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Showing papers on "Extinction ratio published in 2012"


Journal ArticleDOI
TL;DR: In this paper, the authors demonstrate an on-chip, ultra-compact, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions.
Abstract: Electro-optic modulators have been identifi ed as the key drivers for optical communication and signal processing. With an ongoing miniaturization of photonic circuitries, an outstanding aim is to demonstrate an on-chip, ultra-compact, electro-optic modulator without sacrifi cing bandwidth and modulation strength. While silicon-based electro-optic modulators have been demonstrated, they require large device footprints of the order of millimeters as a result of weak non-linear electro-optical properties. The modulation strength can be increased by deploying a high-Q resonator, however with the trade-off of signifi cantly sacrifi cing bandwidth. Furthermore, design challenges and temperature tuning limit the deployment of such resonance-based modulators. Recently, novel materials like graphene have been investigated for electro-optic modulation applications with a 0.1 dB per micrometer modulation strength, while showing an improvement over pure silicon devices, this design still requires device lengths of tens of micrometers due to the ineffi cient overlap between the thin graphene layer, and the optical mode of the silicon waveguide. Here we experimentally demonstrate an ultra-compact, silicon-based, electro-optic modulator with a record-high 1 dB per micrometer extinction ratio over a wide bandwidth range of 1 μm in ambient conditions. The device is based on a plasmonic metal-oxide-semiconductor (MOS) waveguide, which effi ciently concentrates the optical modes ’ electric fi eld into a nanometer thin region comprised of an absorption coeffi cient-tuneable indium-tin-oxide (ITO) layer. The modulation mechanism originates from electrically changing the free carrier concentration of the ITO layer which dramatically increases the loss of this MOS mode. The seamless integration of such a strong optical beam modulation into an existing silicon-on-insulator platform bears signifi cant potential towards broadband, compact and effi cient communication links and circuits.

422 citations


Journal ArticleDOI
TL;DR: In this paper, the authors presented the first optical modulation at 50 Gb/s with a 3.1dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer.
Abstract: Optical modulators formed in silicon are the keystone to many low cost optical applications. Increasing the data rate of the modulator benefits the efficiency of channel usage and decreases power consumption per bit of data. Silicon-based modulators which operate via carrier depletion have to the present been demonstrated at data rates up to 40 Gb/s; however, here we present for the first time optical modulation at 50 Gb/s with a 3.1-dB extinction ratio obtained from carrier depletion based phase shifter incorporated in a Mach-Zehnder interferometer. A corresponding optical insertion loss of approximately 7.4 dB is measured.

413 citations


Journal ArticleDOI
TL;DR: In this paper, the authors show that the bandwidth of a 3D gold helices can be increased to 1.5 octaves by tapering the gold-helix radius.
Abstract: We have previously shown that square arrays of three-dimensional gold helices can serve as compact broadband circular polarizers. Here, we show by heuristic reasoning supported by numerical calculations that the bandwidth of the device can realistically be increased to 1.5 octaves by tapering the gold-helix radius. The tapering also improves the extinction ratio. Depending on the side from which light impinges onto the tapered helices, the polarization conversions are different. Therefore, the structure is either optimal as polarizer or as analyzer. Corresponding structures for the infrared spectral range are fabricated by direct laser writing and gold electroplating.

193 citations


Journal ArticleDOI
TL;DR: The optical performances of the all-optical switching based on Yb3+-doped fiber Bragg grating (FBG) are investigated under the case of self- phase modulation (SPM) and cross-phase modulation (XPM) and the optical bistability of FBG under different parameters is investigated.
Abstract: The optical performances of the all-optical switching based on Yb3+-doped fiber Bragg grating (FBG) are investigated under the case of self-phase modulation (SPM) and cross-phase modulation (XPM). For the SPM case, the optical bistability of FBG under different parameters is investigated. It shows that the width of the hysteresis loop and threshold switching power are strongly dependent on the fiber grating length, fiber grating detuning, and coupling constant. For the XPM case, the expressions of the threshold switching power in the different detuning range are given. The influence of parameters about different detuning and coupling constant to the threshold switching power and extinction ratio are also studied. In comparison with the SPM case, the switching power of FBG under XPM case can be reduced to less than 20 mW by optimizing the parameters of FBG.

165 citations


Journal ArticleDOI
TL;DR: A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption.
Abstract: A fully-integrated, silicon photonic transceiver is demonstrated in a silicon-on-insulator process using photonic microring resonator modulators for low power consumption. The trade-offs between bandwidth and extinction ratio are discussed and motivate the use of transmit pre-emphasis for ring modulators to increase the interconnect data rate. The transmitter and receiver is demonstrated to data rates of 25 Gb/s with a BER of 10 ^-12. The total power consumption of the transceiver is 256 mW and demonstrates a link efficiency of 10.2 pJ/bit excluding laser power. At 25 Gb/s, the driver operates at 7.2 pJ/bit.

163 citations


Journal ArticleDOI
TL;DR: Finite-difference time-domain simulation indicates that the proposed device can provide large extinction ratio with low insertion loss for the TE mode, and a very compact and broadband TE-pass polarizer can be implemented.
Abstract: Hybrid plasmonic waveguides consisting of a metal plane separated from a high-index medium by a low-index spacer have recently attracted much interest. Here we show that, by suitably choosing the dimensions and material properties of the hybrid waveguide, a very compact and broadband TE-pass polarizer can be implemented. Finite-difference time-domain simulation indicates that the proposed device can provide large extinction ratio with low insertion loss for the TE mode.

151 citations


Journal ArticleDOI
TL;DR: A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated, demonstrating the excellent performance of the novel doping profile.
Abstract: A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal–oxide–semiconductor processes and provides low VπLπs of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 1017 cm−3. The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.

143 citations


Journal ArticleDOI
TL;DR: In this article, an all-photonic, non-volatile memory and processing element based on phase-change thin-films deposited onto nanophotonic waveguides was proposed.
Abstract: We propose an all-photonic, non-volatile memory, and processing element based on phase-change thin-films deposited onto nanophotonic waveguides. Using photonic microring resonators partially covered with Ge2Sb2Te5 (GST) multi-level memory operation in integrated photonic circuits can be achieved. GST provides a dramatic change in refractive index upon transition from the amorphous to crystalline state, which is exploited to reversibly control both the extinction ratio and resonance wavelength of the microcavity with an additional gating port in analogy to optical transistors. Our analysis shows excellent sensitivity to the degree of crystallization inside the GST, thus providing the basis for non-von Neumann neuromorphic computing.

137 citations


Journal ArticleDOI
Hao Xu1, Xi Xiao1, Xianyao Li1, Yingtao Hu1, Zhiyong Li1, Tao Chu1, Yude Yu1, Jinzhong Yu1 
TL;DR: A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions that enabled both high modulation efficiency and low doping-induced loss by applying a relatively low doping concentration.
Abstract: A high speed silicon Mach-Zehnder modulator is proposed based on interleaved PN junctions This doping profile enabled both high modulation efficiency of VπLπ = 15~20 V·cm and low doping-induced loss of ~10 dB/cm by applying a relatively low doping concentration of 2 × 1017 cm−3 High speed operation up to 40 Gbit/s with 701 dB extinction ratio was experimentally demonstrated with a short phase shifter of only 750 μm

133 citations


Journal ArticleDOI
TL;DR: In this article, a passive integrated optical circuit for mode-multiplexing and demultiplexing six channels, LP01 and LP11 modes in a few-moded fiber, is designed and tested.
Abstract: A novel passive integrated optical circuit for mode-multiplexing and demultiplexing six channels, LP01 and LP11 modes in a few-moded fiber, is designed and tested. A push-pull solution is proposed and demonstrated to excite the LP11 modes with a high extinction ratio. The circuit can outperform present bulk-optics solutions through its compactness and stability, and it has the potential advantages of high coupling efficiency and excellent mode crosstalk suppression.

132 citations


Journal ArticleDOI
TL;DR: A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window and large signal measurements show clearly open eye diagrams at 50 Gb/s.
Abstract: A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

Journal ArticleDOI
TL;DR: In this article, a compact polarization beam splitter based on an asymmetrical Mach-Zehnder interferometer (MZI) on a sub-micron silicon-on-insulator platform is demonstrated experimentally.
Abstract: A compact polarization beam splitter based on an asymmetrical Mach-Zehnder interferometer (MZI) on a sub-micron silicon-on-insulator platform is demonstrated experimentally. The present MZI polarization beam splitter (PBS) is fabricated with a double-etching process and the deeply-etched region includes the MZI arms and the multimode- interference (MMI) couplers. In this way, the birefringence of the MZI arms and the power splitting ratio of the MMI coupler become insensitive to the etching depth, which makes the fabrication easier. The 2×2 MMI couplers are optimized to be polarization-insensitive and have a balanced ratio (50:50) for both polarizations. The measured extinction ratio of the fabricated MZI PBS is higher than 10 dB in the wavelength range from 1.54 to 1.58 μm.

Journal ArticleDOI
TL;DR: Two low-loss silicon optical modulators are demonstrated, based on the carrier depletion effect in a pipin diode, to generate a good compromise between high efficiency, speed and low optical loss.
Abstract: 40 Gbit/s low-loss silicon optical modulators are demonstrated. The devices are based on the carrier depletion effect in a pipin diode to generate a good compromise between high efficiency, speed and low optical loss. The diode is embedded in a Mach-Zehnder interferometer, and a self-aligned fabrication process was used to obtain precise localization of the active p-doped region in the middle of the waveguide. Using a 4.7 mm (resp. 0.95 mm) long phase shifter, the modulator exhibits an extinction ratio of 6.6 dB (resp. 3.2 dB), simultaneously with an optical loss of 6 dB (resp. 4.5 dB) at the same operating point.

Journal ArticleDOI
TL;DR: An ultrashort integrated polarization splitter using a hybrid plasmonic waveguide as the middle waveguide in a three-core arrangement to achieve large birefringence, allowing only transverse-magnetic polarized light to directionally couple to the cross port of the directional coupler.
Abstract: We design and experimentally demonstrate an ultrashort integrated polarization splitter on silicon-on-insulator (SOI) platform. Our polarization splitter uses a hybrid plasmonic waveguide as the middle waveguide in a three-core arrangement to achieve large birefringence, allowing only transverse-magnetic (TM) polarized light to directionally couple to the cross port of the directional coupler. Finite-difference time-domain (FDTD) and eigenmode expansive (EME) calculations show that the splitter can achieve an extinction ratio of greater than 15 dB with less than 0.5 dB insertion losses. The polarization splitter was fabricated on SOI platform using standard complementary metal-oxide-semiconductor (CMOS) technology and measured at telecommunications wavelengths. Extinction ratios of 12.3 dB and 13.9 dB for the transverse-electric (TE) and TM polarizations were obtained, together with insertion losses of 2.8 dB and 6.0 dB.

Journal ArticleDOI
TL;DR: The high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration demonstrates the potentiality of Ge/ SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.
Abstract: We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally demonstrated from a 3 µm wide and 90 µm long Ge/SiGe MQW waveguide. The modulator exhibits a high extinction ratio of more than 10 dB over a wide spectral range. Moreover with a swing voltage of 1 V between 3 and 4 V, an extinction ratio as high as 9 dB can be obtained with a corresponding estimated energy consumption of 108 fJ per bit. This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.

Journal ArticleDOI
Daoxin Dai1
TL;DR: In this article, a short polarization beam splitter (PBS) is presented based on an asymmetrical evanescent coupling system, which consists of a narrow input waveguide, a narrow output waveguide and a wide middle optical waveguide between them.
Abstract: A short polarization beam splitter (PBS) is presented based on an asymmetrical evanescent coupling system, which consists of a narrow input waveguide, a narrow output waveguide, and a wide middle optical waveguide between them. The width of the waveguides is designed so that the phase-matching condition is satisfied for the TM fundamental (TM0) mode in the narrow input/output waveguide and the first higher order TM (TM1) mode in the wide middle waveguide. Meanwhile, there is a significant phase mismatch for the case with TE polarization. Therefore, for the launched TE polarized light, almost no coupling happens when it goes through the coupling region and finally the TE polarized light is output from the through port. For the launched TM0 mode in the narrow input waveguide, it is completely coupled to the TM1 mode in the wide middle waveguide by choosing the optimal length of the coupling region. Furthermore, the TM1 mode excited in the wide middle waveguide is then coupled to the TM0 mode in the narrow output waveguide through the evanescent coupling between them. A short (~25 μm long) PBS is designed based on silicon-on-insulator nanowires, while the gap width is chosen as large as 300 nm to make the fabrication easy. Numerical simulations show that the present PBS has a good fabrication tolerance for the variation of the waveguide width (more than ± 20 nm) and a broadband ( ~ 50 nm) for an extinction ratio of >; 15 dB.

Journal ArticleDOI
TL;DR: The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported and the polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm.
Abstract: The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is −0.7 dB and the 3 dB bandwidth is 26 nm.

Journal ArticleDOI
TL;DR: A high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide is demonstrated, a key building block for optical interconnection applications.
Abstract: We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm2, an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.

Journal ArticleDOI
TL;DR: In this article, a novel zigzag PN junction providing a modulation efficiency of 3.85× 10-5/V and a resistance-capacitance bandwidth of 51 GHz was proposed and demonstrated.
Abstract: We experimentally demonstrate silicon microring modulators with >;40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85× 10-5/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of ~ 8000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.

Journal ArticleDOI
TL;DR: In this paper, the transmitter and receiver circuits for a 10-Gbps single-ended optical link in a 40-nm CMOS technology are described, and the circuits are bonded using low-parasitic micro-solder bumps to silicon photonic devices on a 130-nm SOI platform.
Abstract: We describe transmitter and receiver circuits for a 10-Gbps single-ended optical link in a 40-nm CMOS technology. The circuits are bonded using low-parasitic micro-solder bumps to silicon photonic devices on a 130-nm SOI platform. The transmitter drives oval resonant ring modulators with a 2-V swing and employs static thermal tuners to compensate for optical device process variations. The receiver is based on a transimpedance amplifier (TIA) with 4-kΩ gain and designed for an input power of - 15 dBm, a photodiode responsivity of 0.7 A/W, and an input extinction ratio of 6 dB. It employs a pair of interleaved clocked sense-amplifiers for voltage slicing and uses a DLL with phase adjustment for centering the clock in the data eye. Periodic calibration allows for adjustment of both voltage and timing margins. At 10 Gbps, the transmitter extinction ratio exceeds 7 dB and, excluding thermal tuning and laser power, it consumes 1.35 mW. At the same datarate, the receiver consumes 3.95 mW. On-chip PRBS generators and checkers with 231-1 sequences confirm operation at a BER better than 10-12.

Journal ArticleDOI
X. Sun1, Muhammad Alam1, S.J. Wagner1, J.S. Aitchison1, Mo Mojahedi1 
TL;DR: The transverse electric (TE)-pass polarizer using the recently proposed hybrid plasmonic waveguide is experimentally demonstrate; its fabrication is completely compatible with silicon-on-insulator technology, and its performance compares favorably against previously reported silicon-based integrated optic TE-pass polarizers.
Abstract: We experimentally demonstrate a transverse electric (TE)-pass polarizer using the recently proposed hybrid plasmonic waveguide. The device consists of a silicon film separated from a chromium layer by a silica spacer. The device was characterized using a tunable laser in the 1.52–1.58 μm wavelength range. For a 30 μm long polarizer, the extinction ratio in this wavelength range varies from 23 to 28 dB and the insertion loss for the TE mode is 2–3 dB. The device is compact; its fabrication is completely compatible with silicon-on-insulator technology, and its performance compares favorably against previously reported silicon-based integrated optic TE-pass polarizers.

Journal ArticleDOI
TL;DR: A high-speed silicon modulator based on cascaded double microring resonators that can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device is demonstrated.
Abstract: A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device.

Journal ArticleDOI
TL;DR: A multi-mode interference-based optical gate switch using a Ge(2)Sb( 2)Te(5) thin film with a diameter of only 1 µm is reported, which had a very wide operating wavelength range and self-holding characteristics were confirmed by observing the dynamic responses.
Abstract: We report a multi-mode interference-based optical gate switch using a Ge2Sb2Te5 thin film with a diameter of only 1 µm. The switching operation was demonstrated by laser pulse irradiation. This switch had a very wide operating wavelength range of 100 nm at around 1575 nm, with an average extinction ratio of 12.6 dB. Repetitive switching over 2,000 irradiation cycles was also successfully demonstrated. In addition, self-holding characteristics were confirmed by observing the dynamic responses, and the rise and fall times were 130 ns and 400 ns, respectively.

Journal ArticleDOI
TL;DR: This work presents what is to the authors' knowledge the first active-passive monolithically integrated 16×16 switch, where the active InP/InGaAsP elements provide semiconductor optical amplifier gates in a multistage rearrangeably nonblocking switch design.
Abstract: We present what is to our knowledge the first active-passive monolithically integrated 16×16 switch. The active InP/InGaAsP elements provide semiconductor optical amplifier gates in a multistage rearrangeably nonblocking switch design. Thirty-two representative connections, including the shortest, longest, and comprehensive range of intermediate paths have been assessed across the switch circuit. The 10 Gb/s signal routing is demonstrated with an optical signal-to-noise ratio up to 28.3 dB/0.1 nm and a signal extinction ratio exceeding 50 dB.

Journal ArticleDOI
TL;DR: Unique four-state feature of the cell is obtained and their applications in optical logic devices are discussed.
Abstract: A diffraction grating is proposed by periodically defining the liquid-crystal director distribution to form alternate parallel aligned and twist nematic regions in a cell placed between two crossed polarizers. Based on the combined phase and amplitude modulation, both 1D and 2D tunable gratings are demonstrated. Low voltage ON/OFF switching of 1st order diffracted light with extinction ratio over 80 is achieved within a small voltage interval of 0.15 Vrms. Unique four-state feature of the cell is obtained and their applications in optical logic devices are discussed.

Journal ArticleDOI
TL;DR: The design of a division-of-focal-plane polarization imaging sensor, which is also spectrally selective in the visible regime, is presented and its extensive spectral and polarimetric characterization is described.
Abstract: Current division-of-focal-plane polarization imaging sensors can perceive intensity and polarization in real time with high spatial resolution, but are oblivious to spectral information. We present the design of such a sensor, which is also spectrally selective in the visible regime. We describe its extensive spectral and polarimetric characterization. The sensor has a pixel pitch of 5 µm and an imaging array of 168 by 256 elements. Each element comprises spectrally sensitive vertically stacked photodetectors integrated with a 140 nm pitch nanowire linear polarizer. The sensor has a maximum measured SNR of 45 dB, extinction ratio of ~3.5, QE of 12%, and linearity error of 1% in the green channel. We present sample spectral-polarization images.

Journal ArticleDOI
TL;DR: In this article, a novel strain sensor is proposed and demonstrated by employing a modified photonic crystal fiber (PCF)-based Mach-Zehnder interferometer, in which a collapsed region is introduced at the middle point of the PCF to improve the extinction ratio.
Abstract: In this paper, a novel strain sensor is proposed and demonstrated by employing a modified photonic crystal fiber (PCF)-based Mach-Zehnder interferometer, in which a collapsed region is introduced at the middle point of the PCF to improve the extinction ratio. Experimental results show that this proposed structure has a high sensitivity of 11.22 over a range of 1.28 and high-temperature stability.

Journal ArticleDOI
TL;DR: The results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.
Abstract: We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ∙L figure of merit of 0.12V∙mm, and an extinction ratio of −23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.

Journal ArticleDOI
TL;DR: In this article, an electro-optically tunable switch using tenth-order coupled-microring resonators in silicon-on-insulator using complementary metaloxide-semiconductor fabrication technology was demonstrated.
Abstract: We demonstrate an electro-optically (EO) tunable switch using tenth-order coupled-microring resonators in silicon-on-insulator using complementary metal-oxide-semiconductor fabrication technology. The measured drop-port transmission spectra show box-like transmission passband with ~100-GHz bandwidth and ~50-dB extinction ratio. With a DC voltage supply to the integrated p-i-n diodes surrounding the microrings, the optical switch shows, respectively, ~10 and ~45-dB on/off ratios from throughputand drop-port. The measured EO switching times are ~1 ns upon a 1.2-Vpp low-speed driving signal and a DC power consumption of ~37 mW. Up to 30-Gb/s pseudorandom binary sequence (231-1) signal transmissions suggest high-data-rate signal switching capability.

Journal ArticleDOI
TL;DR: A novel ultracompact (5 μm) hybrid plasmonic polarization rotator operating at telecommunication wavelength for integrated silicon photonic circuits with low total insertion losses is proposed.
Abstract: We propose a novel ultracompact (5 μm) hybrid plasmonic polarization rotator operating at telecommunication wavelength for integrated silicon photonic circuits. The polarization mode of a silicon waveguide is rotated with >14 dB polarization extinction ratio and low total insertion losses of 2.1 dB.