Showing papers on "Fabrication published in 2000"
TL;DR: In this article, the authors report on the resolution limits of EBL in the conventional polymethylmethacrylate (PMMA) organic resist and show that resolution can be pushed below 10 nm for isolated features and dense arrays of periodic structures can be fabricated at a pitch of 30 nm, leading to a density close to 700 Gbit/in2.
1,017 citations
TL;DR: In this article, different thin-film deposition methods for oxides, especially for stabilized zirconia and compares them with regard to SOFC applications are presented. And each method is described with its special technical features and examples of components for fuel cells are given.
552 citations
TL;DR: Inorganic solids with wide bandgaps are usually classified as electrical insulators and are used in industry as insulators, dielectrics, and optical materials as mentioned in this paper, however, interest in these wide-gap oxides as conductive materials has not been strong.
Abstract: Inorganic solids with wide bandgaps are usually classified as electrical insulators and are used in industry as insulators, dielectrics, and optical materials. Many metallic oxides have wide bandgaps because of the significant contribution of ionic character to the chemical bonds between metallic cations and oxide ions. Their ionic nature simultaneously suppresses the formation of easily ionizable shallow donors or acceptors and enhances the localization of electrons and positive holes. Thus it is understandable that interest in these wide-gap oxides as conductive materials has not been strong.
472 citations
TL;DR: The fabrication of what is believed to be the first example of a two-dimensional (2D) nonlinear photonic crystal where the refractive index is constant but where the 2nd order nonlinear susceptibility is spatially periodic is reported.
Abstract: We report on the fabrication of what we believe is the first example of a two-dimensional (2D) nonlinear photonic crystal [Berger, Phys. Rev. Lett. 81, 4136 (1998)], where the refractive index is constant but where the 2nd order nonlinear susceptibility is spatially periodic. Such crystals allow for efficient quasi-phase-matched 2nd harmonic generation using multiple reciprocal lattice vectors. External 2nd harmonic conversion efficiencies >60% were measured with picosecond pulses. The fabrication technique is extremely versatile and should allow for the fabrication of a broad range of 2D crystals including quasicrystals.
450 citations
TL;DR: SiLK resin this article is a solution of a low-molecular-weight aromatic thermosetting polymer, which is used in the fabrication of interconnect structures such as the one shown in the Figure.
Abstract: For faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a new dielectric—SiLK resin, a solution of a low-molecular-weight aromatic thermosetting polymer—are reviewed and examples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, are given.
383 citations
Patent•
14 Mar 2000TL;DR: In this article, the authors proposed a method of forming reduced feature size spacers, where a semiconductor substrate has an area region, and a first spacer is constructed over a portion of the area region of the substrate.
Abstract: The invention relates to a method of forming reduced feature size spacers. The method includes providing a semiconductor substrate having an area region; patterning a first spacer over a portion of the area region of the substrate, the first spacer having a first thickness and opposing side portions; patterning a pair of second spacers, each second spacer adjacent to a side portion of the first spacer, each second spacer having a second thickness in opposing side portions, wherein the second thickness is less than the first thickness; removing the first spacer; patterning a plurality of third spacers, each third spacer adjacent to one of the side portions of one of the second spacers, each one of the third spacers having a third thickness, wherein the third thickness is less than the second thickness; and removing the second spacers. The invention also relates to a field of effect transistor. The transistor includes a semiconductor substrate having a source region and a drain region; a gate area of the substrate surface; a channel region in the substrate having a cross-sectional area defined by a portion of the gate area, a channel length measured accross a portion of the channel region between the source region and the drain region; and a trench formed in a portion of the channel region, the trench having a trench length substantially equivalent to the channel length.
306 citations
272 citations
TL;DR: In this paper, the authors present the design, fabrication, testing, and experimental results of a micromachined tactile sensor, which can be integrated with the tips of commercial endoscopic graspers.
Abstract: Present-day commercial endoscopic graspers do not have any built-in sensors, thus, the surgeon does not have the necessary tactile feedback to manipulate the tissue safely. This paper presents the design, fabrication, testing, and experimental results of a micromachined tactile sensor, which can be integrated with the tips of commercial endoscopic graspers. The prototype sensor consists of three layers. The top layer is made of micromachined silicon with a rigid tooth-like structure similar to the present-day endoscopic grasper. The bottom layer is made of flat Plexiglass serving as a substrate. Packaged between the Plexiglass and the silicon is a patterned Polyvinglidene Fluoride (PVDF) film. The proposed sensor exhibits high sensitivity, a large dynamic range, and a high signal-to-noise ratio. Through experimental results, it is shown that the magnitude and position of an applied force can be determined from the magnitude and slope of the output signals from the PVDF sensing elements. Structural analysis is also performed using the finite-element method, and the results are compared with the experimental analysis. The advantages and limitations of this sensor are also reported. A discussion of how the design of the sensor can be integrated with the design of an endoscopic grasper is also presented.
219 citations
TL;DR: In this paper, the authors present the SAMLAB-ARTICLE-2000-004 Record created on 2009-05-12, modified on 2016-08-08 and used for the purpose of research.
Abstract: Note: 243 Reference SAMLAB-ARTICLE-2000-004 Record created on 2009-05-12, modified on 2016-08-08
197 citations
Patent•
16 Mar 2000TL;DR: In this article, a large area, thin-film, flexible photovoltaic structure is described, as well as a general fabrication procedure, including a preferably roll-to-roll-type, process-chamber-segregated, "continuous motion" method for producing such a structure.
Abstract: A new, large-area, thin-film, flexible photovoltaic structure is disclosed, as well as a general fabrication procedure, including a preferably roll-to-roll-type, process-chamber-segregated, “continuous-motion”, method for producing such a structure. A special multi-material vapor-deposition environment is disclosed to implement an important co-evaporation, layer-deposition procedure performed in and as part of the fabrication procedure. A structural system adapted to create a vapor environment generally like that just referred to is disclosed, as is an organization of method steps involved in the generation of such a vapor environment. Also, a unique, vapor-creating, materials-distributing system, which includes specially designed heated crucibles with carefully arranged, spatially distributed, localized and generally point-like, heated-nozzle sources of different metallic vapors, and a special multi-fingered, comb-like, vapor-delivering manifold structure is shown.
197 citations
Patent•
29 Nov 2000
TL;DR: In this article, a method and apparatus for fabricating a 3D object from porous solid preform layers and at least a pore-filling material is presented, which includes providing a work surface parallel to an X-Y plane of a Cartesian coordinate system.
Abstract: A method and apparatus for fabricating a three-dimensional object from porous solid preform layers and at least a pore-filling material. The method includes: (a) providing a work surface parallel to an X-Y plane of a Cartesian coordinate system; (b) feeding a first porous solid preform layer to the work surface; (c) using dispensing devices to dispense a first pore-filling material onto predetermined areas of the first preform layer to at least partially fill in the pores in these areas (hardened areas) for forming the first section of the object; (d) feeding a second porous preform layer onto the first layer, dispensing a second pore-filling material onto predetermined areas of the second layer for forming the second section (the second pore-filling material being the same as or different than the first); (e) repeating the operations from (b) to (d) to stack up and build successive preform layers along the Z-direction for forming multiple layers of the object with the remaining un-hardened areas of individual layers staying as a support structure; (f) sequentially or simultaneously affix successive layers together to form a unitary body; and (g) removing the support structure by exposing the un-hardened areas of the unitary body to a support-collapsing environment, causing the 3-D object to appear.
Patent•
16 Mar 2000
TL;DR: In this paper, a large area, thin-film, flexible photovoltaic structure is described, as well as a general fabrication procedure, including a preferably roll-to-roll-type, process-chamber-segregated, "continuous motion" method for producing such a structure.
Abstract: A new, large-area, thin-film, flexible photovoltaic structure is disclosed, as well as a general fabrication procedure, including a preferably roll-to-roll-type, process-chamber-segregated, “continuous-motion”, method for producing such a structure. A special multi-material vapor-deposition environment is disclosed to implement an important co-evaporation, layer-deposition procedure performed in and as part of the fabrication procedure. A structural system adapted to create a vapor environment generally like that just referred to is disclosed, as is an organization of method steps involved in the generation of such a vapor environment. Also, a unique, vapor-creating, materials-distributing system, which includes specially designed heated crucibles with carefully arranged, spatially distributed, localized and generally point-like, heated-nozzle sources of different metallic vapors, and a special multi-fingered, comb-like, vapor-delivering manifold structure is shown.
TL;DR: In this paper, the authors present a system for the solid free-form fabrication of multiple ceramic actuators and sensors, where a part is built layer by layer, with each layer composed of roads of material forming the boundary and the interior of the layer.
Abstract: In this article we present the system that we have developed at Rutgers University for the solid freeform fabrication of multiple ceramic actuators and sensors. With solid free form fabrication, a part is built layer by layer, with each layer composed of roads of material forming the boundary and the interior of the layer. With our system, up to four different types of materials can be deposited in a given layer with any geometry. This system is intended for fabrication of functional parts; therefore the accuracy and precision of the fabrication process are of extreme importance.
TL;DR: In this article, the design, fabrication and characterisation of a novel humidity sensor is presented, which consists of a capacitor with a porous silicon dielectric, two thermoresistors and a refresh resistor.
Abstract: The design, fabrication and characterisation of a novel humidity sensor are presented. The device consists of a capacitor with a porous silicon dielectric, two thermoresistors and a refresh resistor. The porous silicon is formed with a back-end process underneath a meshed metal electrode, which is fabricated in the same layer as the thermo- and refresh resistors. Due to this concept, very thin porous silicon could be formed with reproducible and stable metal contacts. At the same time, both the response time and the overall fabrication yield of the devices could be improved. The properties of the sensor are modelled and demonstrated with several experimental results.
TL;DR: In this article, a modified NIL-technique for the fabrication of nm-structures is presented, based on the photopolymerization of special resits through a quartz mold.
TL;DR: In this paper, annealing of ZnO layers was done in N 2 or O 2 atmosphere and their effects were studied and it was shown that the number of interstitial Zn (Zn i ) and O vacancies (V O ) decrease, probably because the effective incorporation of O atom diminishes those donor levels.
TL;DR: In this article, a novel fabrication process and preliminary characterization of a nanomechanical resonating device, which is to be used for mass detection, is reported. But the fabrication of the device is based on laser lithography on Al coated SiO2/p++Si/SiO 2/Si O2/Si structures followed by dry and wet etching.
Abstract: We report on a novel fabrication process and preliminary characterization of a nanomechanical resonating device, which is to be used for mass detection. The fabrication of the device is based on laser lithography on Al coated SiO2/p++Si/SiO2/Si structures, followed by dry and wet etching. We have fabricated highly doped polysilicon free-hanging cantilevers and anchored drivers for lateral cantilever vibration, where the motion of the cantilever is parallel to the substrate. The cantilevers are actuated electrically by applying an ac voltage between the cantilever and driver. The laterally vibrating cantilever structures are approximately 30–50 μm in length, 1.8 μm in height, and 500 nm in width. The characterization of the resonators was performed by direct observation of the cantilever through an optical microscope. An electrical measuring technique is also presented and discussed. Typical values of resonant frequency and quality factor, at 1 atm, are approximately 500 kHz and 50, respectively. Moreover,...
TL;DR: In this article, a stereolithographic technique is presented that allows the usage of pastes composed of ceramic particles dispersed in a photocurable resin for the fabrication of alumina pieces, which exhibit a similar flexural strength than alumina parts made by classical techniques like pressing.
Abstract: Among the different rapid prototyping technologies, solid freeform fabrication (SFF) is the most suitable for ceramics. Here a stereolithographic technique is presented that allows the usage of pastes composed of ceramic particles dispersed in a photocurable resin for the fabrication of alumina pieces. They exhibit a similar flexural strength than alumina parts made by classical techniques like pressing.
TL;DR: In this article, a low-cost and simple optical lithography technique using particleenhanced laser irradiation was proposed for nanoelectronic fabrication using spherical silica particles (Duke) packaged as lowresidue aqueous suspensions.
Abstract: The field of nanoelectronics has evolved into a major area of investigation. Nanolithographic techniques such as atom beams [1, 2], electron beams [3], scanning probe tunneling [4‐6], and scanning nearfield optical lithography [7‐9] are expected to be potential methods in the fabrication of present and future nanodevices. However, due to their incompatibility with the present fabrication processing and their low throughput, the application of these methods is presently confined to the experimental stage. Meanwhile, traditional optical lithography is limited to the diffraction effect and always relates to complex system and high cost. In this letter, we report a novel, low-cost, and simple optical lithography technique using particleenhanced laser irradiation. Standard spherical silica particles (Duke [10]) packaged as low-residue aqueous suspensions were used in our experiment. The diameter of the particles is 0.5 μ m, with a deviation limited in a range of ∠ 5%. Silicon
TL;DR: In this article, the fused deposition of ceramics (FDC) technique was used to fabricate piezoelectric ceramic skeletons for the development of PZT transducers with 2-2 connectivity for medical imaging.
Abstract: The fused deposition of ceramics (FDC) technique was used to fabricate piezoelectric ceramic skeletons for the development of piezoelectric composite transducers with 2–2 connectivity for medical imaging. The green parts were designed to have 30 vol% lead zirconate titanate ceramic (PZT-5H) in the final composites. Physical characterization of the sintered samples revealed that 96% of the theoretical density was achieved. Optical microscopy showed that defects due to the FDC mode of deposition, such as small roads and bubbles, were eliminated, because of improvements in powder processing. The electromechanical properties of the final composites were similar to the properties that were obtained for conventionally made composites. A matching layer and a backing layer, as well as wires and an inductor, were added to each FDC composite to fabricate a functional medical imaging transducer. The devices were tested in water using a steel target 3.5 cm thick. Echoes from the target could be detected with all the transducers that were fabricated using FDC. The sensitivities of the transducers were similar to that of a commercial transducer. However, the ringing was much longer than that for a commercial transducer, because the backing layer was not optimized in the transducers that were fabricated using FDC.
Patent•
14 Jul 2000TL;DR: In this paper, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g. at a temperature of between about 150 °C and about 350 °C.
Abstract: In a method for bonding a silicon substrate to a III-V material substrate, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g. at a temperature of between about 150 °C and about 350 °C. The silicon substrate is then thinned. This bonding process enables the fabrication of thick, strain-sensitive and defect-sensitive optoelectronic devices on the optimum substrate for such, namely, a thick III-V material substrate, while enabling the fabrication of silicon electronic devices in a thin silicon layer, resulting from the thinned Si substrate, that is sufficient for such fabrication but which has been thinned to eliminate thermally-induced stress in both the Si and III-V materials. The III-V material substrate thickness thereby provides the physical strength of the composite substrate structure, while the thinned silicon substrate minimizes stress in the composite structure.
TL;DR: In this paper, a new fabrication method for Si single-electron transistors (SETs) is proposed, which applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate.
Abstract: A new fabrication method for Si single-electron transistors (SETs) is proposed. The method applies thermal oxidation to a Si wire with a fine trench across it on a silicon-on-insulator substrate. During the oxidation, the Si wire with the fine trench is converted, in a self-organized manner, into a twin SET structure with two single-electron islands, one along each edge of the trench, due to position-dependent oxidation-rate modulation caused by stress accumulation. Test devices demonstrated, at 40 K, that the twin SET structure can operate as two individual SET's. Since the present method produces two SET's at the same time in a tiny area, it is suitable for integrating logic circuits based on pass-transistor type logic and CMOS-type logic, which promises to lead to the fabrication of single-electron logic LSIs.
Patent•
23 Feb 2000
TL;DR: A thermoelectric-cooling temperature control apparatus for a semiconductor device fabrication facility maintains a temperature condition, such as the temperature of a wafer, stable during the fabrication process.
Abstract: A thermoelectric-cooling temperature control apparatus for a semiconductor device fabrication facility maintains a temperature condition, such as the temperature of a wafer, stable during the fabrication process. The apparatus includes a heat exchanger having a thermoelectric cooling element which produces a Peltier Effect to cause the element to absorb and radiate heat according to current flowing through the element
01 Dec 2000
TL;DR: In this article, a review of amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability is presented along with optimization of materials and processing conditions for reduced V/sub T/-shift and leakage current.
Abstract: This paper will review amorphous silicon imaging technology in terms of the detector operating principles, electrical and optoelectronic characteristics, and stability. Also, issues pertinent to thin film transistor stability will be presented along with optimization of materials and processing conditions for reduced V/sub T/-shift and leakage current. Selected results are shown for X-ray and optical detectors, thin film transistors, and integrated X-ray pixel structures. Extension of the current fabrication processes to low (<100/spl deg/C) temperature, enabling fabrication of thin film electronics on flexible (polymer) substrates, will also be discussed along with preliminary results.
TL;DR: In this article, the use of molten aluminum droplets is investigated for potential application to precision droplet-based net-form manufacturing (PDM), where final structural components are made from the raw stock in one integrated operation by depositing molten metal droplets, layer after layer, via computer information.
Abstract: The use of molten aluminum droplets is investigated for potential application to precision droplet-based net-form manufacturing (PDM). In the proposed application, final structural components are made from the raw stock in one integrated operation by depositing molten metal droplets, layer after layer, via computer information. This work investigates the feasibility of the proposed technology by investigating the issues associated with generating molten aluminum droplets from capillary stream break-up, and examining the mechanical characteristics of the fabricated aluminum components. New results are presented which illustrate the generation of stable streams of molten aluminum droplets at rates of 24,000 droplets/second for a droplet stream speed of 10.9 m/s, corresponding to throughput rates of 2.3 × 10 -4 kg/s (1.85 lb./hour). The droplets travel 2,500 droplet diameters in an inert environment before impingement with the substrate. Microstructural images are completely devoid of splat boundaries, which have been removed by remelting, and the grain size is approximately uniform throughout the field of view of the image that, in most cases presented, contains easily upwards of 30 splats. Also, it has been found that the presence of aluminum oxide in the melt does not influence the average grain size of the component. An oxide barrier however will encapsulate each grain if the oxides are not removed by filtration in the pre-jetting stage. The presence of aluminum oxide in the melt does not prohibit the removal of the splat boundaries. Mechanical analysis shows that fabrication with molten aluminum droplet deposition results in a 30 percent increase in ultimate tensile strength compared to the raw ingot stock.
31 Oct 2000
TL;DR: In this paper, a review of X-ray imaging technology in terms of detector operating principles, including optoelectronic characteristics, and fabrication process issues related to pixel (Schottky diode detector plus thin film transistor) integration is presented.
Abstract: Hydrogenated amorphous silicon (a-Si:H) technology offers a viable technological alternative for improved imaging of optical signals and high energy radiation. This paper reviews X-ray imaging technology in terms of detector operating principles, including optoelectronic characteristics, and fabrication process issues related to pixel (Schottky diode detector plus thin film transistor) integration. Recent results which describe the extension of the current fabrication processes to low (/spl sim/120/spl deg/C) temperature are also presented. The low temperature processing enables fabrication of thin electronics on flexible (polymer) substrates.
TL;DR: In this article, a simple method for the fabrication of highly ordered porous structures was described, utilizing capillary forces, ultrafine particles are directly used to assemble themselves in the voids of template while the template is being assembled.
Abstract: We describe a simple method for the fabrication of highly ordered porous structures. That is, utilizing capillary forces, ultrafine particles are directly used to assemble themselves in the voids of template while the template is being assembled. The highly ordered porous structures with larger area and uniform orientation can be produced after removing the template. The majority of the single domains with uniform orientation prepared can reach 0.1 mm2 in area. Scanning electron microscope images and transmission spectrum of these samples have confirmed the success of this simple method.
TL;DR: Tonnesen et al. as discussed by the authors presented an additive integration technology for fabrication of MEMS with an electroplating technology on top of a CMOS signal processing circuit, which can be manufactured using a low cost CMOS production line and adding the mechanical sensor elements via a specialized back-end process.
Abstract: This paper presents an additive integration technology for fabrication of MEMS with an electroplating technology on top of a CMOS signal processing circuit. It reports on the development of an inertial sensor-array device for automotive applications and shock-monitoring systems. This device can be manufactured using a low-cost CMOS production line and adding the mechanical sensor elements via a specialized back-end process. The basic fabrication process for the additive electroplating technology and a first device for inertial sensing was reported by the group at MME'97 [T. Tonnesen, O. Ludtke, J. Noetzel, J. Binder, G. Mader, Simulation, design and fabrication of electroplated acceleration switches, J. Micromech. Microeng. 7 (1997) 237–239.]. The additive electroplating technology represents a new alternative to other devices realized with bulk and surface micromachining as described, e.g., in Analog Devices [Analog Devices, Monolithic accelerometer with signal conditioning ADXL50, Application Notes, 1995.]. This paper concentrates on improvements in the fabrication technology and the development of the wafer-level capping and back-end packaging sequence for a sensor-array device, which can be manufactured within an industrial processing line.