Showing papers on "Etching (microfabrication) published in 2017"
TL;DR: The selective etching of Al from ternary layered transition metal nitride Ti2AlN (MAX) and intercalation were achieved by immersing the powder in a mixture of potassium fluoride and hydrochloric acid and centrifuged to obtain few-layered Ti2NTx.
Abstract: We report on the synthesis, characterization, and application of Ti2N (MXene), a two-dimensional transition metal nitride of M2X type. Synthesis of nitride-based MXenes (Mn+1Nn) is difficult due to their higher formation energy from Mn+1ANn and poor stability of Mn+1Nn layers in the etchant employed, typically HF. Herein, the selective etching of Al from ternary layered transition metal nitride Ti2AlN (MAX) and intercalation were achieved by immersing the powder in a mixture of potassium fluoride and hydrochloric acid. The multilayered Ti2NTx (T is the surface termination) obtained was sonicated in DMSO and centrifuged to obtain few-layered Ti2NTx. MXene formation was verified, and the material was completely characterized by Raman spectroscopy, XRD, XPS, FESEM-EDS, TEM, STM, and AFM techniques. Surface-enhanced Raman scattering (SERS) activity of the synthesized Ti2NTx was investigated by fabricating paper, silicon, and glass-based SERS substrates. A Raman enhancement factor of 1012 was demonstrated usin...
404 citations
TL;DR: In this paper, the authors demonstrate the electrochemical etching of Al from porous Ti2AlC electrodes in dilute hydrochloric acid to form a layer of Ti2CTx MXene.
Abstract: In this study, we successfully demonstrate the electrochemical etching of Al from porous Ti2AlC electrodes in dilute hydrochloric acid to form a layer of Ti2CTx MXene on Ti2AlC. This is the first report on etching of the A layer from the MAX phase in a fluoride-free solution as a less hazardous method to process and handle MXenes. In addition, these MXenes possess only –Cl terminal groups, as well as the common ones, such as –O and –OH. However, electrochemical etching can also result in subsequent over-etching of parent MAX phases to carbide-derived carbon (CDC). We propose a core–shell model to explain electrochemical etching of Ti2AlC to Ti2CTx and CDC. The proposed model suggests that a careful balance in etching parameters is needed to produce MXenes while avoiding over-etching. Our electrochemical approach expands the possible range of both etching techniques and resulting MXene compositions.
335 citations
TL;DR: Hf3C2Tz MXenes with a 2D structure are candidate anode materials for metal-ion intercalation, especially for applications where size matter, and are determined to be flexible and conductive.
Abstract: We demonstrate fabrication of a two-dimensional Hf-containing MXene, Hf3C2Tz, by selective etching of a layered parent Hf3[Al(Si)]4C6 compound. A substitutional solution of Si on Al sites effectively weakened the interfacial adhesion between Hf–C and Al(Si)–C sublayers within the unit cell of the parent compound, facilitating the subsequent selective etching. The underlying mechanism of the Si-alloying-facilitated etching process is thoroughly studied by first-principles density functional calculations. The result showed that more valence electrons of Si than Al weaken the adhesive energy of the etching interface. The MXenes were determined to be flexible and conductive. Moreover, this 2D Hf-containing MXene material showed reversible volumetric capacities of 1567 and 504 mAh cm–3 for lithium and sodium ions batteries, respectively, at a current density of 200 mAg–1 after 200 cycles. Thus, Hf3C2Tz MXenes with a 2D structure are candidate anode materials for metal-ion intercalation, especially for applicat...
315 citations
TL;DR: These results represent the best performance ever reported in the literature for SOI structures without the use of any back-reflector.
Abstract: We present a simple and practical strategy that allows to design high-efficiency grating couplers. The technique is based on the simultaneous apodization of two structural parameters: the grating period and the fill-factor, along with the optimization of the grating coupler etching depth. Considering a 260 nm Si-thick Silicon-on-insulator platform, we numerically demonstrated a coupling efficiency of −0.8 dB (83%), well matching the experimental value of −0.9 dB (81%). Thanks to the optimized design, these results represent the best performance ever reported in the literature for SOI structures without the use of any back-reflector.
142 citations
TL;DR: In this article, a mask-free micro-plasma-jet etching was used to etch carbon nanotubes (MWNTs) for all-solid-state flexible micro-supercapacitors.
123 citations
TL;DR: In this article, an innovative recycling process to recover silicon (Si) wafer from solar panels was described, and Pb-free solar panels were fabricated with the solar cells by using 60Sn-38Bi-2Ag solder to assemble the solar panels.
116 citations
TL;DR: In this article, the morphological and textural evolution of core-shell Fe3O4@polypyrrole (PPy) composites were investigated by scanning and transmission electron microscope.
Abstract: Core–shell Fe3O4@polypyrrole (PPy) composites with excellent electromagnetic wave absorption properties have been prepared by a sequential process of etching, polymerization, and replication. Templating from pre-prepared Fe3O4 microspheres, ferric ions were released from the skin layer of the microspheres by acid etching and initiated the oxidative polymerization of pyrrole in suit. The morphological and textural evolution of core–shell Fe3O4@PPy composites depending on etching time was investigated by scanning and transmission electron microscope. A maximum reflection loss of as much as −41.9 dB (>99.99% absorption) at 13.3 GHz with a matching layer thickness of 2.0 mm was achieved when the etching time was 5 min. In comparison with other conductive polymer-based core–shell composites reported previously, the Fe3O4@PPy composites in this study not only possess better reflection loss performance but also demonstrate a wider effective absorption bandwidth (<−10.0 dB) over the entire Ku band (12.0–18.0 GHz)...
116 citations
TL;DR: In this paper, a vertical grating coupler with high directionality and low back-reflection was realized using a blazed subwavelength structure, and the measured maximum coupling efficiencies with a standard single-mfiber were −1.5 dB and −2.2 dB for apodized and periodic structures, respectively.
Abstract: Silicon photonic grating couplers are demonstrated featuring a perfect vertical coupling and predicted coupling efficiencies of 87% and 78% with an apodized and a standard periodic structure, respectively. Vertical coupling is usually difficult to be achieved with standard diffraction gratings, since both the forward and backward scattered light meet the Bragg condition alike. In this work a vertical grating coupler which satisfies both high directionality (> 97%) and low back-reflection (< 1%) simultaneously is realized using a blazed sub-wavelength structure. The measured maximum coupling efficiencies with a standard single-mfiber are −1.5 dB and −2.2 dB for apodized and periodic structures, respectively. The suggested structure offers an ultimate solution for compact coupling schemes in Si photonics, since it meets the most important needs of grating couplers, which are directionality, ease of fabrication, and a possibility to vertically couple. The vertical grating coupler are fabricated on a silicon-on-insulator wafer with a 220 nm-thick silicon layer, relying only on a 2-step etching technology.
98 citations
TL;DR: An ultrasensitive platform for microRNA 141 (miR-141) detection based on a silver coated gold nanorods (Au@Ag NRs) etching process accompanied by surface plasmon resonance (SPR) shift is developed and may have great potential in trace bioanalysis for clinical applications.
Abstract: Quantification of trace serum circulate microRNAs is extremely important in clinical diagnosis but remains a great challenge. Herein we developed an ultrasensitive platform for microRNA 141 (miR-141) detection based on a silver coated gold nanorods (Au@Ag NRs) etching process accompanied by surface plasmon resonance (SPR) shift. Both SPR absorption and scattering responses were monitored. Combined amplification cascades of catalyzed hairpin assembly (CHA) and hybridization chain reaction (HCR) with the sensitive SPR responses of plasmonic Au@Ag NRs, the proposed bioassay exhibited ultrahigh sensitivity toward miRNA-141 with dynamic range from 5.0 × 10–17 M to 1.0 × 10–11 M. With target concentration higher than 1.0 × 10–13 M, the color of the solution changed obviously that could be observed with naked eyes. Under dark-field microscopy observation of individual particle, a limit of detection down to 50 aM could be achieved. Owing to the superior sensitivity and selectivity, the proposed method was applied...
94 citations
TL;DR: In this paper, the optimal laser parameters to enable high selective laser-induced etching were investigated, and the scaling of the writing velocity was investigated, showing that faster writing speed results in higher selectivity and thus higher precision of the resulting structures.
Abstract: By modification of glasses with ultrafast laser radiation and subsequent wet-chemical etching (here named SLE = selective laser-induced etching), precise 3D structures have been produced, especially in quartz glass (fused silica), for more than a decade. By the combination of a three-axis system to move the glass sample and a fast 3D system to move the laser focus, the SLE process is now suitable to produce more complex structures in a shorter time. Here we present investigations which enabled the new possibilities. We started with investigations of the optimum laser parameters to enable high selective laser-induced etching: surprisingly, not the shortest pulse duration is best suited for the SLE process. Secondly we investigated the scaling of the writing velocity: a faster writing speed results in higher selectivity and thus higher precision of the resulting structures, so the SLE process is now even suitable for the mass production of 3D structures. Finally we programmed a printer driver for commercial CAD software enabling the automated production of complex 3D glass parts as new examples for lab-on-a-chip applications such as nested nozzles, connectors and a cell-sorting structure.
91 citations
TL;DR: A deep understanding of the mechanism for the yolk-shell nanostructure during the Li-alloying process is revealed by in situ transmission electron microscopy and finite element simulation.
Abstract: Designing yolk–shell nanostructures is an effective way of addressing the huge volume expansion issue for large-capacity anode and cathode materials in Li-ion batteries (LIBs). Previous studies mainly focused on adopting a SiO2 template through HF etching to create yolk–shell nanostructures. However, HF etching is highly corrosive and may result in a significant reduction of Si content in the composite. Herein, a silkworm cocoon-like silicon-based composite is prepared through a green approach in which Al2O3 was selected as a sacrificial template. The void space between the outer nitrogen-doped carbon (NC) shell formed by chemical vapor deposition using a pyridine precursor and the inside porous silicon nanorods (p-Si NRs) synthesized by magnesiothermic reduction of ordered mesoporous silica nanorods can be generated by etching Al2O3 with diluted HCl. The obtained p-Si NRs@void@NC composite is utilized as an anode material for LIBs, which exhibits a large initial discharge capacity of 3161 mAh g–1 at 0.5 ...
Patent•
27 Jul 2017TL;DR: In this article, a contact etching stop layer (CESL) is used for non-volatile memory (NVM) cells with a logic transistor and a nonvolatile NVM cell.
Abstract: A semiconductor device including a logic transistor, a non-volatile memory (NVM) cell and a contact etching stop layer (CESL) is shown. The CESL includes a first silicon nitride layer on the logic transistor but not on the NVM cell, a silicon oxide layer on the first silicon nitride layer and on the NVM cell, and a second silicon nitride layer disposed on the silicon oxide layer over the logic transistor and disposed on the silicon oxide layer on the NVM cell.
TL;DR: In this paper, the authors proposed to use GaN-on-SOI (silicon-oninsulator) to isolate the devices by trench etching through the GaN/Si(111) layers and stopping in the SiO2 buried layer.
Abstract: Monolithic integration of a half bridge on the same GaN-on-Si wafer is very challenging because the devices share a common conductive Si substrate In this letter, we propose to use GaN-on-SOI (silicon-on-insulator) to isolate the devices by trench etching through the GaN/Si(111) layers and stopping in the SiO2 buried layer By well-controlled epitaxy and device fabrication, high-performance 200 V enhancement-mode (e-mode) p-GaN high electron mobility transistors with a gate width of 36 mm are achieved This letter demonstrates that by using GaN-on-SOI in combination with trench isolation, it is very promising to monolithically integrate GaN power systems on the same wafer to reduce the parasitic inductance and die size
TL;DR: In this article, the authors investigated the ability of a heated tungsten filament to catalytically crack molecular hydrogen or ammonia into atomic hydrogen and nitrogen-containing radicals and their successful delivery to the wafer (substrate) surface are experimentally confirmed by dedicated tellurium-etching and silicon-nitridation experiments.
Abstract: Hot-wire assisted atomic layer deposition (HWALD) is a novel energy-enhancement technique. HWALD enables formation of reactive species (radicals) at low substrate temperatures, without the generation of energetic ions and UV photons as by plasma. This approach employs a hot wire (tungsten filament) that is heated up to a temperature in the range of 1300–2000 °C to dissociate precursor molecules. HWALD has the potential to overcome certain limitations of plasma-assisted processes. This work investigates the ability of a heated tungsten filament to catalytically crack molecular hydrogen or ammonia into atomic hydrogen and nitrogen-containing radicals. The generation of these radicals and their successful delivery to the wafer (substrate) surface are experimentally confirmed by dedicated tellurium-etching and silicon-nitridation experiments. It further reports on deposition of low-resistivity oxygen-free tungsten films by using HWALD, as well as on the effect of hot-wire-generated nitrogen radicals and atomic hydrogen in deposition of aluminum nitride and boron nitride films. In parallel, this work provides important illustrative examples of using in situ real-time monitoring of deposition and etching processes, together with extracting a variety of film properties, by spectroscopic ellipsometry technique.
TL;DR: This novel, simple, visual and label-free method for telomerase detection by using enzymatic etching of gold nanorods (GNRs) was considerably suitable for point-of-care diagnostics in resource-constrained regions because of the easy readout of results without the use of sophisticated apparatus.
Abstract: Early diagnosis and life-long surveillance are clinically important to improve the long-term survival of cancer patients. Telomerase activity is a valuable biomarker for cancer diagnosis, but its measurement often used complex label procedures. Herein, we designed a novel, simple, visual and label-free method for telomerase detection by using enzymatic etching of gold nanorods (GNRs). First, repeating (TTAGGG)x sequences were extented on telomerase substrate (TS) primer. It formed G-quadruplex under the help of Hemin and K+. Second, the obtained horseradish peroxidase mimicking hemin/G-quadruplex catalyzed the H2O2-mediated etching of GNRs to the short GNRs, even to gold nanoparticles (GNPs), generating a series of distinct color changes due to their plasmon-related optical response. Thus, this enzymatic reaction can be easily coupled to telomerase activity, allowing for the detection of telomerase activity based on vivid colors. This can be differentiated sensitively by naked eyes because human eyes are ...
TL;DR: The ALE technique shows that a monolayer MoS2 field effect transistor (FET) fabricated after one cycle of ALE is undamaged and exhibits electrical characteristics similar to those of a pristine MonS2 FET.
Abstract: Among the layered transition metal dichalcogenides (TMDs) that can form stable two-dimensional crystal structures, molybdenum disulfide (MoS2) has been intensively investigated because of its unique properties in various electronic and optoelectronic applications with different band gap energies from 1.29 to 1.9 eV as the number of layers decreases. To control the MoS2 layers, atomic layer etching (ALE) (which is a cyclic etching consisting of a radical-adsorption step such as Cl adsorption and a reacted-compound-desorption step via a low-energy Ar+-ion exposure) can be a highly effective technique to avoid inducing damage and contamination that occur during the reactive steps. Whereas graphene is composed of one-atom-thick layers, MoS2 is composed of three-atom-thick S(top)—Mo(mid)—S(bottom) layers; therefore, the ALE mechanisms of the two structures are significantly different. In this study, for MoS2 ALE, the Cl radical is used as the adsorption species and a low-energy Ar+ ion is used as the desorptio...
TL;DR: A novel manufacturing method that may overcome the complexity of hollow microneedle fabrication is reported that involves direct printing from computer-aided design (CAD) drawing without the constraints imposed by subtractive machining or etching processes.
Abstract: Development of microneedles for unskilled and painless collection of blood or drug delivery addresses the quality of healthcare through early intervention at point-of-care. Microneedles with submicron to millimeter features have been fabricated from materials such as metals, silicon, and polymers by subtractive machining or etching. However, to date, large-scale manufacture of hollow microneedles has been limited by the cost and complexity of microfabrication techniques. This paper reports a novel manufacturing method that may overcome the complexity of hollow microneedle fabrication. Prototype microneedles with open microfluidic channels are fabricated by laser stereolithography. Thermoplastic replicas are manufactured from these templates by soft-embossing with high fidelity at submicron resolution. The manufacturing advantages are (a) direct printing from computer-aided design (CAD) drawing without the constraints imposed by subtractive machining or etching processes, (b) high-fidelity replication of prototype geometries with multiple reuses of elastomeric molds, (c) shorter manufacturing time compared to three-dimensional stereolithography, and (d) integration of microneedles with open-channel microfluidics. Future work will address development of open-channel microfluidics for drug delivery, fluid sampling and analysis.
TL;DR: It is demonstrated that the absence of microstructures has therefore a positive impact on the coalescence-induced droplet-jumping of micrometer droplets for antifogging, anti-icing, and condensation heat transfer applications.
Abstract: Superhydrophobic surfaces are receiving increasing attention due to the enhanced condensation heat transfer, self-cleaning, and anti-icing properties by easing droplet self-removal. Despite the extensive research carried out on this topic, the presence or absence of microstructures on droplet adhesion during condensation has not been fully addressed yet. In this work we, therefore, study the condensation behavior on engineered superhydrophobic copper oxide surfaces with different structural finishes. More specifically, we investigate the coalescence-induced droplet-jumping performance on superhydrophobic surfaces with structures varying from the micro- to the nanoscale. The different structural roughness is possible due to the specific etching parameters adopted during the facile low-cost dual-scale fabrication process. A custom-built optical microscopy setup inside a temperature and relative humidity controlled environmental chamber was used for the experimental observations. By varying the structural ro...
TL;DR: In this article, solid silicon (Si) microneedles with a higher aspect ratio and sharper tips are fabricated and the needles are found to be suitable for transdermal drug delivery applications.
Abstract: In this work, solid silicon (Si) microneedles with a higher aspect ratio and sharper tips are fabricated. Tetramethylammonium Hydroxide (TMAH) etching factors have been optimized and used to fabricate long and tapered microneedles. The needles thus fabricated are found to be suitable for transdermal drug delivery applications. The optimized etching factors include varying the concentration of TMAH, etching time, etching rates, temperature, and window size of optical mask. It is found that by increasing the window size, the etch rates in both vertical and lateral directions increase extensively. However, on increasing the temperature beyond 90 °C, etching becomes rapid and uncontrollable. In order to obtain microneedles with high aspect ratio, sample placement in the glass boat of TMAH setup and TMAH concentration should be manipulated to attain a higher etch rate in vertical direction compared to the lateral one. Solid silicon microneedles with an average height of 158 μm, base width of 110.5 μm, aspect ratio of 1.43, tip angle of 19.4° and tip diameter of 0.40 μm are successfully fabricated. A microhardness value of 44.4 (HRC) was obtained for the fabricated Si microneedles. This is 52.2 times higher than the skin Ultimate Tensile Strength (UTS), which makes insertion of microneedles through the skin safer and easier without any breakage.
TL;DR: Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(BrxI1-x)3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability.
Abstract: In recent years, there has been an unprecedented rise in the research of halide perovskites because of their important optoelectronic applications, including photovoltaic cells, light-emitting diodes, photodetectors and lasers. The most pressing question concerns the stability of these materials. Here faster degradation and PL quenching are observed at higher iodine content for mixed-halide perovskite CsPb(BrxI1−x)3 nanocrystals, and a simple yet effective method is reported to significantly enhance their stability. After selective etching with acetone, surface iodine is partially etched away to form a bromine-rich surface passivation layer on mixed-halide perovskite nanocrystals. This passivation layer remarkably stabilizes the nanocrystals, making their PL intensity improved by almost three orders of magnitude. It is expected that a similar passivation layer can also be applied to various other kinds of perovskite materials with poor stability issues.
TL;DR: A colorimetric method for fast, simple, and selective detection of Cu2+ was developed using I--mediated etching of triangular gold nanoplates (AuNPLs) based on the finding thatCu2+ efficiently promoted this etching in the presence of SCN-.
Abstract: A colorimetric method for fast, simple, and selective detection of Cu2+ was developed using I–-mediated etching of triangular gold nanoplates (AuNPLs). The method was based on our finding that Cu2+ efficiently promoted this etching in the presence of SCN–. The etching process was accompanied by a dramatic color change from blue to red, allowing for visual and spectroscopic detection of Cu2+ with detection limits of 10 and 1 μM, respectively. When molecular recognition by a DNA aptamer was incorporated into this method, visual detection of chloramphenicol was also achieved with a detection limit of 5 μM.
TL;DR: Substantial microstructural changes, such as Dark Etching Region (DER), White Etching Bands (WEBs) and White etching Cracks (WECs), can occur in typical bearing steels such as AISI 52100 and 4320 due to Rolling Contact Fatigue (RCF) as discussed by the authors.
TL;DR: In this paper, polydimethylsiloxane (PDMS) films with smooth and micro pillar arrays on the surface were prepared respectively, and the surfaces were treated by argon plasma before testing their output performance.
TL;DR: In this paper, high quality InGaAs layers are grown on standard 001-silicon substrates using a selective growth process compatible with integration, and a distributed feedback laser operation at a single wavelength with strong suppression of side modes was demonstrated.
Abstract: Several approaches for growing III–V lasers on silicon were recently demonstrated. Most are not compatible with further integration, however, and rely on thick buffer layers and require special substrates. Recently, we demonstrated a novel approach for growing high quality InP without buffer on standard 001-silicon substrates using a selective growth process compatible with integration. Here we show high quality InGaAs layers can be grown on these InP-templates. High-resolution TEM analysis shows these layers are free of optically active defects. Contrary to InP, the InGaAs material exhibits strong photoluminescence for wavelengths relevant for integration with silicon photonics integrated circuits. Distributed feedback lasers were defined by etching a first order grating in the top surface of the device. Clear laser operation at a single wavelength with strong suppression of side modes was demonstrated. Compared to the previously demonstrated InP lasers 65% threshold reduction is observed. Demonstration ...
TL;DR: This work designs and fabricated GaN NW array-based vertical field-effect transistors with wrap-gated structure with potential applications in next-generation power switches and high-temperature digital circuits and proposes a model concerning surface bonding configuration on crystallography facets to understand the anisotropic wet etching mechanism.
Abstract: Vertically aligned gallium nitride (GaN) nanowire (NW) arrays have attracted a lot of attention because of their potential for novel devices in the fields of optoelectronics and nanoelectronics. In this work, GaN NW arrays have been designed and fabricated by combining suitable nanomachining processes including dry and wet etching. After inductively coupled plasma dry reactive ion etching, the GaN NWs are subsequently treated in wet chemical etching using AZ400K developer (i.e., with an activation energy of 0.69 ± 0.02 eV and a Cr mask) to form hexagonal and smooth a-plane sidewalls. Etching experiments using potassium hydroxide (KOH) water solution reveal that the sidewall orientation preference depends on etchant concentration. A model concerning surface bonding configuration on crystallography facets has been proposed to understand the anisotropic wet etching mechanism. Finally, NW array-based vertical field-effect transistors with wrap-gated structure have been fabricated. A device composed of 99 NWs exhibits enhancement mode operation with a threshold voltage of 1.5 V, a superior electrostatic control, and a high current output of >10 mA, which prevail potential applications in next-generation power switches and high-temperature digital circuits.
TL;DR: In this article, the authors used as-sliced Al2O3 single crystals and investigated the chemical state on various surfaces of the single crystal with a high-resolution X-ray photoelectron spectroscopy (XPS).
09 May 2017
TL;DR: In this paper, the authors used reactive ion beam angled etching to fabricate optical resonators in bulk polycrystalline and single crystal diamond with reported quality factors of approximately 30,000 and 286,000, respectively.
Abstract: Freestanding nanostructures play an important role in optical and mechanical devices for classical and quantum applications. Here, we use reactive ion beam angled etching to fabricate optical resonators in bulk polycrystalline and single crystal diamond. Reported quality factors are approximately 30 000 and 286 000, respectively. The devices show uniformity across 25 mm samples, a significant improvement over comparable techniques yielding freestanding nanostructures.
TL;DR: This growth-etching-regrowth study provides not only guidance to understand the growth mechanisms of 2D binary crystals but also a potential method for the synthesis of large, shape-controllable, high-quality single-crystalline 2D crystals and their lateral heterostructures.
Abstract: Understanding the atomistic mechanisms governing the growth of two-dimensional (2D) materials is of great importance in guiding the synthesis of wafer-sized, single-crystalline, high-quality 2D crystals and heterostructures. Etching, in many cases regarded as the reverse process of material growth, has been used to study the growth kinetics of graphene. In this work, we explore a growth–etching–regrowth process of monolayer GaSe crystals, including single-crystalline triangles and irregularly shaped domains formed by merged triangles. We show that the etching begins at a slow rate, creating triangular, truncated triangular, or hexagonally shaped holes that eventually evolve to exclusively triangles that are rotated 60° with respect to the crystalline orientation of the monolayer triangular crystals. The regrowth occurs much faster than etching, reversibly filling the etched holes and then enlarging the size of the monolayer crystals. A theoretical model developed based on kinetic Wulff construction (KWC) ...
TL;DR: The thermal atomic layer etching (ALE) of TiN was demonstrated using a new etching mechanism based on sequential, self-limiting oxidation and fluorination reactions as discussed by the authors, where the oxidant was either O3 or H2O2, and the fluorination reactant was hydrogen fluoride (HF) derived from HF-pyridine.
Abstract: The thermal atomic layer etching (ALE) of TiN was demonstrated using a new etching mechanism based on sequential, self-limiting oxidation and fluorination reactions. The oxidation reactant was either O3 or H2O2, and the fluorination reactant was hydrogen fluoride (HF) derived from HF-pyridine. In the proposed reaction mechanism, the O3 reaction oxidizes the surface of the TiN substrate to a TiO2 layer and gaseous NO. HF exposure to the TiO2 layer then produces TiF4 and H2O as volatile reaction products. The overall reaction can be written as TiN + 3O3 + 4HF → TiF4 + 3O2 + NO + 2H2O. Quartz crystal microbalance studies showed that HF can spontaneously etch TiO2 films. Spectroscopic ellipsometry and X-ray reflectivity analysis showed that TiN films were etched linearly versus the number of ALE cycles using O3 and HF as the reactants. The TiN etching also occurred selectively in the presence of Al2O3, HfO2, ZrO2, SiO2, and Si3N4. The etch rate for TiN ALE was determined at temperatures from 150 to 350 °C. Th...