Topic
Extinction ratio
About: Extinction ratio is a research topic. Over the lifetime, 8541 publications have been published within this topic receiving 111908 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, a modified transverse holographic method employing He Ne laser light at a wavelength of λw = 633 nm allows the writing of Bragg grating reflectors in the 1550 nm band.
Abstract: The inscription of Bragg gratings in chalcogenide (As2Se3) wires with sub-wavelength diameter is proposed and demonstrated. A modified transverse holographic method employing He Ne laser light at a wavelength of {\lambda}w = 633 nm allows the writing of Bragg grating reflectors in the 1550 nm band. The gratings reach an extinction ratio of 40 dB in transmission and a negative photo-induced index change of \delta n~0.01. The inscription of Bragg gratings in chalcogenide microwires will enable the fabrication of new devices with applications in nonlinear optics, and sensing in the near-to-mid-infrared region of wavelengths.
33 citations
TL;DR: A silicon electro-optic modulator based on coupled microring resonators that has wide optical bandwidth, high extinction ratio and low insertion loss and can provide a feedback signal for active control of the modulation wavelength is proposed.
Abstract: A silicon electro-optic modulator based on coupled microring resonators is proposed. The dual-ring modulator has wide optical bandwidth, high extinction ratio and low insertion loss. A simple integrated circuit connecting the two rings allows for fast modulation speed of >40 Gbit/s. This device has both improved optical and electrical performance over a single-ring modulator. The dual-ring modulator can provide a feedback signal for active control of the modulation wavelength.
33 citations
TL;DR: In this paper, the authors report experimental demonstration and modeling of all-optical on-chip non-return-to-zero (NRZ) to pseudo-return to zero (PRZ) format conversion using narrow-band silicon microring resonator-based notch filters.
Abstract: We report experimental demonstration and modeling of all-optical on-chip non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using narrow-band silicon microring resonator-based notch filters. Our proof-of-principle experiment using a carrier-injection-based tunable silicon microring resonator demonstrates NRZ-to-PRZ conversion at 3.6 Gbit/s. Our Fourier-transform-based modeling reveals in detail the format conversion dependence on the microring resonance Q factor, extinction ratio, phase response, and NRZ signal transition times, assuming signal format conversion of 40 Gbit/s.
33 citations
TL;DR: In this paper, photobleached polymer waveguides supporting both TE and TM modes are integrated with poling induced polymer waveguide that support either TE or TM modes, and the measured excess loss is less than 0.5 dB and polarization extinction ratios for TM-pass and TE-pass polarizers are 20.7 dB and 17.1 dB, respectively.
Abstract: In order to demonstrate polymeric waveguide polarizers, photobleached polymer waveguides supporting both TE and TM modes are integrated with poling induced polymer waveguides that support either TE or TM modes. Fabrication parameters like UV exposures and poling voltages are controlled to reduce excess losses due to the mode profile mismatch between the connected waveguides. A TM-pass polarizer is realized by poling the polymer in the vertical direction. For TE-pass polarizer the polymer is poled horizontally by using four poling electrodes which enhance the uniformity of the poling field direction. The measured excess loss is less than 0.5 dB, and polarization extinction ratios for TM-pass and TE-pass polarizers are 20.7 dB and 17.1 dB, respectively.
33 citations
TL;DR: In this article, a detailed Si ring modulator model is derived, which is used to fit and benchmark the measured modulation performance of both ring modulators at 10 Gb/s and 1 Vpp drive swing.
Abstract: We present a rigorous comparison between Si ring modulators based on interdigitated and lateral p-n junctions. A detailed Si ring modulator model is derived, which is used to fit and benchmark the measured modulation performance of both ring modulators. At 10 Gb/s and 1 Vpp drive swing, the interdigitated ring modulator is found to exhibit a superior extinction ratio at low insertion loss as compared to the lateral ring modulator, at the expense of a higher capacitive load. Design improvements are proposed to obtain 25-Gb/s operation with similar extinction ratio and low insertion loss in future devices. Such devices are attractive to enable power-efficient scaling of optical interconnects to 400 Gb/s and beyond.
33 citations