Showing papers on "Fabrication published in 1970"

Device structures and fabrication techniques for amorphous semiconductor switching devices

Abstract: The history of structures developed at ecd for amorphous switching and memory devices is outlined and traced from the original bulk contact structure to the present all-film photo-etched devices. The types of geometries used to cover the voltage range 2–200 V are discussed. The causes for instabilities observed in some amorphous semiconductor devices are analysed. The factors influencing yield of devices are discussed with specific reference to experience on arrays of 2500 devices per square inch.

Fabrication Stresses in Graphite-Resin Composites

Abstract: Residual thermal stresses are present in cross-plied graphite-epoxy composites due to the anisotropic thermal and mechanical properties of the individual layers. Experimental measurements and analytical calculations of the thermal stress induced in two different cross-plied composites during fabrication are presented and shown to be in good agreement. The occurrence of cracking in certain composites is explained in terms of the transverse tensile strength of the unidirectional composite layers and the stress developed during fabrication. Two approaches are presented to avoid cracking during fabrication.

Technique for the fabrication of discrete rc structure

Abstract: A TECHNIQUE FOR THE FABRICATION OF TANTALUM-BASED RESISTORS AND CAPACITORS ON A SINGLE SUBSTRATE MEMBER INVOLVES A SERIES OF PROCESS STEPS WHEREIN A LAYER OF TANTALUM NITRIDE AND A LAYER OF BETA-TANTALUM ARE SEQUENTIALLY DEPOSITED UPON A SUBSTRATE MEMBER AND SERVE AS THE RESISTOR AND CAPACITOR FILMS RESPECTIVELY OF THE DESIRED STRUCTURE, THE CAPACITOR FILM BEING CONVERTED TO A PROTECTIVE ANODIC OXIDE DURING THE COUSE OF THE PROCESSING.

Silicon and silicon-dioxide processing for high-frequency MESFET preparation

Abstract: Silicon wafer processing is described which provides submicrometer epitaxial layer on top of high-resistivity silicon substrates for fabrication of high-frequency metal-semiconductor field-effect transistors. Silicon-dioxide underetching at the border of an oxide window, performed in hydrogen at elevated temperatures, is one methodof realizing 1-micrometer device structures.

Technique for the fabrication of thin film capacitor including lead dioxide conductive films

Abstract: Lead dioxide films are deposited upon a substrate with mechanical properties such as to permit fabrication of capacitors in which they are used as the solid electrolyte over a metal oxide dielectric. The lead dioxide is produced by the oxidation of a divalent lead compound in solution by means of a persulfate.

Fabrication and characterization of metal carbide--graphite composites.

Abstract: Refractory metal carbide-graphite composites have been prepared by hot pressing and the effect of variation of composition and processing conditions on phase equilibration and physical properties such as flexural strength, hardness, thermal shock resistance, thermal expansion, and electrical resistivity has been studied. ZrC-C, HfC-C, VC-C, NbC-C, TaC-C, MoC-C and WC-C. found that the strength of all the composite materials investigated increased with increasing carbide content reaching a peak for the metal-carbide-graphite eutectic composition. ally linear relationship between electrical resistivity and flexural strength was found to be useful to calculate the strength level of the material and to understand the strengthening mechanism with increasing carbide content. The systems investigated include Tic-C, It has been

Engineering study of elevated temperature solar cell panel fabrication techniques

Abstract: Solar cell array fabrication for operation at 173- 383 K, discussing honeycomb sandwich substrate using epoxy-novolac-fiberglass facings and Al core

Material and Fabrication Development and Application Studies of Aluminum-Boron-Stainless Steel Composites

Abstract: The recent development of a new composite material with superior properties for structural applications is described. The development consisted of selection of matrix and filament materials, the fabrication of a number of composite panels qualification testing, evaluation of secondary fabrication methods and design application studies. It was demonstrated that the new composite material, aluminum-boron-stainless steel (A1-B-SS), could be made in various forms, shapes and sizes, that it possessed very desirable mechanical and physical properties, and that it could be satisfactorily cut, machined, formed and joined by a variety of methods. The potential weight savings (typically 30–45 percent) and other attractive properties make the A1-B-SS composite particularly promising for a number of structural applications.© 1970 ASME

Fabrication of thin single crystal layers

Abstract: A fabrication technique is described for making thin free single crystal layers of semiconductors. This technique has the advantage that the sample thickness can be continuously and easily monitored without removing the sample from the polishing flat. The method is described for the case of a 5 μm thick germanium sample, but can in principle be applied to a wide range of materials.

Fabrication of integrated optical circuits

Abstract: IN THIS DISCLOSURE A PROCESS IS DESCRIBED FOR THE FABRICATION OF OPTICAL INTEGRATED CIRCUITS. TTHE PROCESS CONSISTS OF FORMING A FILM OF A METAL OR ALLOY ON A SUBSTRATE, REMOVING PART OF THE FILM BY PHOTTOLITHOGRAPHIC TECHNIQUES SO AS TO FORM THE DESIRED PATTERN, AND THEN OXIDIZING THIS FILM TO THE CORRESPONDING METAL OXIDE. THE METAL OXIDE FILM ON THE SUBSTRATE FORMS THE OPTICAL INTEGRATED CIRCUIT. AN ADVANTAGE OF THIS PROCESS IS THAT PHOTOLITHOGRAPHIC TECHNIQUES CAN BE USED TO PRODUCE QUITE COMPLICATED PATTERNS OF SMALL DIMENSIONS.

Oxide ceramic housing for electrical - circuits

Abstract: High purity (>90% pref. >96) alumina or beryllium oxide (>90%) may be used for the fabrication of plates of less than 2mm thickness, these plates being metallized, as required, using known techniques so that the plates may be assembled using brazing or welding, into sealed high temp. housings. The housings are suitable for very high and ultra high frequencies.