Showing papers on "Evaporation (deposition) published in 1977"
TL;DR: In this paper, a review of the physical vapor deposition (PVD) of thin films is presented, focusing mainly on evaporation and sputtering processes and the physics of their growth and structure.
Abstract: Thick films will be defined here as those sufficiently thick to permit evolutionary selection processes during growth to influence their structures. High rates are defined as those sufficient to deposit thick films in a reasonable time. To avoid superficiality, this review is restricted to evaporation and sputtering, i.e. to physical vapor deposition (PVD). PVD is finding increased use for applications ranging from micro electronics to corrosion-barrier and wear-resistant coatings, and to the synthesis of free-standing shapes with unique mechanical properties. The emphasis here is on metallic deposits and on the physics of their growth and structure. Particular attention is given to sputtering, because recent developments ih sputtering tech nology make thick film deposition feasible, and because the subject has not been reviewed. Several reviews have concentrated on thick film deposition by evaporation (1, 2). Structure zone models (3-5) [particularly the model proposed by Movchan & Demchishin (3), which predicts three structural forms or zones as a function of T/Tm. where T is the substrate temperature and Tm is the coating-material melting point] have come into increased use in interpreting coating microstructures. There fore this review is organized from thc viewpoint of the zone models. After a brief survey of certain pertinent features of evaporation and sputtering, subsequent sections discuss each of the structural zones, metallurgical phase formation, and the mechanical properties of coatings. In this review the structure zones are defined in terms of dominant physical processes rather than structural forms. This generalization permits a broader correlation with experimental observations.
1,979 citations
TL;DR: In this article, epitaxial silicon films have been grown on single-crystal Si (100) substrates by evaporation from an e-gun source in ultrahigh vacuum and have been doped with gallium and with aluminum from separate oven sources.
Abstract: Epitaxial silicon films have been grown on single‐crystal Si (100) substrates by evaporation from an e‐gun source in ultrahigh vacuum and have been doped with gallium and with aluminum from separate oven sources. Gallium doping profiles have been controlled accurately for substrate temperatures in the range 600–800 °C and for carrier densities in the range 1014–5×1017 cm−3. Examples are given of abrupt changes in doping level. Measured drift mobilities in the films are within 15% of values for bulk silicon. Crystallographic properties of the films are comparable to those of the substrates and are suitable for device applications. Films doped with aluminum exhibit comparable electrical and crystallographic properties, but good control of the doping profile has not been achieved for the range of parameters studied.
108 citations
TL;DR: In this article, columnar growth structure arrayed in row-like order has been detected for films deposited at both angles of incidence, and the columns lie in the plane of incidence in both cases.
Abstract: The topography of silicon oxide films deposited at an angle of incidence of either 60° or 83° has been investigated using transmission electron microscopy. Columnar-growth structure arrayed in rowlike order has been detected for films deposited at both angles of incidence. The columns lie in the plane of incidence in both cases. The column angle of inclination from the normal to the substrate is 35° for the 60° deposition and it is 50° for the 83° deposition. The rows are, on the average, perpendicular to the plane of incidence. The ratio of the column width to the column periodicity is 0.70 for the 60° evaporation and is about 0.20-0.25 for films deposited at an angle of incidence of 83°. It is asserted that the topography of films deposited at the two angles is the primary factor determining the directional orientation of liquid crystals on obliquely deposited silicon oxide.
95 citations
TL;DR: In this article, the performance of a Ni-Cr-Mo steel SNCM-8 rod at a feed rate of 0.4 mm rev-1, with a depth of cut of 1.5 mm and at a machining speed of 234-158 m min-1.
90 citations
TL;DR: In this article, it was shown that crystal water not only provides a high ionic conductivity which is conditional for a fast electrochromic reaction but also stabilises electrocatalytically active surface sites for fast hydrogen or Li exchange with the adjacent electrolyte.
Abstract: WO3 films prepared under different conditions (evaporation, reactive sputtering and spraying of aqueous solutions of metatungstic acid) differ by orders of magnitude in their electrochromic sensitivity. Diffuse X-ray studies show the evaporated and sputtered films to be amorphous and to consists of a disordered network of corner sharing WO6 octahedra. Sprayed films have different degrees of crystallinity depending on spraying conditions. From differential scanning calorimetry we conclude that the crystal water present in most films strongly affects the local order of the corner sharing octahedra. We find that crystal water not only provides a high ionic conductivity which is conditional for a fast electrochromic reaction but also stabilises electrocatalytically active surface sites for fast hydrogen or Li exchange with the adjacent electrolyte.
80 citations
TL;DR: The optical properties of the Ni/Al2O3 composites measured over the range of the solar spectrum are in good accord with the predictions of the Maxwell-Garnett theory provided the Ni volume fraction is ≲ 2 as mentioned in this paper.
Abstract: Composite films of Ni particles embedded in an Al2O3 matrix have been produced by controlled coevaporation The optical properties of the Ni/Al2O3 composites measured over the range of the solar spectrum are in good accord with the predictions of Maxwell‐Garnett theory provided the Ni volume fraction is ≲02 The composite films have excellent spectral selectivity for the absorption of solar radiation, with a solar absorptivity of 094 obtained for a film produced with a composition gradient Low‐temperature emissivities of ∼01 have been obtained with composite films evaporated on highly reflecting metal substrates
74 citations
TL;DR: Tests at Los Alamos Scientific Laboratory indicate that hafnium dioxide's laser damage threshold is approximately 2 J/cm(2) at a wavelength of 355 nm.
Abstract: We measured the refractive index of layers of hafnium dioxide that were prepared by evaporation in a vacuum. It is transparent to wavelengths as short as 230 nm. Its refractive index at 300 nm was as high as 2.10 or as low as 1.90, depending upon the conditions of evaporation. Tests at Los Alamos Scientific Laboratory indicate that its laser damage threshold is approximately 2 J/cm2 at a wavelength of 355 nm. Multilayer dielectric mirrors were prepared using hafnium dioxide and silicon dioxide. The radiant reflectance exceeded 99% at a wavelength of 320 nm.
65 citations
TL;DR: In this article, an anisotropic microstructure has been discovered in amorphous rare-earth/transition-metal films, consisting of columnar regions of from 50-200 AA in diameter that are surrounded by a network of less dense material.
Abstract: An anisotropic microstructure has been discovered in vapour-deposited, amorphous rare-earth/transition-metal films. The structure consists of columnar regions of from 50-200 AA in diameter that are surrounded by a network of less dense material. The authors were able to produce a perpendicular component of magnetic anisotropy in amorphous Gd-Co films by evaporation in an oxygen atmosphere of approximately 10-6 Torr.
60 citations
TL;DR: In this paper, the diffusion of reactive hydrogen from Pt to an Ag2S phase boundary has been studied by following the reduction of a thin Ag 2S film which was either in direct contact with a Pt film or separated from the Pt by carbon or SiO.
54 citations
TL;DR: In this paper, the authors present a comparison between the present data and those for glassy carbon over the same energy range, using arc-evaporated carbon films between 0.6 and 3.8 eV.
Abstract: Ellipsometric measurements have been performed at room temperature on arc‐evaporated carbon films between 0.6 and 3.8 eV. Previously published data on evaporated carbon films are reviewed and a comparison made between the present data and those for glassy carbon over the same energy range.
45 citations
TL;DR: In this article, the activated reactive evaporation process by evaporating aluminum in the presence of a partial pressure of oxygen was used to synthesize Alumina deposits at various deposition temperatures from 700 to 1200°C.
TL;DR: Techniques for forming dielectric layers for fabricating semiconductor components are reviewed in this article, including low pressure techniques: evaporation, sputtering, plasma deposition, and low pressure CVD, and a number of miscellaneous techniques: roller coating, offset printing, centrifugation-sedimentation, and transfer.
Abstract: Techniques for forming dielectric layers for fabricating semiconductor components are reviewed, including (1) low‐pressure techniques: evaporation, sputtering, plasma deposition, and low‐pressure CVD, (2) techniques operating at one atmosphere total pressure: thermal oxidation, chemical vapor deposition, anodization, electrophoresis, spin on, spray on, silk screening, and (3) a number of miscellaneous techniques: roller coating, offset printing, centrifugation–sedimentation, and transfer. The advantages and limitations of the methods are presented and typical applications are given. Novel applications of the technology to other‐than‐silicon semiconductor devices are outlined, and future trends in the technology are indicated.
TL;DR: A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V oc oc as mentioned in this paper.
Abstract: A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V oc oc . A high n-value and fixed charge in the oxide are not necessary to obtain a high V oc .
01 Apr 1977
TL;DR: A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V oc oc.
Abstract: A study of experimental data on Cr-oxide-p-Si solar cells has led to a metal evaporation procedure which gives 0.50 V oc oc . A high n-value and fixed charge in the oxide are not necessary to obtain a high V oc .
Patent•
22 Jun 1977
TL;DR: The anti-reflection film for a synthetic resin base comprises a first layer of silicon dioxide (SiO 2 ) or magnesium fluoride (MgF 2 ) deposited by evaporation, a second layer of alumina (Al 2 O 3 ) deposited on the first layer by re-evaporation and a third layer of either silicon dioxide or magnesium fluoride (mfF 2 ), or both of them deposited by the same process as mentioned in this paper.
Abstract: Anti-reflection film for a synthetic resin base comprises a first layer of silicon dioxide (SiO 2 ) deposited on the synthetic resin base by evaporation, a second layer of alumina (Al 2 O 3 ) deposited on the first layer by evaporation, and a third layer of silicon dioxide (SiO 2 ) or magnesium fluoride (MgF 2 ) deposited on the second layer by evaporation. The first layer has a geometrical film thickness of 1 to 5 μ, the second layer has an optical film thickness of λ/4, and the third layer has an optical film thickness of λ/4.
TL;DR: In this paper, the synthesis mechanism of SiC film formation in the reactive ion-plating system appears to be different from that in an ordinary reactive evaporation system, and the r.f. plasma excitation in reactive ion plating is considered to be effective in the synthesis process.
TL;DR: In this article, the effect of substrate temperature during evaporation on the microstructure of Pd2Si thin films on (111) Si was investigated by transmission electron microscopy.
Abstract: The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher‐temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100 °C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200 °C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a Ts of 300 °C, the microstructure of Pd2Si is spongy and grains are much less oriented.
TL;DR: In this article, continuous thin films of Cr 200-400 A were grown by evaporation in high vacuum onto KCl and NaCl substrates held at 300 °C.
Abstract: Continuous thin films of Cr 200–400 A thick and predominantly consisting of the A‐15 phase were grown by evaporation in high vacuum onto KCl and NaCl substrates held at 300 °C. The films have a chemical purity of better than 98%, determined by 4He Rutherford scattering. The A‐15 phase is not stabilized by impurities. The lattice parameter determined by electron diffraction is 4.60 A. The grain size is about 500 A. The films did not show superconductivity down to 0.5 °K.
TL;DR: The crystal morphology of small particles of aluminium and silver made by evaporation under very clean conditions in 9999% pure argon at 10~20 Torr has been studied by electron microscopy and electron diffraction.
Abstract: The crystal morphology of small particles of aluminium and silver made by evaporation under very clean conditions in 9999% pure argon at 10~20 Torr has been studied by electron microscopy and electron diffraction The sum of the partial pressures of the residual gases other than argon in the evaporation chamber at the time of evaporation was of the order of 10-9 Torr The individual aluminium particles thus obtained had the shape of a cubo-octahedron with smoothly curved edges and corners, and the silver particles were mainly multiply-twinned with icosahedral shape Comparisons are made between the present results and those already obtained from the small particles made in an ordinary vacuum chamber
TL;DR: In this paper, the spectral selectivity of a coating in an efficient photothermal converter for solar energy has been investigated and it was shown that a coating with mass density ≲0.5 g/m2 agrees well with calculations based on the Maxwell-Garnett theory.
Abstract: Ultrafine chromium particles prepared by evaporation in argon + air are found to be highly absorbing over the solar spectrum and highly transparent in the infrared. Such spectral selectivity is the distinctive feature of a coating in an efficient photothermal converter for solar energy. Optical transmittance through coatings with mass density ≲0.5 g/m2 agrees well with calculations based on the Maxwell‐Garnett theory, whereas coatings with larger mass density exhibit a transmittance too low to be directly reconciled with this theory.
TL;DR: In this article, the structure and properties of refractory compound deposits of TiB 2, ZrB 2, ZrC, 55% TiB 1 −45% Zr B 2 and 60% Z R 2 −40% Z r B 2 were reported.
TL;DR: In this paper, the electron-trapping characteristics of W in SiO2 have been studied using evaporated and ion-implanted W. The results indicate a trapping cross section varying from 1.56×10−14 to 4.62× 10−14 cm2 depending on the evaporation time.
Abstract: The electron‐trapping characteristics of W in SiO2 have been studied using evaporated and ion‐implanted W. The evaporated W results indicate a trapping cross section varying from 1.56×10−14 to 4.62×10−14 cm2 depending on the evaporation time. The cross section of the implanted W is 1.06×10−15 cm2. Thermal‐detrapping measurements indicate an activation energy of 0.9 eV, whereas optical detrapping is not observed for light energies up to 6 eV. It is not understood why there is this large discrepancy of results. It is also interesting to note that Powell and Beairsto measured a barrier height of 3.6 eV for the W‐SiO2 interface.
TL;DR: Test fixturing was developed using a vertical-axis turbomolecular vacuum pump to provide both a vacuum atmosphere and a high speed spindle for specimen motion as discussed by the authors, which was mounted directly on the pump spindle, while specimens with beryllium oxide substrates were brought into contact with the rotating member at a specified load for a given length of time.
TL;DR: In this paper, the magnetic properties of thin nickel films were studied by means of ferromagnetic resonance spectroscopy under ultrahigh vacuum conditions (p -8 Pa) and they were shown to change reversibly with hydrogen pressure and temperature, which is in good agreement with well-known thermodynamic data.
TL;DR: In this article, the Hall effect of RbAg4I5 was shown to be less than 2 × 10-3 cm2/V·sec, and the authors concluded that the Hall mobility of silver ions in this material is less than two × 10 − 3 cm 2/V ·sec.
Patent•
IBM1
TL;DR: In this article, the Schottky barrier is used to prevent the interaction between aluminum and a material having a tendency to interact with aluminum by acting as a diffusion barrier, which is also applicable to FET or CCD structures.
Abstract: Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier. Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.
Patent•
23 Dec 1977
TL;DR: In this article, a reflection reducing coating on a substrate of oric material, preferably on a spectacle glass of plastic by evaporation in a vacuum, is described. But this method is not suitable for the case of glass with a thickness of from 1 to 10 nm.
Abstract: A method of depositing a reflection reducing coating on a substrate of oric material preferably on a spectacle glass of plastic by evaporation in a vacuum comprises depositing chromium by evaporation in an oxygen atmosphere under a pressure of betweeen 4×10-5 and 8×10-5 torr at a rate of from 0.01 to 0.05 nm per second and in a thickness of from 1 to 10 nm.
TL;DR: In this article, the evaporation of chromium from 316 type of steel, vacuum annealed at 1000 °C, has been investigated by menas of energy dispersive X-ray analysis and by neutron activation analysis.
Abstract: During selective chromium Oxidation of stainless steels the changes in chromium concentration at the metal surface and in the metal have an important bearing on the overall oxidation performance. It has been proposed that an analogue of chromium behaviour during selective oxidation is obtained from volatilisation of chromium during high temperature vacuum annealing. In the present report the evaporation of chromium from 316 type of steel, vacuum annealed at 1000 °C, has been investigated by menas of energy dispersive X-ray analysis and by neutron activation analysis. It was established that chromium loss from austenitic stainless steels is rate controlled by interdiffusion in the alloy. As predicted the chromium concentration at the metal surface decreased with increasing vacuum annealing time. The chromium depletion profile in the metal was in good agreement with the previously derived model apart from an anomalous region near the surface. Here the higher resolution of the neutron activation technique indicated a zone within ∼2μm of the surface where the chromium concentration decreased more steeply than expected.
TL;DR: In this paper, the fabrication of stable Cu2S films obtained by a solid state reaction between CuCl and CdS films is described, and the cell geometry used overcome many of the degradation effects commonly encountered in such cells prepared by the conventional chemiplating method.
Patent•
04 Apr 1977TL;DR: In this article, a flash evaporation process is carried out by feeding a nickel chromium wire, having a gold wire extending therealong to provide the desired composition, onto a heated tungsten strip within a vacuum system with substrates disposed in a position to obtain uniform deposition of the evaporated material thereon.
Abstract: High stability thin film resistors are made from an alloy comprising selected portions of nickel, chromium, and gold selected in a ratio to provide the desired temperature coefficient of resistance (TCR). The resistors are made by co-depositing gold with the nickel chromium alloy by a flash evaporation process. The evaporation process is carried out by feeding a nickel chromium wire, having a gold wire extending therealong to provide the desired composition, onto a heated tungsten strip within a vacuum system with substrates disposed in a position to obtain uniform deposition of the evaporated material thereon.