Fabrication

About: Fabrication is a research topic. Over the lifetime, 20475 publications have been published within this topic receiving 235676 citations.

Design of sealed cavity microstructures formed by silicon wafer bonding

Abstract: Three fabrication issues related to the design and fabrication of micromechanical devices using sealed cavities within bonded silicon wafers are discussed. The first concerns the resultant residual gas pressure within a sealed cavity between two bonded wafers after bonding and a high-temperature anneal. The second concerns the prediction of plastic deformation in capping layers of single-crystal silicon over sealed cavities. Exposure of sealed cavity structures to a high-temperature environment causes the trapped residual gas to expand, which can result in the plastic deformation of the capping layer. A model for analytically predicting the occurrence of plastic deformatio in these silicon capping layers has been developed. The third fabrication issue concerns the prediction of the resultant height of plastically deformed capping layers of silicon after cooling. A model which gives a lower and an upper bound on the height, based on an analytical spherical shell membrane stress equation, has been developed. >

Electrons as "invisible ink": fabrication of nanostructures by local electron beam induced activation of SiOx.

Abstract: The injection or removal of electrons can be used to trigger chemical processes, such as bond formation or dissociation. In this regard, electrons are an excellent and “clean” tool to modify or engineer the properties of different materials. The availability of localized electron probes, for example, in scanning electron microscopy (SEM), has made it possible to apply electron-induced processes on the nanometer and subnanometer scale. This approach can be used to target the generation of extremely small, pure nanostructures with lithographic control, which is one of the main goals in nanotechnology. The starting point of our study was the electron beam induced deposition (EBID) technique. The principle of EBID is outlined in Scheme 1a–c. A highly focused electron beam locally decomposes adsorbed precursor molecules to leave a deposit of nonvolatile fragments. The importance of EBID recently increased since it superseded focused ion beam processing as a method to repair lithographic masks in the semiconductor industry. The underlying physical and chemical principles of electron-induced bond making and breaking are in general also of great interest for important technological applications such as electron beam lithography (EBL), which is the standard method of generating the masks for UV lithography. As there is a large variety of precursor molecules and there are nearly no restrictions in regard to the substrate, EBID allows almost every combination of deposit material and substrate to be targeted. As a prototype example for conductive structures on an insulating material, our aim here was to generate clean iron nanostructures on a SiOx layer on Si(001). Scheme 1a–c depicts a schematic representation of

System and apparatus for using test structures inside of a chip during the fabrication of the chip

Abstract: The fabrication of the wafer may be analyzed starting from when the wafer is in a partially fabricated state. The value of a specified performance parameter may be determined at a plurality of locations on an active area of a die of the wafer. The specified performance parameter is known to be indicative of a particular fabrication process in the fabrication. Evaluation information may then be obtained based on a variance of the value of the performance parameter at the plurality of locations. This may be done without affecting a usability of a chip that is created from the die. The evaluation information may be used to evaluate how one or more processes that include the particular fabrication process that was indicated by the performance parameter value was performed.

Fabrication of molded chalcogenide-glass lens for thermal imaging applications.

Abstract: With the recent development of less costly uncooled detector technology, expensive optics are among the remaining significant cost drivers. As a potential solution to this problem, the fabrication of IR lenses using chalcogenide glass has been studied in recent years. We report on the fabrication of a molded chalcogenide-glass lens for car night vision and on the evaluation of the lens. The moldability of chalcogenide glass was characterized through transcription properties of the mold's surface. In addition, both IR transmittance and x-ray diffraction patterns of the molded chalcogenide-glass lens were evaluated to verify the compositional and structural stability of the glass material under the given molding conditions.

Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

Abstract: Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors.