Showing papers on "Evaporation (deposition) published in 1973"
TL;DR: In this paper, the electrical properties of vacuum evaporated layers of CdS on amorphous substrates have been investigated as a function of various preparative parameters, i.e., evaporation rate, substrate temperature, thickness of the layers and purity of the source.
72 citations
TL;DR: In this paper, the capability of the electron beam evaporation technique for producing thin W films having properties suitable for application as first-level metallization in refractory MOS (RMOS) devices was investigated.
Abstract: We have investigated the capability of the electron beam evaporation technique for producing thin W films having properties suitable for application as first-level metallization in refractory MOS (RMOS) devices. The apparatus consisted of a sputter-ion pumped 18-in. diam UHV station, 6-kW e gun, and a quartz crystal rate monitor. The evaporation process employs low background pressures (1−3×10−7 Torr), substrate heating (200–700 °C), a preevaporation step, and evaporation at rates of 100–500 A/min. Maximum throughput is 16 1(14)-in. diam silicon slices per run. Using substrate temperatures of 500–700 °C, we have been able to produce mechanically stable, adherent films having a resistivity of 7–8 μΩ cm and a sheet resistance of ∼ 0.08 Ω/□ (for 9000-A film). “Cold”-deposited films (> 1000 A thick) having a high resistivity of 40–50 μΩ cm can be annealed at 1000 °C to resistivity of 10–15 μΩ cm. The films are single-phase bcc W with a small grain size of 0.1–0.2 μ. Low resistivity films (deposited above 550 °C) are associated with a large degree of microstructural perfection, and have small tensile stresses (3−7×109dyn cm−2). The films possess, excellent high-resolution etchability, and were found to be compatible with MOS structures provided care is exercised during the deposition.
43 citations
TL;DR: In this article, the application of the typical metallic refractory compound lanthanum hexaboride as a thin-film material has been studied and the effective optical constants of the films are derived by means of a computer program and used together with the modified Drude theory to give the free electron relaxation time.
Abstract: The application of the typical metallic refractory compound lanthanum hexaboride as a thin‐film material has been studied. Film properties are estimated by using bulk optical constants derived from a Kramers‐Kronig analysis of the bulk material. Films with thicknesses of 130–2000 A have been prepared by sputtering and electron‐beam evaporation onto substrates with temperatures between 100 and 1200 °C. The effective optical constants of the films are derived by means of a computer program and used together with the modified Drude theory to give the free‐electron relaxation time. Conductivity measurements give the electron mean free path. The optical and electrical film data are compared with the bulk properties of the material. The observed differences can be explained by the influence of crystal imperfections. The explanation is in qualitative agreement with information from x‐ray diffractometer scans.
33 citations
TL;DR: In this paper, the complete compositional range of the amorphous SbSe system has been prepared in thin-film form by a simple evaporation technique, and optical and transport properties have been measured as a function of composition.
Abstract: Essentially the complete compositional range of the amorphous SbSe system has been prepared in thin-film form by a simple evaporation technique. Optical and transport properties have been measured as a function of composition.
31 citations
TL;DR: In this paper, the dependence of the optical properties on metal particle size and metal-to-insulator volume ratio was measured and qualitatively understood in terms of the Maxwell-Garnett theory.
Abstract: By successive evaporation of metal and dielectric we have made films consisting of many layers of small metal particles insulated from each other. Such films are opaque in the visible and near infrared, but electrically insulating. We have measured the dependence of the optical properties on metal particle size and metal‐to‐insulator volume ratio. The results can be qualitatively understood in terms of the Maxwell‐Garnett theory. Possible technical applications are discussed.
30 citations
TL;DR: In this article, gallium atoms in the pseudomorphic state are anomalously strongly bound to the substrate tungsten or are field evaporated as the doubly ionized ions.
Abstract: Gallium was deposited on a tip specimen of a field ion microscope by making contact in vacuum. Gallium deposited on a tip area and diffused from the tip shank at 350 to 500 °K was crystallized in the pseudomorphic structure on tungsten. The number of atomic layers of the pseudomorphic gallium was 2 to 3. The sharp helium image of the pseudomorphic gallium appeared at a voltage considerably lower than the helium best‐image voltage for tungsten. The observed high evaporation field of the pseudomorphic gallium, 3.0–4.5 V/A, may indicate that the gallium atoms in the pseudomorphic state are anomalously strongly bound to the substrate tungsten or are field evaporated as the doubly‐ionized ions. Various superstructures were observed on the {112} areas after heating above 900 °K, but their detailed structures did not depend upon temperature or heating time. An unidentified underlayer may play a dominant role in determining the structure of the superstructures. No clear evidence of alloy formation was noticed in the temperature range 21 to 1500 °K.
23 citations
TL;DR: In this paper, a study of thin electron-beam-evaporated yttrium oxide films was made and the oxide structure was found to be polycrystalline with grain sizes of the order of 100 A, by electron microscopy.
Abstract: A study has been made of thin electron‐beam‐evaporated yttrium oxide films. The oxide structure was found to be polycrystalline, with grain sizes of the order of 100 A, by electron microscopy. dc conduction measurements were made and a Frenkel‐type of conduction mechanism was proposed. Step response and bridge dielectric loss measurements were compared. Internal photoemission was used to obtain metal/oxide barrier heights of 3.14 and 3.72 eV in an Al‐Y2O3‐Al structure.
23 citations
TL;DR: In this paper, the microstructure and thickness of multilayer anodic films on both iridium and platinum specimens were examined using field-ion microscopy, and the oxide/metal interface was revealed by controlled field evaporation and was shown to be quite discrete.
19 citations
TL;DR: In this paper, a method for making cadmium-sulphide photovoltaic (CdS) junctions based on polycrystalline semiconductor layers of Cadmium sulphide deposited by a silk-screening technique has been developed.
Abstract: Methods for making cadmium-sulphide photovoltaic junctions which are based on polycrystalline semiconductor layers of cadmium sulphide deposited by a silk-screening technique have been developed, and some experimental results on their electrical characteristics are reported. The methods employed in the preparation of these junctions avoid the difficulties involved in producing large-area CdS solar cells by evaporation in vacuum.
19 citations
TL;DR: In this paper, the authors describe how well-characterized films of Bi2O3 were formed by the evaporation of metallic bismuth in an oxygen ambient and formulate thermodynamic criteria of stability.
18 citations
TL;DR: In this paper, single crystal MgO films of desired orientation were deposited by high vacuum evaporation on epitaxially grown LiF substrates and examined by TEM.
TL;DR: In this article, the radial distribution functions (RDF) of evaporated As2S3, As2Se3, and As2Te3 were investigated and the appearance of an additional peak in the RDF was observed in the vitreous form and disappears when annealed in the vicinity of the glass transition temperature.
Abstract: It is not widely realized that the structure of evaporated films differs significantly from the structure of vitreous bulk specimens. The atomic arrangement of vitreous specimens retains the short range order of the liquid from which they were prepared, whereas evaporated films are built up by the individual arrival of molecules and hence are inherently more random. The composition of these molecules depends on the composition of the evaporant and the evaporation conditions. Inspection of the radial distribution functions (RDF) of evaporated As2S3, As2Se3, and As2Te3 show consistently the appearance of an additional peak in the RDF of evaporated films. The peak is absent in the vitreous form and disappears when evaporated films are annealed in the vicinity of the glass transition temperature. These structural differences are reflected in the electronic properties of evaporated and vitreous samples.
01 Jan 1973
TL;DR: In this paper, the currentvoltage characteristics of aluminum-embedded aluminum oxide thin films with Al or Au electrodes, between 150-1000 A in thickness, prepared by thermic evaporation of pure aluminum in partial air pressure are studied.
Abstract: Current‐voltage characteristics of aluminum‐embedded aluminum oxide thin films with Al or Au electrodes, between 150–1000 A in thickness, prepared by thermic evaporation of pure aluminum in partial air pressure are studied I‐V characteristics of these films showed metallic conductivity, switching, and memory effects different than those observed in amorphous materials, and metal‐oxide‐metal diode characteristics as the amount of metallic aluminum within the oxide is decreased in respective samples The switching and memory effects are found to be independent of oxide thickness and electrode material
TL;DR: In this article, the currentvoltage characteristics of aluminum-embedded aluminum oxide thin films with Al or Au electrodes, between 150-1000 A in thickness, prepared by thermic evaporation of pure aluminum in partial air pressure are studied.
Abstract: Current‐voltage characteristics of aluminum‐embedded aluminum oxide thin films with Al or Au electrodes, between 150–1000 A in thickness, prepared by thermic evaporation of pure aluminum in partial air pressure are studied. I‐V characteristics of these films showed metallic conductivity, switching, and memory effects different than those observed in amorphous materials, and metal‐oxide‐metal diode characteristics as the amount of metallic aluminum within the oxide is decreased in respective samples. The switching and memory effects are found to be independent of oxide thickness and electrode material.
TL;DR: Reflection electron diffraction studies have been made of obliquely deposited CdS films as mentioned in this paper, where the films were produced by electron bombardment evaporation on polished corundum single-crystal substrates at room temperature.
Patent•
30 Jul 1973
TL;DR: A glass material having a memory or threshold switching effect which consists of 14.0 - 35.0 atomic % Ge, 20.0 − 30.5 atomic % As, 5.0−25.5 - 55.0atomic % Te is a glass material suitable for making thin films by a conventional direct evaporation method as discussed by the authors.
Abstract: A glass material having a memory or threshold switching effect which consists of 14.0 - 35.0 atomic % Ge, 20.0 - 30.0 atomic % As, 5.0 - 25.0 atomic % Se and 25.0 - 55.0 atomic % Te. This material is suitable for making thin films by a conventional direct evaporation method.
TL;DR: In this paper, Ni and Co have been grown on the surface of phosphorus doped n -type silicon by evaporation in high vacuum, and polycrystalline films resulted for all substrate temperatures except in the range 250° to approximately 400°C when f.c.
01 Jan 1973
TL;DR: The initial stages of sintering have been studied by transmission electron microscopy as mentioned in this paper, where single crystal disks 10 to 20 microns in diameter and thin enough for electron transmission were produced by ion etching suitably masked silver films grown epitaxially on sodium chloride.
Abstract: The initial stages of sintering have been studied by transmission electron microscopy. Single crystal disks 10 to 20 microns in diameter and thin enough for electron transmission were produced by ion etching suitably masked silver films grown epitaxially on sodium chloride. The disks, as-fabricated are in edge contact and model the geometry present in the early stages of sintering. Because heating of uncontaminated arrays in the high vacuum of the microscope specimen chamber resulted in severe evaporation, sintering was carried out in a static hydrogen atmosphere where material loss can be kept to a minimum. Electron microscopy of the neck regions between disks before and after heating shows that a build up of dislocation structure has occurred during sintering. This is taken as direct proof that dislocations are generated by surface tension forces early in the sintering process.
TL;DR: In this article, an experimental investigation was made of the damage of thin metal films by laser radiation and it was found that the evaporation was the main mechanism of the formation of holes in films by short (of the order of 10-8 sec) laser pulses.
Abstract: An experimental investigation was made of the damage of thin metal films by laser radiation. It was found that the evaporation was the main mechanism of the formation of holes in films by short (of the order of 10–8 sec) laser pulses. A detailed comparison of the experimental results with the main consequences of the evaporation model demonstrated a good quantitative agreement between them.
TL;DR: In this article, the light output of an argonion laser was focused onto a thin film of gold deposited on a glass substrate, and the damage to the substrate surface was observed for power levels as low as 01 W and for intensities of less than 5 kW cm−2.
Abstract: Experiments have been performed in which the light output of an argonion laser was focused onto a thin film of gold deposited on a glass substrate. In addition to evaporation of the gold film, damage to the substrate surface has been observed for power levels as low as 01 W and for intensities of less than 5 kW cm−2. The nature and extent of the damage have been found to vary dramatically with the illumination conditions and film thickness.
TL;DR: In this article, a computer-controlled scanning electron microscope (CCSEM) was used for fabrication and inspection of two-dimensional lattice structures in thin polymer films, which can be useful in integrated optics and may be used as x-ray lithography or evaporation masks.
Abstract: Fabrication and inspection of two-dimensional lattice structures in thin polymer films have been carried out using a computer-controlled scanning electron microscope (CCSEM). Periods of 0.2 μ are quite regular, finer resolutions show some irregularities possibly due to film instabilities. Using the CCSEM permits great flexibility, and using thin films eliminates the problem of backscattered electrons from the substrate, which severely limits the resolution of periodic structures fabricated on a solid substrate. These structures should be useful in integrated optics, and may be used as x-ray lithography or evaporation masks.
TL;DR: In this paper, the sensitivity and resolving power of thin-film metal arrays are estimated theoretically and measured experimentally for information stored by the evaporation of a metal film by laser radiation.
Abstract: The sensitivity and resolving power are estimated theoretically and measured experimentally for thin-film metal arrays in which information is stored by the evaporation of a metal film by laser radiation The maximum sensitivity, resolving power, and write time are estimated
TL;DR: In this article, an electrodeposition technique for the preparation of thin and uniform Pa-layers from organic solvents is described, and the influences of solants, electrode materials and applied high voltages on the deposition yield and the quality of the Pa-layer are investigated.
TL;DR: In this paper, the usual procedures and equations relating to low vapour pressures and evaporation under high vacuum conditions are amplified and extended to include vapour diffusion through a gas.
TL;DR: In this paper, the thickness uniformity of evaporation systems with long source-to-substrate distances and small area sources has been investigated using multiple beam interferometry, and random thickness variations were found on all the films, which are much larger than the uniform thickness gradations predicted by the geometric theory.
Abstract: The thickness uniformity that can be obtained near the source axis in evaporation systems having long source-to-substrate distances (~50 cm) and small area sources has been investigated using multiple beam interferometry. Silver films were evaporated from resistance-heated dimple boats in standard vacuum and ultrahigh vacuum onto stationary and rotating substrates 3.86 cm in diameter symmetrically placed about the source axis. Thickness variations in the films were measured across substrate diameters, and the average film thicknesses were compared. Similar data were also obtained for aluminum, aluminum oxide, and germanium films. Random thickness variations have been found on all the films, which are much larger than the uniform thickness gradations predicted by the geometric theory. These variations can be minimized but not eliminated by planetary rotation of the substrates.
IBM1
TL;DR: In this paper, a Ni-Fe film was deposited by e -beam evaporation on oxidized silicon wafers in a magnetic field and the dependencies of the internal stresses and of the magnetic properties on the substrate temperature and on the deposition rate were investigated.
Abstract: 10 000 A thick 80/20 Ni-Fe films were deposited by e -beam evaporation on oxidized silicon wafers in a magnetic field. The dependencies of the internal stresses and of the magnetic properties on the substrate temperature and on the deposition rate were investigated. Measurements were done in the as deposited state and after a 5 h easy-axis anneal at 400°C. It turned out that both the magnetic properties and the internal stresses were strongly dependent on the kinetics of deposition. The observed field-induced magnetic anisotropy is entirely contributed to pair ordering. No interdependence between the uniaxial magnetic anisotropy and the internal stresses was found.
TL;DR: In this article, a computerized evaporation process for the manufacturing of interconnecting aluminum metallurgy on silicon substrates is described. But the computer-controlled runs are compared statistically to manually controlled runs in this paper for three major process parameters: film thickness, rate of deposition, and alloy concentration.
Abstract: In the thin film semiconductor manufacturing field there is an ever increasing effort toward product quality and uniformity. This paper describes the computerized evaporation process for the manufacturing of interconnecting aluminum metallurgy on silicon substrates. An IBM 1800 data acquisition and control system has been programmed to interface with several modified Veeco manufacturing evaporation systems. The function of the 1800 was to completely control the evaporation cycle, record discreet and continuous process data, perform data retrieval, and provide failure recovery mechanisms. The computer-controlled runs are compared statistically to manually controlled runs in this paper for three major process parameters: film thickness, rate of deposition, and alloy concentration (copper percent concentration in the aluminum films).
01 Jan 1973
TL;DR: In this paper, a method for crystallization of LiAl compound has been studied in films deposited on to glass substrates at 350°C in vacuum of about 10-6 Torr, where the evaporation is made in order of Al, Al+Li and Al at the same temperature; the coevaporated Al and Li are sandwiched between the Al films.
Abstract: A method for crystallization of LiAl compound has been studied in films deposited on to glass substrates at 350°C in vacuum of about10-6 Torr. Good compounds of the films 1μ thick are obtained after the films are annealed at the substrate temperature of 350°C for more 90min, if the evaporation is made in order of Al, Al+Li and Al at the same temperature; the co-evaporated Al and Li are sandwiched between the Al films. The degree of crystallization of the films has been examined by electron diffraction and electric conductivity measurement.The crystallized films show the temperature dependence of the conductivity of “Semiconductor” at temperatures above about 200°C. The smallest conductivity obtained at room temperature is 2×103Ω-1cm-1, where the purity of the Li-component of the compound is 99.8% and that of the Al-componentof it is 99.99%.