Showing papers on "Evaporation (deposition) published in 1987"
TL;DR: In this article, the optical absorption and photovoltaic properties of thin films of Cu 2 SnS 3 were investigated and a Schottky type solar cell was developed from it.
139 citations
TL;DR: In this article, the preparation of cubic boron nitride film by physical vapor deposition processes has been investigated and it was found that mixing argon gas to the reactant gas N2 assists the formation of cubic phase.
Abstract: The preparation of a cubic boron nitride film by physical vapor deposition processes has been investigated. The electron beam guns of a hollow cathode discharge type and a conventional high‐voltage type were used for the boron evaporation source. The stoichiometric boron nitride film could be obtained by using a gas activation nozzle. It was necessary to apply the rf bias potential to the substrate to accelerate the formation of the cubic BN phase. It was found that mixing argon gas to the reactant gas N2 assists the formation of cubic phase. The film structure was characterized by the infrared absorption spectrum and transmission electron diffraction observation. The microhardness of the cubic boron nitride film obtained was estimated to be about 4000 kg/mm2.
111 citations
TL;DR: In this paper, a new method for preparing the polymer films directly in the reduced atmosphere has been developed, in which polymerization can be carried out through depositing the component monomer vapors.
Abstract: A new method for preparing the polymer films directly in the reduced atmosphere has been developed. In this process the polymerization can be carried out through depositing the component monomer vapors. Both pyromellitic dianhydride and 4,4’‐diaminodiphenyl ether (oxydianiline) were evaporated at a molar ratio in terms of stoichiometry by controlling the heating power for each evaporation source. From the infrared absorption spectrum observation, it was found that the as‐deposited film was the mixture of the polyamic acid and both nonreacted monomers. After having been heated to 200 °C for 60 min, the deposited film was finally transformed into the polyimide film through the condensation reaction. The obtained polyimide film had good adhesion to the glass and metal substrate and showed excellent chemical resistance, heat resistance, and electrical insulation characteristics. By selecting the appropriate combination of monomers, other polymer films could be obtained through the vacuum deposition polymeriza...
111 citations
TL;DR: In this article, a gas evaporation method using an arc discharge as the heat source was used for the preparation of Si and β-SiC, and it was concluded that these spherical Si particles are crystallized from liquid droplets which condense from Si vapors.
Abstract: Fine crystals of Si having spherical shapes of less than 200 nm, as well as hybrid particles of Si and β-SiC were prepared by a gas evaporation method using an arc discharge as the heat source. Si particles always contain stacking faults and twins which are categorized as growth faults. All the planar faults in a particle occur in the same orientation (parallel to a [110] direction). The nature of these planar faults was examined in terms of crystal growth using an electron microscope. As a result, it has been concluded that these spherical Si particles are crystallized from liquid droplets which condense from Si vapors.
96 citations
TL;DR: Diamond-like carbon thin films were deposited by pulsed-laser evaporation as mentioned in this paper, and the films were diamond-like, as confirmed by refractive index (2.1 to 2.2), optical transparenty and chemical resistance.
Abstract: Diamond-like carbon thin films were deposited by pulsed-laser evaporation. A carbon target was irradiated by a Xe-Cl laser with a power density of 3×108 W/cm2. Ions were mixed with vaporized atoms. Deposition rates were typically 200 A/ min. Film properties changed with substrate temperature. The films deposited at 50°C were diamond-like, as confirmed by refractive index (2.1 to 2.2), optical transparenty and chemical resistance. Hydrogen-free films were produced. Optical band gap was 1.4 eV and electrical resistivity was 108 Ω-cm. No crystallinity was observed.
91 citations
TL;DR: In this paper, the authors showed that indium and selenium can be easily obtained by the evaporation of indium with the supply ratio R = [Se]/[In] above 1.7 and the substrate temperature Ts above 170°C.
79 citations
TL;DR: In this article, the conventional arc evaporation process with a random moving cathode spot was modified to minimize the ejection of solid particles from the cathode spots using steered arc-evaporation, and two methods for further improvements were investigated and evaluated by machining with coated carbide inserts.
Abstract: TiN coatings deposited by physical vapour deposition are successful in various industrial applications. Using arc evaporation, two methods for further improvements were investigated and evaluated by machining with coated cemented carbide inserts. The conventional arc evaporation process with a random moving cathode spot was modified to minimize the ejection of solid particles from the cathode spot using steered arc evaporation. The TiN coatings (6 – 7 μm thick) deposited in this manner showed about 42% lower flank and crater wear than did TiN coatings (6 – 7 μm thick) deposited by conventional random arc evaporation, and comparable flank and crater wear with TiC-TiN coatings (10 μm thick) deposited by chemical vapour deposition (CVD). Using steered arc evaporation, further improvements were obtained by depositing ternary coatings. Inserts coated with Ti 0.94 Hf 0.06 N (2.5 μm thick) and Ti 0.92 Nb 0.08 N (4.9 μm thick) showed lower flank wear than did inserts coated with TiN (2.5 μm thick). The rake face of these three types of inserts (with layer thickness between 8.3 and 10.2 μm) showed lower wear than did the rake face of TiC-TiN CVD-coated inserts with a layer thickness of 10.4 μm.
75 citations
TL;DR: In this article, the dependence of the hardness of the TixAl1−xN coatings on the nitrogen partial pressure, the structural features of the coating surface and fracture are discussed.
68 citations
TL;DR: In this paper, the authors obtained undoped zinc oxide films with a best resistivity of ∼1.1 × 10-3 Ω cm, a carrier density of ∼ 1.5 × 1020 cm−3 and a mobility of ∼38 cm2V−1s −1.
Abstract: Highly transparent and conducting undoped zinc oxide films have been obtained with a best resistivity of ∼1.1 × 10-3 Ω cm, a carrier density of ∼1.5 × 1020 cm−3 and a mobility of ∼38 cm2V−1s −1. These were produced by activated reactive evaporation at a deposition rate of 2 to 8A/s with a substrate temperature ≤200° C. The films deposited by this process were found to have resistivities that were thickness independent and also were relatively insensitive to deposition parameters. In terms of conductivity, it was found that films deposited at higher temperatures (T > 300°+ C) were always inferior to the films deposited below 200° C. High temperature vacuum annealing (350° C) significantly degraded the resistivity of the undoped films deposited at low temperature; this was attributable to a drop in both the electron concentration and the mobility. Aluminum doping was found to be able to stabilize the electron concentration while the drop in mobility was found to be related to the choice of substrate.
59 citations
15 Dec 1987-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this article, an ultra-high-vacuum chamber was built which can be coupled to a diffractometer via a rotary feedthrough, allowing in situ diffraction experiments to be performed on growing surfaces and thin films.
Abstract: An ultrahigh-vacuum chamber has been built which can be coupled to a diffractometer via a rotary feedthrough. X-rays enter and leave the chamber through a large beryllium window. In addition to standard equipment for surface preparation and reflection high-energy electron diffraction, the chamber contains Knudsen evaporation cells for MBE crystal growth. This arrangement allows in situ diffraction experiments to be performed on growing surfaces and thin films.
56 citations
TL;DR: In this paper, an ion-assisted thin-film deposition technique was proposed to produce thin films with properties not achievable by conventional deposition, such as structural and chemical properties of the resulting thin film.
Abstract: Concurrent energetic particle bombardment during film deposition can strongly modify the structural and chemical properties of the resulting thin film. The interest in this technique, ion-assisted deposition, comes about because it can be used to produce thin films with properties not achievable by conventional deposition. Bombardment by low energy ions occurs during almost all plasma-based thin film deposition techniques. Bombardment of a growing film, particularly by accelerated ions, can also be combined with non-plasma-based deposition techniques, such as evaporation, to simulate some of the effects observed with sputtering. The bombarding particle flux is usually controllable so that the arrival rate, energy, and species can be independently varied from the depositing flux. Thus, a basic aspect of ion-beam-based deposition techniques is the “control” often absent in plasma-based techniques. In plasmas, the voltage, current, and pressure are all interdependent. The energetic bombardment at the substrate-film interface depends on the various properties of the plasma, as does the deposition rate. It is often difficult, or even impossible, to decouple these processes. With ion-beam-based deposition techniques, the ion bombardment is essentially independent of the deposition process, and both can be more easily controlled.The incident energetic particle contributes some of its energy or momentum to irreversibly change the dynamics of the film surface. The incident particle may also be incorporated into the growing film, changing the film's chemical nature. The changes induced by particle bombardment during deposition are often not characteristic of equilibrium thermodynamics because the incident particle's energy is often many times the local adsorption or binding energy.
TL;DR: An ion-assisted evaporation process is described for the formation of ITO films on substrates that cannot be heated beyond 150 degrees C.
Abstract: An ion-assisted evaporation process is described for the formation of ITO films on substrates that cannot be heated beyond 150° C. Refractive indices and absorption coefficients were measured in the visible part of the spectrum for some of the films. The resistivity of the films varied between 0.7 and 8 × 10−3 Ω cm, depending on the process parameters. The properties were uniform over 25-cm diam areas.
TL;DR: In this paper, the properties of the resulting structures have been analyzed using SEM, x-ray diffraction, VSM, and FMR methods, and the results are similar to those of earlier work on thin fcc Co layers in the same range of thicknesses, where the room temperature moment was reduced but depended only slightly on layer thickness, and where the uniaxial anisotropy was observed to be small.
Abstract: Alternate layers of Co and Cu of individual layer thicknesses from 1.5 to 8.0 nm and total thickness of about 100 layers and of Co bilayers separated by Cu have been electroplated from an electrolyte having a low concentration of Cu and a high concentration of Co atoms. The properties of the resulting structures have been analyzed using SEM, x‐ray diffraction, VSM, and FMR methods. Comparable structures have also been fabricated by e‐beam evaporation in high vacuum for comparison purposes. X‐ray diffraction patterns indicate only the fcc structure. Assuming the Co thickness to be that deduced from the plating charge, we infer 4πM values in the range 6.0–14.5 kG from VSM and FMR. Some uniaxial anisotropy is apparent in this system. These results are similar to those of earlier work on thin fcc Co layers in the same range of thicknesses, where the room‐temperature moment was reduced but depended only slightly on layer thickness, and where the uniaxial anisotropy was observed to be small.
TL;DR: In this article, it was shown that small additions of copper to polymer film where both components are deposited from the vapour phase, and the copper content is in the range of 0.1 to 1.0% by weight, can have a profound effect on the electrical conductivity of the polymer films and a special system of boats for the evaporation sources was devised to enable films of controlled composition to be produced.
Abstract: Experiments have shown that small additions of copper to polymer film where both components are deposited from the vapour phase, and the copper content is in the range of 0.1 to 1.0% by weight, can have a profound effect on the electrical conductivity of the polymer films and a special system of boats for the evaporation sources was devised to enable films of controlled composition to be produced. Structural studies using the electron microscope and X-tray photoelectron spectroscopy show that the copper is finely dispersed within the polypropylene matrix with grain size of the order of 10μm diameter and that some of the copper has been converted to copper oxide, but the composite film retains its overall amorphous structure. Electrical measurements on polypropylene samples loaded with 0.15% copper by weight show (a) for MIM sandwich structures with typical dielectric thickness of 300 nm, ohnnicV-I characteristics up to approximately 106 V cm−1 and a space-charge-limited characteristic beyond that and (b) for planar structures with typical effective inter-electrode separation of 0.05 cm, ohmicV-I characterintics up to approximately 2 × 103V cm−1 end beyond that a high-field conduction of the Poole-Frenkel type. For both typen of samples a trapping centre at 0.33 to 0.34 eV is estimated. The planar structure shows considerable photosensitivity.
TL;DR: In this paper, the amount of arsenic evaporated through very thin encapsulating films during rapid thermal processing (RTP) was directly measured using 5 MeV Rutherford backscattering analysis for 20nm-thick Si, SiO2, and Si3N4 caps.
Abstract: We have directly measured the amounts of arsenic evaporated through very thin encapsulating films during rapid thermal processing (RTP) The evaporated molecules are condensed onto a copper film on a sapphire substrate and subsequently counted using 5 MeV Rutherford backscattering analysis For 20‐nm‐thick Si, SiO2, and Si3N4 caps, we have determined the temperature ranges for which a 10‐s RTP cycle produces less than 1×1015/cm2 of evaporated As Preliminary measurements at higher temperatures of the thickness and time dependence of evaporation through SiO2 caps of 20 to 60 nm thicknesses are also presented and discussed in terms of the mechanism of As loss
TL;DR: Transmission electron microscopy studies show that the crystal grain size of MgF(2) films is not strongly affected by oxygen or argon-ion bombardment, and EELS is demonstrated to be a valuable technique for determination of optical properties from the near-infrared to x-ray regions of the spectrum.
Abstract: The optical properties of MgF(2) films prepared by evaporation and ion-assisted deposition have been determined from transmittance and near-normal incidence reflectance measurements and also from electron-energy loss spectroscopy (EELS). The results show that oxygen-ion assistance leads to higher extinction coefficients for wavelengths <180 nm. Transmission electron microscopy studies show that the crystal grain size of MgF(2) films is not strongly affected by oxygen or argon-ion bombardment. The presence of MgO in the films is inferred from RBS measurements and proposed to be the major factor influencing VUV losses. EELS is also demonstrated to be a valuable technique for determination of optical properties from the near-infrared to x-ray regions of the spectrum.
TL;DR: In this paper, a technique is described which significantly reduces the phase transition temperature of vanadium dioxide thin films without sacrificing film quality, and the impact of these parameters on microstructural, electrical, and optical properties, as well as on transition temperature, is discussed.
Abstract: Large reductions in the phase transition temperature of vanadium dioxide thin films have been achieved in the past by doping with elements such as tungsten or niobium; however, considerable degradation of electrical and optical properties are routinely observed. In this investigation, a technique is described which significantly reduces the transition temperature to doped values, without sacrificing film quality. Vanadium oxide films were deposited at room temperature by ion‐assisted reactive evaporation and subsequently annealed in flowing oxygen. Deposition parameters include a range of argon‐to‐oxygen ion ratios, ion energies and fluxes, and background oxygen pressures. The impact of these parameters on microstructural, electrical, and optical properties, as well as on transition temperature, will be discussed.
TL;DR: In this article, the basic principles that regulate vacuum evaporation and the physical processes involved in thin film formation are discussed, and the principal methods of heating the evaporant are detailed and the means of measuring and controlling the film thickness are elucidated.
Patent•
10 Nov 1987TL;DR: In this article, a birefringent plate comprising a transparent substrate and an obliquely evaporated film formed on the transparent substrate, is free from the visual angle dependence because the OE is formed into a multilayer composition and the neighboring layers have a different evaporation direction.
Abstract: A birefringent plate comprising a transparent substrate and an obliquely evaporated film formed on the transparent substrate, is free from the visual angle dependence because the obliquely evaporated film is formed into a multilayer composition and the neighboring layers have a different evaporation direction. Moreover, a manufacturing method for the birefringent plate, using a device constituted of a vacuum chamber and a crucible having a large number of inclined through holes, is capable of making the film thickness of the obliquely evaporated film uniform.
IBM1
TL;DR: In this paper, the magnetron-sputtered tungsten films in metal/oxide/semiconductor (MOS) devices were reported, which are also ideally suited for via-hole filling, contact metallization and upper level wiring.
TL;DR: In this paper, Selenium films were prepared by pulsed laser evaporation of the elemental powder in vacuum, and their growth rates as a function of average laser power (0.1-5 W/cm2) and wavelength (266-1064 nm) were measured.
Abstract: Selenium (Se) films were prepared by pulsed laser evaporation of the elemental powder in vacuum. Film growth rates as a function of average laser power (0.1–5 W/cm2) and wavelength (266–1064 nm) were measured. The angular distribution of evaporated material was found to be unusually narrow for wavelengths shorter than the Se absorption edge (∼600 nm). The photon efficiency for evaporation ranged from 0.4 to 0.1 atoms/photon for 266 to 1064 nm light, respectively.
Book•
01 Aug 1987
TL;DR: The Characteristics of the ion plating process: Gas Discharge Sputtering Processes Occuring Near the Cathode Number of Ionized Particles Ion Plating System: The Vacuum and Gas Control Unit Evaporation Sources Electron Beam Evapolation The Ion plating Process: Enhanced Ionization Sources, RF Coil Electrode Process Control Cleaning Metals Deposition Rate and Thickness Monitors Reactive ion plated: Nitride Coatings Oxide Coatings as discussed by the authors.
Abstract: The Characteristics of the Ion Plating Process: Gas Discharge Sputtering Processes Occuring Near the Cathode Number of Ionized Particles Ion Plating System: The Vacuum and Gas Control Unit Evaporation Sources Electron Beam Evaporation The Ion Plating Process: Enhanced Ionization Sources, RF Coil Electrode Process Control Cleaning Metals Deposition Rate and Thickness Monitors Reactive Ion Plating: Nitride Coatings Oxide Coatings The Characteristics of Ion Plated Coatings: Adhesion Wear Friction Fatigue Applications of the Ion Plating Technique: Corrosion Protection, High Temperature Applications Cutting Tools Lubrication Electrical Application.
TL;DR: In this article, a comparison of the x-ray induced O(KVV) Auger spectra evolved at different Ti coverages on silica and sapphire surfaces suggests that both surfaces have the same chemical reactivity with titanium.
Abstract: X‐ray photoelectron spectroscopy has been used to investigate the chemical interaction of Ti with fused silica and sapphire by sequential evaporation of Ti onto these substrates. In both cases, the intermediate oxidation state of titanium, i.e., a TiOx‐like (1≤x≤1.5) state, is formed at the interface at low Ti coverages (<1 monolayer). Chemical bonds appear to have developed between the Ti 3d electron and the 2p electron of oxygen at the interaction sites on the substrate surface. Comparison of the x‐ray induced O(KVV) Auger spectra evolved at different Ti coverages on silica and sapphire suggests that both surfaces have the same chemical reactivity with titanium.
TL;DR: In this article, a new method was developed to obtain clear diffraction patterns of organic thin films evaporated on substrates such as Au. The X-rays were detected with a pure Ge solid state detector set at a constant scattering angle and analyzed with a multichannel analyzer.
Abstract: A new method was developed to obtain clear diffraction patterns of organic thin films evaporated on substrates such as Au. In this method, total reflection on substrates was utilized to most efficiently collect the diffracted X-rays from organic thin films. The X-rays were detected with a pure Ge solid-state detector set at a constant scattering angle and analyzed with a multichannel analyzer. Excellent performance of this system was demonstrated for a thin stearic acid film evaporated on Au and Cu-phthalocyanine on glass.
TL;DR: In this paper, a qualitative study of the ZnS/p•Si interface was conducted and it was shown that radio-frequency sputtering results in Fermi-level pinning, which is attributed to the presence of silicon dangling bonds caused by radiation damage.
Abstract: Thin films of ZnS have been deposited on p‐Si by evaporation, radio‐frequency sputtering, and magnetron sputtering to form metal‐insulator‐semiconductor structures. The 1 MHz admittance‐voltage characteristics of each have been compared for a qualitative study of the ZnS/p‐Si interface. It is shown that radio‐frequency sputtering results in Fermi‐level pinning, which is ascribed to the presence of silicon dangling bonds caused by radiation damage. It is argued that this damage is advantageous for ZnS/p‐Si electroluminescent diodes.
TL;DR: In this paper, p-type CdTe films produced by the hot-wall evaporation technique were critically studied to obtain information on different parameters, e.g. refractive index and absorption coefficient.
TL;DR: In this paper, thin films of yttria-stabilized cubic zirconia have been grown on GaAs (100) substrates by pulsed laser evaporation at room temperature.
TL;DR: In this article, thin films of suboxides of silicon (SiOx, 1.4
Abstract: Thin films of suboxides of silicon (SiOx, 1.4
TL;DR: By the double source evaporation of tetracyanobenzene (TCB) and copper under 10 −4 ∼10 −3 Torr argon atmosphere and subsequent heat treatment, the authors can make poly copper phthalocyanine (poly CuPc) thin films.
TL;DR: In this article, it was found that the key point in reducing the resistivity of the ITO film is by controlling the tin to indium weight ratio to an optimum value of 3 to 1.
Abstract: Films of the transparent conductor-tin-oxide (ITO) have been deposited successfully by direct thermal evaporation of metallic indium and tin in an oxygen ambient. Various techniques, such as scanning and transmission electron microscopy, x-ray diffraction, electron microprobe analysis, Hall measurements, and optical transmission measurements, were applied to determine the crystal structure and to measure grain size, tin concentration, optical transmittance, electron concentration, and the mobility of the ITO films. It is found that the key point in reducing the resistivity of the ITO film is by controlling the tin to indium weight ratio to an optimum value of 3 to 1. ITO films with resistivity as low as 1.8 x 10/sup -4/ ..cap omega..-cm and an average optical transmittance as high as 90% can be achieved reproducibly. The films are polycrystalline with a bcc structure and a grain size of approximately 500A.