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Evaporation (deposition)

About: Evaporation (deposition) is a research topic. Over the lifetime, 12987 publications have been published within this topic receiving 180073 citations.


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Journal ArticleDOI
TL;DR: In this paper, a single phase nanocrystalline Cu 2 O thin films were synthesized at a relatively low substrate temperature using the activated reactive evaporation technique, and structural and optical characterizations of these films were carried out using: glancing angle X-ray diffractometer; Fourier transform infrared spectrometer; transmission electron microscope; and UV-VIS-NIR spectrophotometer.

359 citations

Journal ArticleDOI
TL;DR: In this paper, the angular distribution of the composition and thickness of the Y•Ba•Cu oxide film deposited by firing excimer laser (30 ns, 248 nm) pulses at a stoichiometric Y1Ba2Cu3O7−x pellet was measured using Rutherford backscattering technique.
Abstract: Using Rutherford backscattering technique, we have measured the angular distribution of the composition and thickness of the Y‐Ba‐Cu oxide film deposited by firing excimer laser (30 ns, 248 nm) pulses at a stoichiometric Y1Ba2Cu3O7−x pellet. The angular distribution consisted of two distinct components: one a cos θ component, a result of evaporation, and the other a highly forward directed component, a result of a secondary ejection process. The evaporated component is nonstoichiometric, as one would expect, whereas the forward‐directed component has a composition close to that of the pellet. Further, the forward‐directed stoichiometric component increases with the laser energy density in comparison with the evaporated component. These observations are discussed in the context of current models of laser‐induced material ejection at surfaces.The laser energy dependence of the deposition is of critical importance in controlling the film stoichiometry.

357 citations

Journal ArticleDOI
TL;DR: In this paper, a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as their adaptation to chal copyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(in,Ga)(S,Se)(2).
Abstract: The aim of the present contribution is to give a review on the recent work concerning Cd-free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite-type absorbers such as Cu(In,Ga)Se-2, CuInS2, or Cu(In,Ga)(S,Se)(2). The corresponding solar-cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1-xMgxO.

349 citations

Journal ArticleDOI
TL;DR: In this article, the structural properties of these IO films were investigated using x-ray diffraction, scanning electron microscope, and electron spectroscopy for chemical analysis, in comparison with the films formed by conventional magnetron sputtering and EB evaporation.
Abstract: Tin‐doped indium oxide (ITO) films with the resistivity less than 1.35×10−4 Ω cm were formed by low voltage dc magnetron sputtering (LVMS) and highly dense plasma‐assisted electron beam (EB) evaporation using the arc plasma generator (HDPE). The structural properties of these films were investigated using x‐ray diffraction, scanning electron microscope, and electron spectroscopy for chemical analysis, in comparison with the films formed by conventional magnetron sputtering and EB evaporation, in order to clarify the key factors for low resistivity. With decreasing plasma impedance and sputtering voltages from 540 to 380 V, the resistivity of the films deposited at Ts=400 °C decreased from 1.92 to 1.34×10−4 Ω cm, due mostly to increase in the carrier density. This LVMS film showed higher crystallinity because of lower damages of high‐energy particles during the deposition, which might increase the number of electrically active species. For HDPE, the film with resistance of 1.23×10−4 Ω cm was deposited at T...

347 citations

Journal ArticleDOI
TL;DR: In this article, fine particles of various metals (Mg, Al, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ag, Cd, Sn, Au, Pb and Bi) were prepared by evaporation in argon gas at low pressure.
Abstract: Fine particles of various metals (Mg, Al, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ag, Cd, Sn, Au, Pb and Bi) were prepared by evaporation in argon gas at low pressure. The evaporation was carried out in an ordinary vacuum evaporation unit using a tungsten wire basket heater, after introducing the gas into the vacuum chamber. The average particle size was controlled by changing the pressure of the argon. Particle diameter varied from about one hundred Angstoms at 1 mm Hg to a few tenths of a micron at 30 mm Hg. It was proved by electron diffraction that the particles of all the metals (except Pb) were not seriously oxidized in the air. Electron micrographs showed well defined crystal habits for some metals, e.g. hexagonal plates for magnesium and cubes for chromium. Remarkable "necklace-like arrangements" were observed for particles of the ferromagnetic metals. Many electron micrographs and diffraction patterns are reproduced to show the size, shape, arrangement and state of oxidation of the particles.

347 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20227
2021186
2020256
2019347
2018328
2017385