Showing papers on "Evaporation (deposition) published in 1982"

High quality transparent heat reflectors of reactively evaporated indium tin oxide

Abstract: Transparent and heat reflecting indium tin oxide films were prepared by electron beam evaporation of In2O3+9 mol.% SnO2 onto glass in an oxygen atmosphere of ∼5×10−4 Torr. Visible light absorption less than 2%, thermal infrared reflectance exceeding 90%, and a dc resistivity of ∼3×10−4 Ω cm were obtained for 0.3‐μm‐thick films deposited on a substrate at 300 °C. Similar properties could be achieved with substrate temperatures as low as 150 °C. By antireflection coating the films with an MgF2 layer, the visible transmittance exceeded the transmittance of the uncoated glass while the infrared reflectance was practically unchanged.

Silicon MBE apparatus for uniform high-rate deposition on standard format wafers

Abstract: The design and operation of a second generation silicon MBE apparatus are described. A large sample loading interlock permits rapid introduction of standard format 3–4‐in.‐diam silicon and sapphire substrates. Silicon and metallic species are deposited from dual e‐beam evaporation sources at rates of up to 1/3 μm/min. Dopants are introduced by evaporation from conventional Knudsen cells or by simultaneous, low energy ion implantation. Silicon, metal and ionized dopant fluxes are directly sensed and regulated to within ∠1% of preprogrammed values. Rotation of the substrate yields deposition uniformity of ?1% across a 3‐in. wafer. The system includes instrumentation for low and high energy electron diffraction, Auger electron spectroscopy and residual gas analysis.

Manufacture of magnetic recording medium

Abstract: PURPOSE:To obtain a magnetic recording medium which is excellent in wear resistance and corrosion resistance, and also is satisfactory in its magnetic characteristic, by constituting it so that an ion of a specific element having specific kinetic energy is made incident onto a ferromagnetic metallic thin film together with neutral evaporation corpuscles for forming a protective layer. CONSTITUTION:A vapor-deposited tape 8 which has provided a ferro-magnetic metallic thin film of cobalt, etc. on a base material such as a polyester film, etc. is shifted to a take-up roll 10 from a feed roll in a vacuum chamber 1, and also an ion source 5, an evaporation source 3 and an acceleration electrode 6 are operated. Subsequently, on the ferromagnetic metallic thin film, a protective layer is formed by making an ion of an element incident, which is selected from B, C, Al, Si, P, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Ag, Mo, Au or Sm, generated from the ion source 5 together with neutral evaporation corpuscles being a material for forming the protective layer, and accelerated so as to have kinetic energy of 10eV-15keV by the acceleration electrode 6.

Structure of vapor‐deposited Ge films as a function of substrate temperature

Abstract: The structure of Ge films grown by thermal evaporation has been studied as a function of the deposition temperature Ts by X‐ray diffraction, Raman scattering, and EXAFS (Extended X‐ray Absorption Fine Structure) analysis. It is found that there is a temperature range where the material is microscopically heterogeneous and consists of crystallites embedded in an amorphous connective tissue. The dimension and the percentage of the ordered domains are determined, and the nature of the amorphous to polycrystalline transition is thoroughly investigated. The data support the hypothesis of the instability of the diamond structure for small crystallites.ufoff

Vacuum UV spectrum of C3 trapped in argon at 8 K

Abstract: The vacuum ultraviolet absorption spectrum to 1200 A has been obtained for the products from the evaporation of graphite at 2700 °C, trapped in argon at 8 K. Based on correlations with the 1Πu–X1Σ+g transition of C3 in the near ultraviolet, the results of 13C substitution, and other observational evidence, it is proposed that a band system originating at 1890 A be assigned to the 1Σ+u–X1Σ+g transition of C3. Vibrational analysis yields ν1′≂1080, ν2′≂300, and ν3′≂780 cm−1 for the 1Σ+u state.

System for measuring electrical resistance and temperature during manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter deposition

Abstract: A system for measuring electrical resistance and temperature during the manufacture of thin, conductive films deposited on substrates by means of evaporation or sputter-deposition A deposition unit with an evacuatable load lock chamber and a rotating substrate holder are employed as the deposition system The specific electrical resistance of the film is measured according to the principle of the two-point or four-point measuring methods at a reference substrate with specific sample geometry and with low-resistance contacts The substrate temperature is measured by means of resistance thermometers With the invention, the transmission of the measured data occurs contact-free by means of electro-magnetic radiation, preferably by means of a telemetric pulse code modulation method

Alignment and texture of thin liquid crystal films on solid substrates

Abstract: Thin liquid crystal films in the range from 0.4 to 10 μm were thermally evaporated on solid surfaces. Semistable films were maintained on obliquely evaporated SiO surfaces that induce homeotropic, homogeneous, or tilted alignment. Realignment which violates the boundary conditions was observed in the smectic phase of thin films. The nematic phase of homogeneously aligned films has a peculiar two‐domain texture indicative of a spontaneous twist due to conflicting and degenerate boundary conditions.

Vacuum distillation of liquid metals: Part I. Theory and experimental study

Abstract: The kinetics of vacuum distilling copper, tin, manganese, and sulfur from melted steel scrap have been measured The experiments found that 70 to 90 pct of initial copper, 60 to 80 pct of initial tin, 80 to 100 pct of initial managanese, and 20 to 40 pct of initial sulfur can be eliminated in 30 minutes exposure to vacuum Melt masses were in the range 10 to 60 kg, melt temperatures in the range 1850 to 2050 K, and chamber pressures in the range 3 to 400 pascals Crucible diameter was 02m Mass transport has been described in terms of Machlin's model for melt phase diffusion, Langmuir's model for evaporation, and convective bulk flow for gas phase mass transport Two preliminary criteria are shown to demonstrate the suitability of vacuum distillation to any particular system and a third operational criterion is developed to define the range of vacuum required to eliminate gas phase mass transport resistance effectively

Heteroepitaxial growth of Ge on 〈111〉 Si by vacuum evaporation

Abstract: The heteroepitaxial growth of Ge on 〈111〉 Si substrates has been obtained by thermal and electron gun evaporation in the deposition temperature range 375–425 °C. Reflection high‐energy electron diffraction analysis shows that the films are 〈111〉 oriented and exhibit high crystalline quality with no evidence of twins. It was also found that the films are p type with the same mobility as bulk Ge single crystals.

Electrochemical photovoltaic cell having ternary alloy film

Abstract: A thin film compound semiconductor electrode comprising CdSe.sub.1-x Te.sub.x (0≦x≦1) is deposited on a transparent conductive substrate. An electrolyte contacts the film to form a photoactive site. The semiconductor material has a narrow energy bandgap permitting high efficiency for light conversion. The film may be fabricated by: (1) co-evaporation of two II-VI group compounds with a common cation, or (2) evaporation of three elements, concurrenty.

Activated Reactive Evaporation

Abstract: High quality optical coatings of metal oxides were prepared by Activated Reactive Evaporation (ARE). A cold cathode discharge is used for generation of low-energy oxygen ions and excited molecules. A survey of the operating parameters for the preparation of TiO2, BeO, In2O3, SnO2 and SiO2 coatings is given. Some results and problems are discussed in connection with the production of low-loss laser coatings, high power UV mirrors and conductive antireflection coatings.

Amorphous silicone solar cell

Abstract: PURPOSE:To improve the light absorption factor thereby to achieve higher photoelectric conversion efficiency of amorphous silicone solar cell by constructing the same in such a method as having the steps of forming convexities and concavities of small height in a grid-like manner on a glass surface and then successively forming an ITO transparent electrode film, an amorphous Si film and a metallic electrode layer. CONSTITUTION:A transparent glass substrate 4a is formed to have on the surface thereof a series of shallow periodical diffraction grid. An ITO transparent electrode film 5 is formed on the substrate surface by evaporation method. Then, a P layer 6 of amorphous Si, an i layer 7 and an N layer 8 are successively formed by a glow discharge decomposition of SiH4. These layers have the form of grid constituted by convexities and concavities conforming with those on the glass surface. According to this arrangement, the incident light L is effectively adsorbed by the amorphous Si layer through multi-reflection and refraction, so that the photoelectric conversion efficiency can be improved. Finally, an Al film 9 is formed to complete the solar cell.

Vacuum deposited Co-Cr films with perpendicular magnetic anisotropy

Abstract: Magnetic and structural properties of vacuum deposited cobalt-chromium (Co-Cr) films with perpendicular magnetic anisotropy have been studied. The films were deposited on tape-shaped heat-resistant polymer substrates which were continuously transported around a cylindrical can in evaporation vacuum chamber. During deposition the can was heated at elevated substrate temperatures. The deposition rate was in the range of several thousand angstroms per second, and the substrate transport speed was about 10 m/min. The perpendicular coercive force and the perpendicular anisotropy magnetic field of the films increased as the substrate temperatures were elevated. A perpendicular coercive force greater than 1000 Oe was obtained for the substrate temperatures higher than 300°C. All the Co-Cr films deposited at substrate temperatures 30-350°C had hexagonal close-packed (hcp) crystal structures and nearly constant values of c-axis orientation Δθ 50 .

Forming method of single crystal semiconductor film

Abstract: PURPOSE:To obtain a single crystal Si film at a low temperature on a glass substrate of low cost by such an arrangement wherein when crystals composed of an alloy of Au and Si are caused to educe on an amorphous substrate, the orientation of crystals is controlled by the repetitive patterns of Au film. CONSTITUTION:On a quartz glass substrate 11, a film of Au 12 which forms eutectic crystal with Si is caused to adhere thereto, a resist film of specific pattern 13 is provided thereon, and spatter etching is processed on exposed parts of the film 12 and a repetitive pattern of polygon 14 having a vertical angle which is a multiple of about 60 deg. is obtained. Here, the pattern 14 shall be a trapezoid having vertical angles of 60 deg. and 120 deg. and the distance between opposing sides shall be approx. 1mum, and pitch shall be approx. 1.2mum. Next, the substrate 11 is heated up to a temperature higher than the eutectic temperature of Si and Au, and Si is caused to adhere by evaporation, and eutectic alloy of Si-Au is caused to generate between patterns 14, and single crystal Si layer 19 is caused to generate of which crystal direction is aligned, by using surplus Si 18 adhered to the pattern 14. At the same time, Au is moved from the alloy 17 and the desired Si-Au thin film 20 is obtained.

Simple, low cost, and highly stable Pd evaporation source for use in UHV

Abstract: The design of a source for the thermal evaporation of Pd from a resistively heated W filament in UHV is presented The source’s main advantages are its simplicity, low cost, long lifetime, and stability at low deposition rates

Antireflection optical coating

Abstract: Recently, there has been the tendency to increasingly use optical machinery and devices which utilize optical parts made of synthetic resin. Since an antireflection coating film for these synthetic resin optical parts is high in adhesive strength and is hard, it is advantageous to use silicon oxide. Particularly, silicon monoxide (SiO) varies in refractive index by varying the evaporation condition, and therefore, it is possible to make use of such properties to produce a multi-layered antireflection coating film from a single evaporation material by varying the evaporation conditions.

Properties of TiN obtained by N+2 implantation on Ti‐coated Si wafers

Abstract: Titanium nitride films have been prepared by implanting 3.4×1017 cm−2 N+2 ions in 600‐A‐thick titanium layers deposited on silicon single crystals. Unlike the films obtained by evaporation or sputtering, both low electrical resistivity and fairly good optical properties were found even in the as‐implanted samples. Moreover, thermal treatments up to 700 °C performed both in vacuum and H2 atmosphere resulted in a further improvement of the overall films characteristics. This opens interesting perspectives of applications for TiN as a transparent (antireflective) conducting material in photovoltaic field, which are presently being investigated.

Model calculations of tunnelling and thermal evaporation rate constants relating to field evaporation

Abstract: Tunnelling and thermal evaporation rate constants are compared for model potential barriers relating to field evaporation. Previous calculations of the temperature below which tunnelling becomes appreciable are shown to be model dependent. Distinctive features of different shaped barriers are found which might be experimentally observable and this could provide a means to distinguish between charge-hopping, charge-draining and image-hump models of field evaporation. The experimental results of Wada et al. (1980), who measured the temperature dependence of the evaporation field of W and Mo at constant evaporation rate, are shown to be consistent with the occurrence of ionic tunnelling below 60K.