Extinction ratio

About: Extinction ratio is a(n) research topic. Over the lifetime, 8541 publication(s) have been published within this topic receiving 111908 citation(s).

12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators

Abstract: We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the device is analyzed theoretically and a 12.5-Gbit/s modulation with high extinction ratio >9dB is demonstrated experimentally using a silicon micro-ring modulator.

Broadband graphene polarizer

Abstract: Scientists study the coupling, guiding and polarizing of electromagnetic waves in graphene and demonstrate a graphene-based fibre polarizer that exhibits a transverse-electric-pass polarization at an extinction ratio of up to ∼27 dB in the telecommunications band.

Photonic crystal nanocavity assisted rejection ratio tunable notch microwave photonic filter

Abstract: Driven by the increasing demand on handing microwave signals with compact device, low power consumption, high efficiency and high reliability, it is highly desired to generate, distribute, and process microwave signals using photonic integrated circuits. Silicon photonics offers a promising platform facilitating ultracompact microwave photonic signal processing assisted by silicon nanophotonic devices. In this paper, we propose, theoretically analyze and experimentally demonstrate a simple scheme to realize ultracompact rejection ratio tunable notch microwave photonic filter (MPF) based on a silicon photonic crystal (PhC) nanocavity with fixed extinction ratio. Using a conventional modulation scheme with only a single phase modulator (PM), the rejection ratio of the presented MPF can be tuned from about 10 dB to beyond 60 dB. Moreover, the central frequency tunable operation in the high rejection ratio region is also demonstrated in the experiment.

All-optical wavelength conversion by semiconductor optical amplifiers

Abstract: Following a brief introduction to the applications for wavelength conversion and the different available conversion techniques, the paper gives an in depth analysis of cross gain and cross phase wavelength conversion in semiconductor optical amplifiers. The influence of saturation filtering on the bandwidth of the converters is explained and conditions for conversion at 20 Gb/s or more are identified. The cross gain modulation scheme shows extinction ratio degradation for conversion to longer wavelengths. This can be overcome using cross phase modulation in semiconductor optical amplifiers that are integrated into interferometric structures. The first results for monolithic integrated interferometric wavelength converters are reviewed, and the quality of the converted signals is demonstrated by transmission of 10 Gb/s converted signals over 60 km of nondispersion shifted single mode fiber.

Generating radially polarized beams interferometrically.

Abstract: Two interferometric techniques for converting a linearly polarized laser beam into a radially polarized beam with uniform azimuthal intensity are described. The techniques are based on the linear combination of orthogonally polarized beams, which have tailored intensity and phase profiles. Linearly polarized beams with intensity profiles tailored using a modified laser or an apodization filter are combined in separate experiments to produce radially polarized light. A beam with an extinction ratio of −21.7 dB and azimuthal intensity variations of less than ±12% is produced using the modified laser output. The second technique uses circularly polarized light and a unique spiral phase delay plate to produce the required phase profile. When focused, a radially polarized beam has a net longitudinal field useful for particle acceleration and, perhaps, other unique applications.