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Fabrication

About: Fabrication is a research topic. Over the lifetime, 20475 publications have been published within this topic receiving 235676 citations.


Papers
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Journal ArticleDOI
20 Mar 2012-ACS Nano
TL;DR: This paper presents a scalable method for fabrication of self-aligned graphene transistors by defining a T-shaped gate on top of graphene, followed by self- aligned source and drain formation by depositing Pd with the T-gate as a shadow mask, which provides significant advantages such as elimination of misalignment.
Abstract: Exceptional electronic properties of graphene make it a promising candidate as a material for next generation electronics; however, self-aligned fabrication of graphene transistors has not been fully explored. In this paper, we present a scalable method for fabrication of self-aligned graphene transistors by defining a T-shaped gate on top of graphene, followed by self-aligned source and drain formation by depositing Pd with the T-gate as a shadow mask. This transistor design provides significant advantages such as elimination of misalignment, reduction of access resistance by minimizing ungated graphene, and reduced gate charging resistance. To achieve high-yield scalable fabrication, we have combined the use of large-area graphene synthesis by chemical vapor deposition, wafer-scale transfer, and e-beam lithography to deposit T-shaped top gates. The fabricated transistors with channel lengths in the range of 110-170 nm exhibited excellent performance with peak current density of 1.3 mA/μm and peak transconductance of 0.5 mS/μm, which is one of the highest transconductance values reported. In addition, the T-gate design enabled us to achieve graphene transistors with extrinsic current-gain cutoff frequency of 23 GHz and maximum oscillation frequency of 10 GHz. These results represent important steps toward self-aligned design of graphene transistors for various applications.

70 citations

Proceedings Article
01 Jan 2003
TL;DR: This summary of selected microelectromechanical systems (MEMS) processes guides the reader through a wide variety of fabrication techniques used to make micromECHanical structures.
Abstract: This summary of selected microelectromechanical systems (MEMS) processes guides the reader through a wide variety of fabrication techniques used to make micromechanical structures. Process flows include wet bulk etching and wafer bonding, surface micromachining, deep trench silicon micromachining, CMOS MEMS, and micromolding.

70 citations

Journal ArticleDOI
TL;DR: In this paper, a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1-2 μm) dimension was described.
Abstract: In this letter we describe a procedure for high quality molecular beam epitaxy (MBE) growth over finely patterned GaAs substrates which is suitable for device fabrication requiring lateral definition of small (∼1–2 μm) dimension. This method was used for the fabrication of index guided laser arrays. Yields of individual lasers exceeded 90%, and thresholds were uniform to 10%. Temperature and flux ratio dependence of faceting during MBE growth over patterned substrates is shown for temperatures ranging from 580 to 700 °C and for As/Ga flux ratios from 1.4:1 to 4:1. The real index guided structure, which can be formed by a single MBE growth over a ridged substrate, is discussed. This technique should prove useful in the fabrication of devices which take advantage of unique features formed during regrowth by MBE.

70 citations

Patent
11 Feb 2016
TL;DR: In this article, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps, in turn reducing the overall cost and complexity of fabrication.
Abstract: Embodiments of the present invention provide a replacement metal gate and a fabrication process with reduced lithography steps. Using selective etching techniques, a layer of fill metal is used to protect the dielectric layer in the trenches, eliminating the need for some lithography steps. This, in turn, reduces the overall cost and complexity of fabrication. Furthermore, additional protection is provided during etching, which serves to improve product yield.

70 citations

Journal ArticleDOI
TL;DR: In this paper , a review of metal-organic frameworks (MOFs)-based flexible solid-state supercapacitors (FSSCs) is presented, and a summary of the overall electrochemical performances and current development of the reported MOFs-based material assembled devices are presented gradually to predict the future tendency toward the actualization of an ultimate performance MOFsbased FSSC.

69 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20241
20235,291
202210,627
2021845
2020805
2019944