Etching (microfabrication)

About: Etching (microfabrication) is a research topic. Over the lifetime, 85711 publications have been published within this topic receiving 890723 citations. The topic is also known as: etching (microfabrication).

Method of dry etching oxide semiconductor film

Abstract: Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

Thin film etching method

Abstract: Example methods may provide a thin film etching method. Example thin film etching methods may include forming a Ga—In—Zn—O film on a substrate, forming a mask layer covering a portion of the Ga—In—Zn—O film, and etching the Ga—In—Zn—O film using the mask layer as an etch barrier, wherein an etching gas used in the etching includes chlorine. The etching gas may further include an alkane (CnH2n+2) and H2 gas. The chlorine gas may be, for example, Cl2, BCl3, and/or CCl3, and the alkane gas may be, for example, CH4.

Dry etching method for oxide semiconductor film

Abstract: Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

Metal-assisted chemical etching in HF/H2O2 produces porous silicon

Abstract: A simple and effective method is presented for producing light-emitting porous silicon (PSi) A thin (d<10 nm) layer of Au, Pt, or Au/Pd is deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2 Depending on the type of metal deposited and Si doping type and doping level, PSi with different morphologies and light-emitting properties is produced PSi production occurs on the time scale of seconds, without electrical current, in the dark, on both p- and n-type Si Thin metal coatings facilitate the etching in HF and H2O2, and of the metals investigated, Pt yields the fastest etch rates and produces PSi with the most intense luminescence A reaction scheme involving local coupling of redox reactions with the metal is proposed to explain the metal-assisted etching process The observation that some metal remains on the PSi surface after etching raises the possibility of fabricating in situ PSi contacts

Method of anisotropically etching silicon

Abstract: A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material from the surface of the silicon and provide exposed surfaces; polymerizing in a polymerizing step at least one polymer former contained in the plasma onto the surface of the silicon during which the surfaces that were exposed in a preceding etching step are covered by a polymer layer thereby forming a temporary etching stop; and alternatingly repeating the etching step and the polymerizing step. The method provides a high mask selectivity simultaneous with a very high anisotropy of the etched structures.