Evaporation (deposition)

About: Evaporation (deposition) is a research topic. Over the lifetime, 12987 publications have been published within this topic receiving 180073 citations.

Manufacture of aluminum light-reflecting film

Abstract: PURPOSE:To manufacture an Al light-reflecting film excellent in corrosion resistance and having high reflectivity by successively forming and laminating an Al2O3 first-layer film, an Al reflecting film, and an Al2O3 sheathing film on the surface of a substrate by a vacuum vapor deposition method. CONSTITUTION:An Al material 5 and a substrate 4 are set in an evaporation source 2 and a substrate holder 3 in a vacuum vessel 1, respectively, and the pressure inside the vacuum vessel 1 is properly reduced by means of a vacuum pump 10. Subsequently, O2 gas and Ar gas are supplied through supply pipes 9, 12, respectively, and simultaneously a voltage is impressed from a high-frequency oscillator 8 to initiate high-frequency discharge from an antenna 7, by which a plasma of gaseous mixture is produced. The Al material 5 is heated and melted in the above state to generate vapor and ionized via the plasma, by which an Al2O3 first-layer film is formed on the surface of the substrate 4. Then, the supply of O2 gas is stopped and Ar gas along is supplied to form an Al reflecting film on the Al2O3 first-layer film, and O2 gas is supplied again to form an Al2O3 sheathing film on the Al reflecting film. By this method, the good-quality Al light-reflecting film having superior corrosion resistance, dense structure and high reflectivity can be formed with high efficiency.

Optical properties of Fe2O3 deposited by IBAD and its usage in interference filters

Abstract: This paper deals with thin films of Hematite (Fe2O3) deposited by ion beam assisted deposition (IBAD). It describes variation of optical properties with deposition parameters, especially oxygen flow and deposition rate. Optimal deposition parameters for Fe2O3 thin film were identified with criterion of the highest possible refractive index and lowest absorption. Film properties were measured and modelled by spectroscopic ellipsometry. Design of Fabry-Perot interference filter was used as a case study to compare properties of a Fe2O3 and TiO2 as a high refractive index materials. The first design uses combination of TiO2 and SiO2 layers, which is considered as a standard solution. The second design consists of Fe2O3 and YF3 layers. Comparison of these two designs shows that the design with SiO2 and Fe2O3 has considerably lower layer count. Due to the fact that Fe2O3 has significant absorption in the visible spectra its use is limited to red and infrared wavelengths. The paper describes deposition of designed filter (Fe2O3 and YF3) and measurement of its properties. Measured data are compared with the design.

Light-trapping structures based on low-melting point metals for thin-film solar cells

Abstract: In this article, a new way based on low-melting-point metals is provided to fabricate light-trapping structures. Three classic metals, Al, Bi and Sn, are utilized to introduce textured topography. The fabrication technologies are quite simple that traditional evaporation is used here. The obtained textured Bi and Sn coatings are oxidized in air to be Bi 2 O 3 and SnO 2 . Root-mean-roughness of over 100nm can be obtained, 120nm, 150nm and 142nm for Al, Bi 2 O 3 and SnO 2 , respectively. Angle resolved scattering (ARS) of the coatings dependence on light scattering in air is compared and all the three coatings can scatter the incident light into large angles effectively. This indicates good light absorption in the subsequently deposited absorber layer. The three coatings are used as back reflectors and different silicon thickness from 300nm to 1200nm are sputtered on. The amorphous silicon is recrystallized by Cu induce crystallization. The reflectivity of the samples is tested by a spectrometer with an integrating sphere and average reflectivity (R a ) in the wavelength region from 400nm to 1100nm is discussed to reveal the light-trapping efficiency. The results presents that with only 300nm thick silicon layer, the R a can be limited to 14% for the SnO 2 coating. The R a of Bi 2 O 3 coated structure changes little when the silicon thickness changes between 480nm and 1200nm, and with only 480nm thick silicon layer, the R a can be limited to 12%. For the textured Al coating, an optimal silicon thickness exists as 840nm and the Ra can be limited to nearly 10% at this point. We believe that the technologies are suitable for thin film solar cells for mass production.

Fabrication of mixed halide perovskite films by thermal co-evaporation

Abstract: Perovskit tabakalarinin termal es-buharlastirma yontemi ile uretilmeleri gunes hucrelerinde kullanilmak uzere genis alana sahip, delik kusuru bulunmayan ve homojen filmlerin uretilmesini saglayan onemli bir tekniktir. Bu calismada, tum araligi kapsayan ( 0≤x≤3 ) farkli Br/I oranina dolayisi ile farkli bant araliklarina sahip MAPbI 3-x Br x perovskit tabakalar es-buharlastirma yontemi ile ilk kez uretilmislerdir. Gelistirilen filmlerin optik ve yapisal analizleri fotoluminesans, UV-Vis spektrometresi, X-isini kirinimi ve taramali elektron mikroskobu ile yapilmistir. Bu calisma termal es-buharlastirma teknigi ile farkli bant genisligine sahip homojen perovskit tabakalarin elde edilmesinin mumkun oldugunu gostermektedir. Bu calismada gelistirilen Stokes kaymasina sahip olmadigi gozlemlenen MAPbI 2 Br perovskit filmi, ozellikle yuksek verimli perovskit/silisyum cok eklemli gunes hucrelerinin elde edilebilmesi icin onemlidir.

Method for operating ion plating device

Abstract: PROBLEM TO BE SOLVED: To improve the yield of the material to be evaporated in such a manner that a plasma beam is introduced into the side of a hearth in the process of the formation of film onto a substrate and suppressing the evaporating effect of the material to be evaporated in such a manner that a plasma beam is introduced into the side of an auxiliary anode in the meantime in which the substrate is exchanged. SOLUTION: In the meantime in which one substrate is subjected to ion plating, a conduction controlling element 8 is made off, a plasma beam is introduced into the side of a hearth 2 to flow the electric current of the plasma beam therethrough, and the evaporation of the material to be vapor-deposited in the hearth 2 is promoted to adhere it to the surface of the substrate. Till ion plating to the next substrate starts after the completion of the ion plating to the primary substrate, the conduction controlling element 8 is made on, a plasma beam is introduced into an auxiliary anode 3 to flow the electric current of the plasma beam therethrough, and the evaporating effect of the material to be vapor-deposited is suppressed. In this way, the useless evaporation of the material to be evaporated is eliminated, and the interval of the maintenance within a vacuum vessel can be prolonged.