Showing papers on "Etching (microfabrication) published in 2013"

New Two-Dimensional Niobium and Vanadium Carbides as Promising Materials for Li-Ion Batteries

Abstract: New two-dimensional niobium and vanadium carbides have been synthesized by selective etching, at room temperature, of Al from Nb2AlC and V2AlC, respectively. These new matrials are promising electrode materials for Li-ion batteries, demonstrating good capability to handle high charge–discharge rates. Reversible capacities of 170 and 260 mA·h·g–1 at 1 C, and 110 and 125 mA·h·g–1 at 10 C were obtained for Nb2C and V2C-based electrodes, respectively.

Plasma etching: Yesterday, today, and tomorrow

Abstract: The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability to anisotropically etch silicon, aluminum, and silicon dioxide in plasmas became the breakthrough that allowed the features in integrated circuits to continue to shrink over the next 40 years. Some of this early history is reviewed, and a discussion of the evolution in plasma reactor design is included. Some basic principles related to plasma etching such as evaporation rates and Langmuir–Hinshelwood adsorption are introduced. Etching mechanisms of selected materials, silicon, silicon dioxide, and low dielectric-constant materials are discussed in detail. A detailed treatment is presented of applications in current silicon integrated circuit fabrication. Finally, some predictions are offered for future needs and advances in plasma etching for silicon and nonsilicon-based devices.

Scalable preparation of porous silicon nanoparticles and their application for lithium-ion battery anodes

Abstract: Nanostructured silicon has generated significant excitement for use as the anode material for lithium-ion batteries; however, more effort is needed to produce nanostructured silicon in a scalable fashion and with good performance. Here, we present a direct preparation of porous silicon nanoparticles as a new kind of nanostructured silicon using a novel two-step approach combining controlled boron doping and facile electroless etching. The porous silicon nanoparticles have been successfully used as high performance lithium-ion battery anodes, with capacities around 1,400 mA·h/g achieved at a current rate of 1 A/g, and 1,000 mA·h/g achieved at 2 A/g, and stable operation when combined with reduced graphene oxide and tested over up to 200 cycles. We attribute the overall good performance to the combination of porous silicon that can accommodate large volume change during cycling and provide large surface area accessible to electrolyte, and reduced graphene oxide that can serve as an elastic and electrically conductive matrix for the porous silicon nanoparticles.

Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air.

Abstract: A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS2 nanosheets in air is reported. Using this method, single-layer (1L) MoS2 nanosheets are achieved after the thinning of MoS2 nanosheets from double-layer (2L) to quadri-layer (4L) at 330 °C. The as-prepared 1L MoS2 nanosheet shows comparable optical and electrical properties with the mechanically exfoliated, pristine one. In addition, for the first time, the MoS2 mesh with high-density of triangular pits is also fabricated at 330 °C, which might arise from the anisotropic etching of the active MoS2 edge sites. As a result of thermal annealing in air, the thinning of MoS2 nanosheet is possible due to its oxidation to form MoO3 . Importantly, the MoO3 fragments on the top of thinned MoS2 layer induces the hole injection, resulting in the p-type channel in fabricated field-effect transistors.

Semiconductor device and method of manufacturing the same

Abstract: A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a source, a drain and a second electrode. The first insulating layer covers the gate and the first electrode. The active layer and the etching stop layer are disposed on the first insulating layer above the gate and the first electrode respectively. The second insulating layer covers the active layer and the etching stop layer and has a first opening and a second opening exposing the active layer and a third opening exposing the etching stop layer. The source and the drain are disposed on the second insulating layer and contact with the active layer through the first opening and the second opening respectively. The second electrode is located on the second insulating layer and contacts with the etching stop layer through the third opening.

Dry-etch for silicon-and-nitrogen-containing films

Abstract: A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

Selective titanium nitride etching

Abstract: Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.

Photonic Crystal Sensors Based on Porous Silicon

Abstract: Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Perot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

Plasma etching apparatus and plasma cleaning method

Abstract: A plasma etching apparatus includes an electrostatic chuck and an etching gas supply unit for supplying an etching gas to a processing space between a first and a second electrode to perform a dry etching process on the target object. The apparatus further includes a cleaning gas supply unit for supplying a cleaning gas to a processing space; a first high frequency power supply unit for supplying a first high frequency power to the first electrode; and a controller for controlling the first high frequency power supply unit such that a first period during which the first high frequency power has a first amplitude that generates the plasma and a second period during which the first high frequency power has a second amplitude that generates substantially no plasma are alternately repeated at a specific cycle when the plasma cleaning is performed in the processing chamber without the target object.

Simultaneous Etching and Doping of TiO2 Nanowire Arrays for Enhanced Photoelectrochemical Performance

Abstract: We developed a postgrowth doping method of TiO2 nanowire arrays by a simultaneous hydrothermal etching and doping in a weakly alkaline condition. The obtained tungsten-doped TiO2 core-shell nanowires have an amorphous shell with a rough surface, in which W species are incorporated into the amorphous TiO2 shell during this simultaneous etching/regrowth step for the optimization of photoelectrochemical performance. Photoanodes made of these W-doped TiO2 core-shell nanowires show a much enhanced photocurrent density of ~1.53 mA/cm(2) at 0.23 V vs Ag/AgCl (1.23 V vs reversible hydrogen electrode), almost 225% of that of the pristine TiO2 nanowire photoanodes. The electrochemical impedance spectroscopy measurement and the density functional theory calculation demonstrate that the substantially improved performance of the dual W-doped and etched TiO2 nanowires is attributed to the enhancement of charge transfer and the increase of charge carrier density, resulting from the combination effect of etching and W-doping. This unconventional, simultaneous etching and doping of pregrown nanowires is facile and takes place under moderate conditions, and it may be extended for other dopants and host materials with increased photoelectrochemical performances.

Efficiency enhancement of InP nanowire solar cells by surface cleaning.

Abstract: We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p–n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces were cleaned after growth by piranha etching. We find that the postgrowth piranha etching is critical for obtaining a good solar cell performance. With this procedure, a high diode rectification factor of 107 is obtained at ±1 V. The resulting NW solar cell exhibits an open-circuit voltage (Voc) of 0.73 V, a short-circuit current density (Jsc) of 21 mA/cm2, and a fill factor (FF) of 0.73 at 1 sun. This yields a power conversion efficiency of up to 11.1% at 1 sun and 10.3% at 12 suns.

On-Demand Hydrogen Generation using Nanosilicon: Splitting Water without Light, Heat, or Electricity

Abstract: We demonstrate that nanosize silicon (∼10 nm diameter) reacts with water to generate hydrogen 1000 times faster than bulk silicon, 100 times faster than previously reported Si structures, and 6 times faster than competing metal formulations. The H2 production rate using 10 nm Si is 150 times that obtained using 100 nm particles, dramatically exceeding the expected effect of increased surface to volume ratio. We attribute this to a change in the etching dynamics at the nanoscale from anisotropic etching of larger silicon to effectively isotropic etching of 10 nm silicon. These results imply that nanosilicon could provide a practical approach for on-demand hydrogen production without addition of heat, light, or electrical energy.

An innovative way of etching MoS 2 : Characterization and mechanistic investigation

Abstract: We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots, and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

Fractal etching of graphene.

Abstract: An anisotropic etching mode is commonly known for perfect crystalline materials, generally leading to simple Euclidean geometric patterns. This principle has also proved to apply to the etching of the thinnest crystalline material, graphene, resulting in hexagonal holes with zigzag edge structures. Here we demonstrate for the first time that the graphene etching mode can deviate significantly from simple anisotropic etching. Using an as-grown graphene film on a liquid copper surface as a model system, we show that the etched graphene pattern can be modulated from a simple hexagonal pattern to complex fractal geometric patterns with sixfold symmetry by varying the Ar/H2 flow rate ratio. The etched fractal patterns are formed by the repeated construction of a basic identical motif, and the physical origin of the pattern formation is consistent with a diffusion-controlled process. The fractal etching mode of graphene presents an intriguing case for the fundamental study of material etching.

Tungsten oxide processing

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH 3 ). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Differential silicon oxide etch

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

Internal plasma grid for semiconductor fabrication

Abstract: The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. Where multiple plasma grids are used, one or more of the grids may be movable, allowing for tenability of the plasma conditions in at least the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber.

Plasma etching method and plasma etching apparatus

Abstract: A plasma etching method includes etching an amorphous carbon film by a plasma of an oxygen-containing gas using, as a mask, an SiON film having a predetermined pattern formed on a target object, etching a silicon oxide film by a plasma of a processing gas using the amorphous carbon film as a mask while removing the SiON film remaining on the etched amorphous carbon film by the plasma of the processing gas. The plasma etching method further includes modifying the amorphous carbon film by a plasma of a sulfur-containing gas or a hydrogen-containing gas while applying a negative DC voltage to an upper electrode containing silicon after the SiON film is removed from the amorphous carbon film, and etching the silicon oxide film again by the plasma of the processing gas using the modified amorphous carbon film as a mask.

Method of removing a metal hardmask

Abstract: Methods of removing metal hardmasks in the presence of ultra low-k dielectric films are described In an example, a method of patterning a low-k dielectric film includes forming a pattern in a metal nitride hardmask layer formed above a low-k dielectric film formed above a substrate The method also includes etching, using the metal nitride hardmask layer as a mask, the pattern at least partially into the low-k dielectric film, the etching involving using a plasma etch based on SiF x The etching also involves forming an SiO x passivation layer at least on sidewalls of the low-k dielectric film formed during the etching The method also includes removing the metal nitride hardmask layer by a dry etch process, where the SiO x passivation layer protects the low-k dielectric film during the removing

Radical-component oxide etch

Abstract: A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride.

Dry-etch for selective tungsten removal

Abstract: Methods of selectively etching tungsten relative to silicon-containing films (e.g. silicon oxide, silicon carbon nitride and (poly)silicon) as well as tungsten oxide are described. The methods include a remote plasma etch formed from a fluorine-containing precursor and/or hydrogen (H2). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten. The plasma effluents react with exposed surfaces and selectively remove tungsten while very slowly removing other exposed materials. Sequential and simultaneous methods are included to remove thin tungsten oxide which may, for example, result from exposure to the atmosphere.

Selective titanium nitride removal

Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

Si-Encapsulating Hollow Carbon Electrodes via Electroless Etching for Lithium-Ion Batteries

Abstract: Remarkable improvements in the electrochemical performance of Si materials for Li-ion batteries have been recently achieved, but the inherent volume change of Si still induces electrode expansion and external cell deformation. Here, the void structure in Si-encapsulating hollow carbons is optimized in order to minimize the volume expansion of Si-based anodes and improve electrochemical performance. When compared to chemical etching, the hollow structure is achieved via electroless etching is more advanced due to the improved electrical contact between carbon and Si. Despite the very thick electrodes (30 ∼ 40 μm), this results in better cycle and rate performances including little capacity fading over 50 cycles and 1100 mA h g−1 at 2C rate. Also, an in situ dilatometer technique is used to perform a comprehensive study of electrode thickness change, and Si-encapsulating hollow carbon mitigates the volume change of electrodes by adoption of void space, resulting in a small volume increase of 18% after full lithiation corresponding with a reversible capacity of about 2000 mA h g−1.

ZnSe etching of Zn-rich Cu2ZnSnSe4: an oxidation route for improved solar-cell efficiency.

Abstract: Cu2ZnSnSe4 kesterite compounds are some of the most promising materials for low-cost thin-film photovoltaics. However, the synthesis of absorbers for high-performing devices is still a complex issue. So far, the best devices rely on absorbers grown in a Zn-rich and Cu-poor environment. These off-stoichiometric conditions favor the presence of a ZnSe secondary phase, which has been proved to be highly detrimental for device performance. Therefore, an effective method for the selective removal of this phase is important. Previous attempts to remove this phase by using acidic etching or highly toxic organic compounds have been reported but so far with moderate impact on device performance. Herein, a new oxidizing route to ensure efficient removal of ZnSe is presented based on treatment with a mixture of an oxidizing agent and a mineral acid followed by treatment in an aqueous Na2S solution. Three different oxidizing agents were tested: H2O2, KMnO4, and K2Cr2O7, combined with different concentrations of H2SO4. With all of these agents Se2− from the ZnSe surface phase is selectively oxidized to Se0, forming an elemental Se phase, which is removed with the subsequent etching in Na2S. Using KMnO4 in a H2SO4-based medium, a large improvement on the conversion efficiency of the devices is observed, related to an improvement of all the optoelectronic parameters of the cells. Improvement of short-circuit current density (Jsc) and series resistance is directly related to the selective etching of the ZnSe surface phase, which has a demonstrated current-blocking effect. In addition, a significant improvement of open-circuit voltage (Voc), shunt resistance (Rsh), and fill factor (FF) are attributed to a passivation effect of the kesterite absorber surface resulting from the chemical processes, an effect that likely leads to a reduction of nonradiative-recombination states density and a subsequent improvement of the p–n junction.

Ultra-high speed anisotropic reactive ion etching

Abstract: A system and method for reactive ion etching (RIE) system of a material is provided. The system includes a plasma chamber comprising a plasma source and a gas inlet, a diffusion chamber comprising a substrate holder for supporting a substrate with a surface comprising the material and a gas diffuser, and a source of a processing gas coupled to the gas diffuser. In the system and method, at least one radical of the processing gas is reactive with the material to perform etching of the material, the gas diffuser is configured to introduce the processing gas into the processing region, and the substrate holder comprises an electrode that can be selectively biased to draw ions generated by the plasma source into the processing region to interact with the at least one processing gas to generate the at least one radical at the surface.

Methods for etching an etching stop layer utilizing a cyclical etching process

Abstract: Methods for etching an etching stop layer disposed on the substrate using a cyclical etching process are provided. In one embodiment, a method for etching an etching stop layer includes performing a treatment process on the substrate having a silicon nitride layer disposed thereon by supplying a treatment gas mixture into the processing chamber to treat the silicon nitride layer, and performing a chemical etching process on the substrate by supplying a chemical etching gas mixture into the processing chamber, wherein the chemical etching gas mixture includes at least an ammonium gas and a nitrogen trifluoride, wherein the chemical etching process etches the treated silicon nitride layer.

An innovative way of etching MoS2: Characterization and mechanistic investigation

Abstract: We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals.

Silicon-carbon-nitride selective etch

Abstract: A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride.

Non-local plasma oxide etch

Abstract: A method of etching exposed titanium oxide on heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flawed into a substrate processing region where the plasma effluents may combine with a nitrogen-containing precursor such as an amine (N:) containing precursor. Reactants thereby produced etch, the patterned heterogeneous structures with high titanium oxide selectivity while the substrate is at elevated temperature. Titanium oxide etch may alternatively involve supplying a fluorine-containing precursor and a source of nitrogen-and-hydrogen-containing precursor to the remote plasma. The methods may be used to remove titanium oxide while removing little or no low-K dielectric, polysilicon, silicon nitride or titanium nitride.