Showing papers on "Fabrication published in 1976"
TL;DR: In this article, a contamination resist pattern is written with a 5.A 45-keV scanning electron beam in a 100-A-thick Au-Pd film supported by a carbon foil.
Abstract: Metal structures 100 A high with sharply defined linewidths of 80 A have been produced using an electron‐beam fabrication process. A contamination resist pattern is written with a 5‐A 45‐keV scanning electron beam in a 100‐A‐thick Au‐Pd film supported by a 100‐A carbon foil. The unprotected Au‐Pd is removed by dc ion etching with 1‐keV Ar ions. Unlike most electron‐beam microfabrication processes, the resolution of the resulting structure is not limited by electron scattering, but by the grain size of the metal films. These structures should have direct application in a large number of device fabrication problems in electron and x‐ray beam technology and they should provide masks for other microfabrication processes such as x‐ray lithography.
298 citations
Patent•
26 Oct 1976TL;DR: In this paper, a method is provided which includes the steps of selectively doping a semiconductor substrate of one conductivity type to form discrete regions of opposite conductivity types, followed by selective epitaxial growth to fill the windows of the diffusion mask, whereby the epitaxially grown regions are inherently characterized by exact alignment with the doped regions.
Abstract: In the fabrication of semiconductor devices, a method is provided which includes the steps of selectively doping a semiconductor substrate of one conductivity type to form therein discrete regions of opposite conductivity type, followed by selective epitaxial growth to fill the windows of the diffusion mask, whereby the epitaxially grown regions are inherently characterized by exact alignment with the doped regions. The self-aligned epitaxial structure is then subjected to further processing in accordance with numerous alternate schemes to provide a wide variety of devices.
38 citations
Patent•
11 May 1976TL;DR: In this paper, a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth is described. But this process requires the use of a special type of molecular beam.
Abstract: The present invention discloses a process for fabrication of dielectric optical waveguide devices by utilizing selective epitaxial growth. Concentrated energy such as an electron or laser beam is focused on a predetermined region on the surface of a substrate during the epitaxial growth with the application of molecular beams so that the mixed crystal grown in the irradiated region may have a chemical composition different from that of the mixed crystal grown on the non-irradiated region. Since this process permits to overlaying the embedded waveguides one upon another, complex optical waveguide devices can be fabricated in a simple manner.
30 citations
Patent•
13 Dec 1976TL;DR: In this article, a composite glass article for channel plate fabrication comprising a glass matrix in which is encased an array of leachable glass core elements, the core elements being composed of a BaO-B 2 O 3 -SiO 2 glass exhibiting improved leaching characteristics as well as thermal expansion and high temperature softening properties compatible with the glass matrix, is described.
Abstract: A composite glass article for channel plate fabrication comprising a glass matrix in which is encased an array of leachable glass core elements, the core elements being composed of a BaO-B 2 O 3 -SiO 2 glass exhibiting improved leaching characteristics as well as thermal expansion and high temperature softening properties compatible with the glass matrix, is described.
21 citations
Patent•
27 Dec 1976
TL;DR: In this paper, a method and machine for fabricating plasticboard wherein areas of bonding are created with localized heating and pressure is described, and the machine is used to fabricate the plastic board.
Abstract: Method and machine for fabricating plasticboard wherein areas of bonding are created with localized heating and pressure.
19 citations
Patent•
19 Nov 1976
TL;DR: In this paper, the authors describe a method of fabrication of material suited for use in a thermal reactor according to which austenitic stainless steel is dipped in a bath of molten aluminium in addition of silicon and then receives heat treatment in specific temperature ranges, whereby preferential diffusion of silicon in the steel material is effected.
Abstract: Method of fabrication of material suited for use in a thermal reactor according to which austenitic stainless steel is dipped in a bath of molten aluminium in addition of silicon and then receives heat treatment in specific temperature ranges, whereby preferential diffusion of silicon in the steel material is effected. The diffused silicon prevents diffusion of aluminium and ensures that thickness of plating layers remains at a value such that distortion of a plated element does not occur even after prolonged service.
18 citations
IBM1
TL;DR: In this article, a high-resolution technique is described for the experimental fabrication of Permalloy patterns for magnetic bubble circuits having linewidths as small as 3000 A. The system includes a computer-controlled electron beam, automatic registration, a modified field-stitching method, and exposure control to compensate for proximity effects.
Abstract: A high-resolution technique is described for the experimental fabrication of Permalloy patterns for magnetic bubble circuits having linewidths as small as 3000 A. The system includes a computer-controlled electron beam, automatic registration, a modified field-stitching method, and exposure control to compensate for proximity effects. Patterns are formed either by electroplating or by evaporation. The system can be used either for directly writing on bubble wafers or for fabricating masks for x-ray or conformable-mask printing.
16 citations
Proceedings Article•
01 Jan 1976TL;DR: Several uses of thin film technology in solar cell fabrication are discussed in this article, where Wrap-around contacts are obtained by first printing and firing a dielectric over the edge and subsequently applying a low-firing temperature conductor.
Abstract: Several uses of thick-film technology in solar cell fabrication are discussed. Wrap-around contacts are obtained by first printing and firing a dielectric over the edge and subsequently applying a low-firing temperature conductor. Interconnection of cells into arrays can be achieved by printing and co-firing thick-film pastes, soldering, or with heat-curing conductive epoxies on low-cost substrates. Despite ongoing research, printed (thick) film vitreous protective coatings do not yet offer sufficient optical uniformity and transparency for use on silicon. Ohmic contacts on n- and p-type silicon are considered.
16 citations
Patent•
IBM1
TL;DR: In this paper, stress free dielectric layers are obtained by E-gun evaporating borosilicate glass from a molten pool of borosile having an area of at least 2cm 2 up to about 10cm 2 with the substrate for the layers being maintained at from 200° C to 300° C and the evaporation rate being 40 to 80 A/sec. at approximately 10 inches from the molten pool.
Abstract: The construction of the dielectric layer of a panel used in making a gas panel display by an E-gun evaporation process in the same evacuated chamber that deposits an electron-emissive layer on the panel so as to obtain increased efficiency in the fabrication and improved operating characteristics of the gas panel. Stress free dielectric layers are obtained by E-gun evaporating borosilicate glass from a molten pool of borosilicate having an area of at least 2cm 2 up to about 10cm 2 with the substrate for the layers being maintained at from 200° C to 300° C and the evaporation rate being 40 to 80 A/sec. at approximately 10 inches from the molten pool.
14 citations
TL;DR: In this article, a photolithographic technique was described for the fabrication of superconducting thin films to detect high frequency second sound in liquid helium, which was used for the first time.
Patent•
30 Aug 1976
TL;DR: The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulators of small thickness which are transparent to the beam, and in connecting each electrode to a control line as discussed by the authors.
Abstract: The fabrication of a charge-coupled device consists in forming an insulating layer in the form of a periodic series of insulating steps, in depositing a metallic layer on alternate steps so as to form electrodes, in implanting regions doped with a type opposite to the substrate into the surface of the semiconductor by directing an ion beam through the insulating steps of small thickness which are transparent to the beam, and in connecting each electrode to a control line.
Patent•
02 Mar 1976TL;DR: An improved and simplified method of fabricating field effect transistors in metal oxide semiconductor integrated circuits advantageously employs the differential growth rate, under certain temperature conditions, between oxide on silicon wherein phosphorous has been diffused, and on silicon without such diffusion as discussed by the authors.
Abstract: An improved and simplified method of fabricating field effect transistors in metal oxide semiconductor integrated circuits advantageously employs the differential growth rate, under certain temperature conditions, between oxide on silicon wherein phosphorous has been diffused, and on silicon without such diffusion. The improved method of fabrication reduces the number of fabrication steps required, while simultaneously producing field effect transistors with superior operation speeds.
Patent•
24 Dec 1976
TL;DR: In this article, the authors describe how to fabricate a semiconductor device which is excellent in durability against erosion and in securing separation of each wiring and also has a part of metal layer inside.
Abstract: PURPOSE:How to fabricate a semiconductor device which is excellent in durability against erosion and in securing separation of each wiring and also has a part of metal layer inside.
Patent•
15 Dec 1976
TL;DR: A fabrication method of basic plate for diode device,t hat assures to have good crystaline sillicone diode layer by performing epitaxial growth after thermal process for insulation material basic plate at mixed gas with oxygen and chlorine as discussed by the authors.
Abstract: PURPOSE:A fabrication method of basic plate for diode device,t hat assures to have good crystaline sillicone diode layer by performing epitaxial growth after thermal process for insulation material basic plate at mixed gas with oxygen and chlorine.
Patent•
17 Dec 1976
TL;DR: In this article, a high density Fe-Al-Si magnetic alloy was obtained by mixing Fe powder with Fe-Si alloy powder of a high Si and Al content and compression molding and calcinating them.
Abstract: PURPOSE: To obtain a high density Fe-Al-Si magnetic alloy by mixing Fe powder with Fe-Al-Si alloy powder of a high Si and Al content and compression molding and calcinating them. COPYRIGHT: (C)1978,JPO&Japio
Proceedings Article•
01 Jan 1976
Patent•
15 Dec 1976
TL;DR: A diode device fabrication method that simplifies manufacturing process and further promotes fabrication yield at formation of a diode devices insulating between elements by V type groove is presented in this article.
Abstract: PURPOSE:A diode device fabrication method, that simplifies manufacturing process and further promotes fabrication yield at formation of a diode device insulating between elements by V type groove
02 Jun 1976
Patent•
15 Dec 1976
TL;DR: In this article, a diode device fabrication method was proposed that simplifies process by utilizing photo resist film as a mask while making daubed multi-crystal silicone formed by ion injection as diffusion source.
Abstract: PURPOSE:A diode device fabrication method, that simplifies process by utilizing photo-resist film as a mask while making daubed multi-crystal silicone formed by ion injection as diffusion source.
Patent•
24 Dec 1976
TL;DR: In this article, the authors aim to increase fabrication efficiency and ease fabrication of pipes with thin wall thickness of l mm and thinner for a multi-pass pipe by increasing fabrication efficiency.
Abstract: PURPOSE:Increasing fabrication efficiency and easing fabrication of pipes with thin wall thickness of l mm and thinner for a multi-pass pipe.
Patent•
27 Oct 1976
TL;DR: In this article, the authors proposed a fabrication technique of a transistor to lower the resistivity of the base region as well as to prevent the push-out effect of base layer caused by emitter diffusion, and increase the reliability of the electrodes.
Abstract: PURPOSE:Fabrication technique of a transistor.....to lower the resistivity of the base region as well as to prevent the push-out effect of the base layer caused by emitter diffusion, and to increase the reliability of the electrodes.