silicon nanoclusters was discussed, and it was shown that photoluminescence dynamics cannot be described using a simple rate equation model.
Abstract: We discuss the use of rate equations to analyze the sensitization of erbium luminescence by silicon nanoclusters. In applying the general form of second-order coupled rate-equations to the Si nanocluster-erbium system, we find that the photoluminescence dynamics cannot be described using a simple rate equation model. Both rise and fall times exhibit a stretched exponential behavior, which we propose arises from a combination of a strongly distance-dependent nanocluster-erbium interaction, along with the finite size distribution and indirect band gap of the silicon nanoclusters. Furthermore, the low fraction of erbium ions that can be excited nonresonantly is a result of the small number of ions coupled to nanoclusters.
TL;DR: Erbium (Er)- and Yb)-codoped monoclinic KLu(WO4)2 single crystals were grown by top seeded solution growth-slow cooling method for several different doping concentrations to obtain macrodefect-free single crystals.
Abstract: Erbium (Er)- and Ytterbium (Yb)-codoped monoclinic KLu(WO4)2 single crystals were grown by top seeded solution growth-slow cooling method for several different doping concentrations. Growth parameters have been optimized to obtain macrodefect-free single crystals. Er energy levels involved in the 4I13/2-->4I15/2 were determined by 6 K polarized optical absorption. The maximum emission cross section for this electronic transition has been evaluated, being 2.85x10(-20) cm2 for E||Nm at 1535 nm. Laser oscillation in the 1.5 microm range was obtained by pumping the Yb ion at 980 nm and sensitizing Er. The maximum output power achieved was 152 mW, with 1.2% slope efficiency.
TL;DR: It is found that the substitution with PbF(2) provides a couple of potentials: shortening the UV cutoff band and decreasing the phonon energy of host glasses, indicating the possibility of bismuth-germanate-lead based glasses as photonics devices.
TL;DR: In this paper, a set of novel silicate glasses containing ZnO and co-doped with Er3+ and Yb3+ was designed as substrates for optical waveguide amplifiers.
Abstract: A set of novel silicate glasses containing ZnO and co-doped with Er3+ and Yb3+ was designed as substrates for optical waveguide amplifiers. Characterized by exceptionally low up-conversion, minimum Er concentration quenching and high mechanical as well as chemical stability, the reported glasses can compete with phosphate-based materials typically used in the state-of-art active devices. Straight channel waveguides with propagation losses as low as 0.18 dB/cm were fabricated in these substrates using Ag+ hArr Na+ and K + hArr Na+ thermal ion exchange. Net on-chip gain values of 6.7 dB at 1537 nm were measured and a net fiber to-fiber gain of 5 dB was achieved when pumped at 976 nm. A six-level spatially resolved numerical model of an Er-Yb co-doped active waveguide was developed to analyze and optimize the amplifier performance. Modification of the rare-earth dopant concentration and the channel waveguide geometry was proposed to increase the gain figure and improve the overall amplifier efficiency.
TL;DR: The morphological and optical properties of luminescent silica spheres are discussed and investigated and it is shown that the acid synthesis route produces very regular spherical particles, but their diameter vary in the range of 200–4,000 nm.
Abstract: In this work we discuss and investigate the morphological and optical properties of luminescent silica spheres which can have interesting applications in bioimaging and biosensing. The spheres are synthesized following an acid route by the hydrolysis and condensation of tetraethylortosilicate (TEOS) and can be functionalized by incorporation of aminopropyl-triethoxysilane (APTES) during the synthesis, inducing a significant luminescence that can be attributed to a recombination mechanism from localized organic defects related to –NH2 groups. It is shown that the acid synthesis route produces very regular spherical particles, but their diameter vary in the range of 200–4,000 nm. The luminescence properties have been investigated and optimized by variation of the annealing temperature for the functionalized spheres, obtaining the most efficient PL emission after a thermal treatment of 1 h at 600 °C in air. Moreover, the possibility to introduce rare earths like erbium in the spheres was also studied and the corresponding Er3 luminescence emission at 1.53 μm is reported in terms of intensity and lifetime, pointing out that erbium can be easily and efficiently incorporated during the acid synthesis giving high PL intensity with a good lifetime of 3.9 ms.
TL;DR: In this article, an efficient erbium andytterbium-doped fiber amplifier (EYDFA) was demonstrated by forward and backward pumping a 3 m erbiam/ytter bium co-oped fibers (EYDF) in single-and double-pass configurations using a 20mW pump.
Abstract: An efficient erbium–ytterbium-doped fiber amplifier (EYDFA) is demonstrated by forward and backward pumping a 3 m erbium/ytterbium co-doped fibers (EYDF) in single- and double-pass configurations using a 20 mW pump. At the input signal wavelength of 1536 nm, the forward- and backward-pumped double-pass amplifiers achieved a maximum low-signal gain of 37.2 and 28.6 dB and a corresponding noise figure of 5.4 and 10.8 dB, respectively. Whereas, the forward- and backward-pumped single-pass amplifiers (at the same wavelength) achieved a maximum low-signal gain of 20.0 and 22.2 dB and a corresponding noise figure of 4.6 and 10.3 dB, respectively. The double-pass design offers an economical solution to high-efficiency and high-gain optical amplifiers.
Patent•
19 May 2008TL;DR: In this article, a method of doping an oxide is described, which includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least 1 AlGaA oxide or InAlp oxide via ion implantation to form an Erbiam-doped oxide layer.
Abstract: Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.