Showing papers on "Etching (microfabrication) published in 2016"

Porous Two‐Dimensional Transition Metal Carbide (MXene) Flakes for High‐Performance Li‐Ion Storage

Abstract: Herein we develop a chemical etching method to produce porous two-dimensional (2D) Ti3C2Tx MXenes at room temperature in aqueous solutions. The as-produced porous Ti3C2Tx (p-Ti3C2Tx) have larger sp ...

Selectivity on Etching: Creation of High-Energy Facets on Copper Nanocrystals for CO2 Electrochemical Reduction

Abstract: Creating high-energy facets on the surface of catalyst nanocrystals represents a promising method for enhancing their catalytic activity. Herein we show that crystal etching as the reverse process of crystal growth can directly endow nanocrystal surfaces with high-energy facets. The key is to avoid significant modification of the surface energies of the nanocrystal facets by capping effects from solvents, ions, and ligands. Using Cu nanocubes as the starting material, we have successfully demonstrated the creation of high-energy facets in metal nanocrystals by controlled chemical etching. The etched Cu nanocrystals with enriched high-energy {110} facets showed significantly enhanced activity toward CO2 reduction. We believe the etching-based strategy could be extended to the synthesis of nanocrystals of many other catalysts with more active high-energy facets.

A Green and Facile Way to Prepare Granadilla-Like Silicon-Based Anode Materials for Li-Ion Batteries

Abstract: A yolk-shell-structured carbon@void@silicon (CVS) anode material in which a void space is created between the inside silicon nanoparticle and the outer carbon shell is considered as a promising candidate for Li-ion cells. Untill now, all the previous yolk-shell composites were fabricated through a templating method, wherein the SiO2 layer acts as a sacrificial layer and creates a void by a selective etching method using toxic hydrofluoric acid. However, this method is complex and toxic. Here, a green and facile synthesis of granadilla-like outer carbon coating encapsulated silicon/carbon microspheres which are composed of interconnected carbon framework supported CVS nanobeads is reported. The silicon granadillas are prepared via a modified templating method in which calcium carbonate was selected as a sacrificial layer and acetylene as a carbon precursor. Therefore, the void space inside and among these CVS nanobeads can be formed by removing CaCO3 with diluted hydrochloric acid. As prepared, silicon granadillas having 30% silicon content deliver a reversible capacity of around 1100 mAh g−1 at a current density of 250 mA g−1 after 200 cycles. Besides, this composite exhibits an excellent rate performance of about 830 and 700 mAh g−1 at the current densities of 1000 and 2000 mA g−1, respectively.

The Effect of Hydrofluoric Acid Etching Duration on the Surface Micromorphology, Roughness, and Wettability of Dental Ceramics.

Abstract: The current laboratory study is evaluating the effect of hydrofluoric acid etching duration on the surface characteristics of five silica-based glass ceramics. Changes in the pore pattern, crystal structure, roughness, and wettability were compared and evaluated. Seventy-five rectangularly shaped specimens were cut from each material (IPS e-max™, Dentsply Celtra™, Vita Suprinity™, Vita mark II™, and Vita Suprinity FC™); the sectioned samples were finished, polished, and ultrasonically cleaned. Specimens were randomly assigned into study groups: control (no etching) and four experimental groups (20, 40, 80 and 160 s of etching). The etched surfaces’ microstructure including crystal structure, pore pattern, pore depth, and pore width was studied under a scanning electron microscope, and the surface roughness and wettability were analyzed using a non-contact surface profilometer and a contact angle measuring device, respectively. The results were statistically analyzed using one-way analysis of variance (ANOVA) and the post hoc Tukey’s test. The results showed a significant change in the pore number, pore pattern, crystal structure, surface roughness, and wettability with increased etching duration. Etching for a short time resulted in small pores, and etching for longer times resulted in wider, irregular grooves. A significant increase in the surface roughness and wettability was observed with an increase in the etching duration. The findings also suggested a strong association between the surface roughness and wettability.

Fully Tunable Silicon Nanowire Arrays Fabricated by Soft Nanoparticle Templating.

Abstract: We demonstrate a fabrication breakthrough to produce large-area arrays of vertically aligned silicon nanowires (VA-SiNWs) with full tunability of the geometry of the single nanowires and of the whole array, paving the way toward advanced programmable designs of nanowire platforms. At the core of our fabrication route, termed “Soft Nanoparticle Templating”, is the conversion of gradually compressed self-assembled monolayers of soft nanoparticles (microgels) at a water–oil interface into customized lithographical masks to create VA-SiNW arrays by means of metal-assisted chemical etching (MACE). This combination of bottom-up and top-down techniques affords excellent control of nanowire etching site locations, enabling independent control of nanowire spacing, diameter and height in a single fabrication route. We demonstrate the fabrication of centimeter-scale two-dimensional gradient photonic crystals exhibiting continuously varying structural colors across the entire visible spectrum on a single silicon subs...

Schottky Barrier Catalysis Mechanism in Metal-Assisted Chemical Etching of Silicon.

Abstract: Metal-assisted chemical etching (MACE) is a versatile anisotropic etch for silicon although its mechanism is not well understood. Here we propose that the Schottky junction formed between metal and silicon plays an essential role on the distribution of holes in silicon injected from hydrogen peroxide. The proposed mechanism can be used to explain the dependence of the etching kinetics on the doping level, doping type, crystallographic surface direction, and etchant solution composition. We used the doping dependence of the reaction to fabricate a novel etch stop for the reaction.

Method of cyclic dry etching using etchant film

Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a halogen-containing film using reactive species on the target layer on the substrate; and etching the halogen-containing film using a plasma of a non-halogen etching gas, which plasma alone does not substantially etch the target layer, to generate etchant species at a boundary region of the halogen-containing film and the target layer, thereby etching a portion of the target layer in the boundary region.

Versatile Polymer-Free Graphene Transfer Method and Applications

Abstract: A new method for transferring chemical vapor deposition (CVD)-grown monolayer graphene to a variety of substrates is described. The method makes use of an organic/aqueous biphasic configuration, avoiding the use of any polymeric materials that can cause severe contamination problems. The graphene-coated copper foil sample (on which graphene was grown) sits at the interface between hexane and an aqueous etching solution of ammonium persulfate to remove the copper. With the aid of an Si/SiO2 substrate, the graphene layer is then transferred to a second hexane/water interface to remove etching products. From this new location, CVD graphene is readily transferred to arbitrary substrates, including three-dimensional architectures as represented by atomic force microscopy (AFM) tips and transmission electron microscopy (TEM) grids. Graphene produces a conformal layer on AFM tips, to the very end, allowing easy production of tips for conductive AFM imaging. Graphene transferred to copper TEM grids provides large...

Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions.

Abstract: Thermal atomic layer etching (ALE) of Al2O3 and HfO2 using sequential, self-limiting fluorination and ligand-exchange reactions was recently demonstrated using HF and tin acetylacetonate (Sn(acac)2) as the reactants. This new thermal pathway for ALE represents the reverse of atomic layer deposition (ALD) and should lead to isotropic etching. Atomic layer deposition and ALE can together define the atomic layer growth and removal steps required for advanced semiconductor fabrication. The thermal ALE of many materials should be possible using fluorination and ligand-exchange reactions. The chemical details of ligand-exchange can lead to selective ALE between various materials. Thermal ALE could produce conformal etching in high-aspect-ratio structures. Thermal ALE could also yield ultrasmooth thin films based on deposit/etch-back methods. Enhancement of ALE rates and possible anisotropic ALE could be achieved using radicals or ions together with thermal ALE.

Selective Plasma Etching of Polymeric Substrates for Advanced Applications.

Abstract: In today’s nanoworld, there is a strong need to manipulate and process materials on an atom-by-atom scale with new tools such as reactive plasma, which in some states enables high selectivity of interaction between plasma species and materials. These interactions first involve preferential interactions with precise bonds in materials and later cause etching. This typically occurs based on material stability, which leads to preferential etching of one material over other. This process is especially interesting for polymeric substrates with increasing complexity and a “zoo” of bonds, which are used in numerous applications. In this comprehensive summary, we encompass the complete selective etching of polymers and polymer matrix micro-/nanocomposites with plasma and unravel the mechanisms behind the scenes, which ultimately leads to the enhancement of surface properties and device performance.

Atomic-layer soft plasma etching of MoS2.

Abstract: Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications.

Fabrication of stable and durable superhydrophobic surface on copper substrates for oil-water separation and ice-over delay.

Abstract: We report a simple and rapid method to fabricate superhydrophobic films on copper substrates via Fe(3+) etching and octadecanethiol (ODT) modification. The etching process can be as short as 5 min and the ODT treatment only takes several seconds. In addition, the whole process is quite flexible in reaction time. The superhydrophobicity of as-prepared surfaces is mechanically durable and chemically stable, which have great performance in oil-water separation and ice-over resistance.

Silicon selective removal

Abstract: A method of etching exposed silicon on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a remote plasma The remote plasma excites a fluorine-containing precursor Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a hydrogen-containing precursor The combination react with the patterned heterogeneous structures to remove an exposed silicon portion faster than a second exposed portion The silicon selectivity results from the presence of an ion suppressor positioned between the remote plasma and the substrate processing region The methods may be used to selectively remove silicon faster than silicon oxide, silicon nitride and a variety of metal-containing materials The methods may be used to remove small etch amounts in a controlled manner and may result in an extremely smooth silicon surface

Fabrication of Superhydrophobic–Superoleophilic Fabrics by an Etching and Dip-Coating Two-Step Method for Oil–Water Separation

Abstract: A dual-scale roughness structure superhydrophobic–superoleophilic fabric was fabricated by first etching the microscale fibers with alkali and then dip-coating in a mixed solution of a polymer of intrinsic microporosity (PIM-1) and fluorinated alkylsilane (PTES). Scanning electron microscopy analysis showed that the etching process created nanoscale pits on the fiber surface and subsequently formed hierarchical structures on the fabric surface. Coating of PIM-1–PTES on the etched fibers significantly lowered the surface energy of the fibers, thus causing the fabric surface to possess superhydrophobicity with a water contact angle of 158° and superoleophilicity with an oil contact angle of 0°. The obtained superwettable fabric was mounted in a leak-proof manner on the open-end glass bottle, like an oil skimmer container. Such a new surface-tension-driven, gravity-assisted, one-step, oil–water separation device was used to separate the oil–water mixture with a separation efficiency as high as 99.96% after 3...

Enhanced Etching, Surface Damage Recovery, and Submicron Patterning of Hybrid Perovskites using a Chemically Gas-Assisted Focused-Ion Beam for Subwavelength Grating Photonic Applications.

Abstract: The high optical gain and absorption of organic–inorganic hybrid perovskites have attracted attention for photonic device applications. However, owing to the sensitivity of organic moieties to solvents and temperature, device processing is challenging, particularly for patterning. Here, we report the direct patterning of perovskites using chemically gas-assisted focused-ion beam (GAFIB) etching with XeF2 and I2 precursors. We demonstrate etching enhancement in addition to controllability and marginal surface damage compared to focused-ion beam (FIB) etching without precursors. Utilizing the GAFIB etching, we fabricated a uniform and periodic submicron perovskite subwavelength grating (SWG) absorber with broadband absorption and nanoscale precision. Our results demonstrate the use of FIB as a submicron patterning tool and a means of providing surface treatment (after FIB patterning to minimize optical loss) for perovskite photonic nanostructures. The SWG absorber can be patterned on perovskite solar cells ...

Direct fabrication of compound-eye microlens array on curved surfaces by a facile femtosecond laser enhanced wet etching process

Abstract: We report a direct fabrication of an omnidirectional negative microlens array on a curved substrate by a femtosecond laser enhanced chemical etching process, which is utilized as a molding template for duplicating bioinspired compound eyes. The femtosecond laser treatment of the curved glass substrate employs a common x-y-z stage without rotating the sample surface perpendicular to the laser beam, and uniform, omnidirectional-aligned negative microlenses are generated after a hydrofluoric acid etching. Using the negative microlens array on the concave glass substrate as a molding template, we fabricate an artificial compound eye with 3000 positive microlenses of 95-μm diameter close-packed on a 5-mm polymer hemisphere. Compared to the transferring process, the negative microlenses directly fabricated on the curved mold by our method are distortion-free, and the duplicated artificial eye presents clear and uniform imaging capabilities. This work provides a facile and efficient route to the fabrication of microlenses on any curved substrates without complicated alignment and motion control processes, which has the potential for the development of new microlens-based devices and systems.

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging.

Abstract: In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene-graphene and graphene-substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.

Oxidative‐Etching‐Assisted Synthesis of Centimeter‐Sized Single‐Crystalline Graphene

Abstract: Centimeter-sized single-crystalline graphene is obtained by an oxidative-etching-assisted chemical vapor deposition (CVD) method. Gaseous oxidants are found to be highly responsible for graphene etching. By diminishing the uncertain amount of H2 O vapor in commercial H2 and precisely introducing additional O2 , the graphene nucleation density can be well controlled.

PMMA-Etching-Free Transfer of Wafer-scale Chemical Vapor Deposition Two-dimensional Atomic Crystal by a Water Soluble Polyvinyl Alcohol Polymer Method

Abstract: We have explored a facile technique to transfer large area 2-Dimensional (2D) materials grown by chemical vapor deposition method onto various substrates by adding a water-soluble Polyvinyl Alcohol (PVA) layer between the polymethyl-methacrylate (PMMA) and the 2D material film. This technique not only allows the effective transfer to an arbitrary target substrate with a high degree of freedom, but also avoids PMMA etching thereby maintaining the high quality of the transferred 2D materials with minimum contamination. We applied this method to transfer various 2D materials grown on different rigid substrates of general interest, such as graphene on copper foil, h-BN on platinum and MoS2 on SiO2/Si. This facile transfer technique has great potential for future research towards the application of 2D materials in high performance optical, mechanical and electronic devices.

Microfluidic-based photocatalytic microreactor for environmental application: a review of fabrication substrates and techniques, and operating parameters

Abstract: Photochemical technology with microfluidics is emerging as a new platform in environmental science. Microfluidic technology has various advantages, like better mixing and a shorter diffusion distance for the reactants and products; and uniform distribution of light on the photocatalyst. Depending on the material type and related applications, several fabrication techniques have been adopted by various researchers. Microreactors have been prepared by various techniques, such as lithography, etching, mechanical microcutting technology, etc. Lithography can be classified into photolithography, soft lithography and X-ray lithography techniques whereas the etching process is divided into wet etching (chemical etching) and dry etching (plasma etching) techniques. Several substrates, like polymers, such as polydimethyl-siloxane (PDMS), polymethyle-methacrylate (PMMA), hydrogel, etc.; metals, such as stainless steel, titanium foil, etc.; glass, such as silica capillary, glass slide, etc.; and ceramics have been used for microchannel fabrication. During degradation in a microreactor, the degradation efficiency is affected by few important parameters such as flow rate, initial concentration of the target compound, microreactor dimensions, light intensity, photocatalyst structure and catalyst support. The present paper discusses and critically reviews fabrication techniques and substrates used for microchannel fabrication and critical operating parameters for organics, especially dye degradation in the microreactor. The kinetics of degradation has also been discussed.

Systems and methods for ultrahigh selective nitride etch

Abstract: A method for selectively etching a silicon nitride layer on a substrate includes arranging a substrate on a substrate support of a substrate processing chamber The substrate processing chamber includes an upper chamber region, an inductive coil arranged outside of the upper chamber region, a lower chamber region including the substrate support and a gas dispersion device The gas dispersion device includes a plurality of holes in fluid communication with the upper chamber region and the lower chamber region The method includes supplying an etch gas mixture to the upper chamber region and striking inductively coupled plasma in the upper chamber region by supplying power to the inductive coil The etch gas mixture etches silicon nitride, promotes silicon dioxide passivation and promotes polysilicon passivation, The method includes selectively etching the silicon nitride layer on the substrate and extinguishing the inductively coupled plasma after a predetermined period

Toward a durable superhydrophobic aluminum surface by etching and ZnO nanoparticle deposition.

Abstract: Fabrication of suitable roughness is a fundamental step for acquiring superhydrophobic surfaces. For this purpose, a deposition of ZnO nanoparticles on Al surface was carried out by simple immersion and ultrasound approaches. Then, surface energy reduction was performed using stearic acid (STA) ethanol solution for both methods. The results demonstrated that ultrasound would lead to more stable superhydrophobic Al surfaces (STA-ZnO-Al-U) in comparison with simple immersion method (STA-ZnO-Al-I). Besides, etching in HCl solution in another sample was carried out before ZnO deposition for acquiring more mechanically stable superhydrophobic surface. The potentiodynamic measurements demonstrate that etching in HCl solution under ultrasound leads to superhydrophobic surface (STA-ZnO-Al(E)-U). This sample shows remarkable decrease in corrosion current density (icorr) and long-term stability improvement versus immersion in NaCl solution (3.5%) in comparison with the sample prepared without etching (STA-ZnO-Al-U). Scanning electron micrograph (SEM) and energy-dispersive X-ray spectroscopy (EDX) confirmed a more condense and further particle deposition on Al substrate when ultrasound was applied in the system. The crystallite evaluation of deposited ZnO nanoparticles was carried out using X-ray diffractometer (XRD). Finally, for STA grafting verification on Al surface, Fourier transform infrared in conjunction with attenuated total reflection (FTIR-ATR) was used as a proper technique.

Chlorine-based dry etching of β-Ga2O3

Abstract: Reactive ion etching (RIE) and inductively coupled plasma (ICP) etching techniques were used to determine the optimal dry etch conditions for β-Ga2O3. RF power and chamber pressure were examined to study their effects on etch rate and surface roughness for three crystallographic planes, i.e., (100); (010); and ( by RIE. BCl3 etch rate calibrations were performed on all β-Ga2O3 planes studied, in comparison to Cl2. RIE yielded moderate etch rates (<20 nm min−1), and surface roughness showed no clear trend with RF power. Moreover, the effect of bias power, plasma power, and the choice of etchant were studied using ICP. The etches performed by ICP were shown to be superior to RIE in both etch rate and surface roughness, due to the much higher plasma densities and uniformities possible with plasma powers beyond those realized in RIE. The maximum etch rate of 43.0 nm min−1 was achieved using BCl3 in ICP. SF6/BCl3 mixtures, which yield high GaN etch rates, were also studied. However, in contrast to GaN etching, SF6/BCl3 was found to be far less effective than pure BCl3 in etching β-Ga2O3.

Image reversal with ahm gap fill for multiple patterning

Abstract: Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication.

Replacement metal gate and fabrication process with reduced lithography steps

Abstract: Embodiments of the present invention provide a replacement metal gate and a fabrication process with reduced lithography steps. Using selective etching techniques, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps. This, in turn, reduces the overall cost and complexity of fabrication. Furthermore, additional protection is provided during etching, which serves to improve product yield.

Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment

Abstract: In this letter, we report a method by introducing hydrogen plasma treatment to realize normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology, hydrogen plasma was adopted to compensate holes in the p-GaN above the two dimensional electron gas (2DEG) channel to release electrons in the 2DEG channel and form high-resistivity area to reduce leakage current and increase gate control capability. The fabricated p-GaN/AlGaN/GaN HEMT exhibits normally-off operation with a threshold voltage of 1.75 V, a subthreshold swing of 90 mV/dec, a maximum transconductance of 73.1 mS/mm, an ON/OFF ratio of 1 × 107, a breakdown voltage of 393 V, and a maximum drain current density of 188 mA/mm at a gate bias of 6 V. The comparison of the two processes of hydrogen plasma treatment and p-GaN etching has also been made in this work.

Photoenhanced Patterning of Metal Nanowire Networks for Fabrication of Ultraflexible Transparent Devices.

Abstract: Network structures of metal nanowires are a promising candidate for producing a wide range of flexible electronic devices, but only if they can be suitably patterned and retained on various materials. Here we present a new approach to the patterning of metal nanowires by employing intense-pulsed-light (IPL) irradiation to reduce the process to just two steps: irradiation and the subsequent removal of nonirradiated nanowires. This ultrasimple method eliminates the need to employ chemical reagents for etching or improving the adhesion of nanowires, and is compatible with Ag nanowires (AgNWs), Cu nanowires (CuNWs), and most transparent polymers. Furthermore, it is not reliant on additional processes, such as coating, heating, developing, and etching to make a patterned nanowire structure. Using this simple method, ultraflexible and transparent devices such as touch sensor, heater and light emitting diode with an exceptionally high mechanical stability have been successfully fabricated. This new method is exp...