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Fabrication

About: Fabrication is a research topic. Over the lifetime, 20475 publications have been published within this topic receiving 235676 citations.


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Journal ArticleDOI
TL;DR: In this paper, polypyrrole-coated multiwalled carbon nanotubes (PPy-MWCNT) were used for the fabrication of activated carbon-coating MWCNT doped with nitrogen (N-AC-MWCLNT) electrodes with high mass loading in the range of 15-35 mg cm-2 and with a high active material to current collector mass ratio of 0.21-0.50.
Abstract: Polypyrrole-coated multiwalled carbon nanotubes (PPy-MWCNT) were used for the fabrication of activated carbon-coated MWCNT doped with nitrogen (N-AC-MWCNT). The conceptually new method for the fabrication of non-agglomerated PPy-MWCNT with good coating uniformity allowed the fabrication of uniform and well-dispersed N-AC-MWCNT with high surface area. The use of N-AC-MWCNT allowed the fabrication of supercapacitor electrodes with high mass loading in the range of 15–35 mg cm–2 and with a high active material to current collector mass ratio of 0.21–0.50. The N-AC-MWCNT electrodes showed excellent electrochemical performance in aqueous 0.5 M Na2SO4 electrolyte. The maximum specific capacitance of 3.6 F cm–2 (103.1 F g–1) was achieved for mass loading of 35 mg cm–2 at a scan rate of 2 mV s–1. The aqueous supercapacitor cells, based on N-AC-MWCNT electrodes, exhibited excellent performance with energy density of 16.1 mWh g–1, power density of 14.4 W g–1, and enlarged voltage window of 1.8 V. The individual ele...

200 citations

Journal ArticleDOI
TL;DR: In this paper, a new wire-conductor fabrication method was developed for Cu Ag alloys containing 6-24 wt% Ag in which ultra-high strength and high conductivity were obtained by cold drawing combined with intermediate heat treatments.

198 citations

Journal ArticleDOI
01 Sep 1995-Nature
TL;DR: In this article, the authors show that the dielectric constant of Ta2O5 can be increased by nearly a factor of four, from 35 to 126, through the addition of 8% titanium oxide, TiO2.
Abstract: MICROELECTRONICS research is in large part driven by the demand for smaller components with enhanced performance. For capacitive components, which form the basis of many memory devices, the dielectric constant limits the degree of miniaturization—a limit that is now being approached for the materials currently in use. For this reason, exotic compounds with high dielectric constants, such as barium strontium titanate, are being widely investigated1. But such materials invariably incorporate chemical elements foreign to current microelectronics fabrication procedures, and must pass extensive compatibility tests before they can be used commercially. From a compatibility point of view, tantalum oxide, Ta2O5, is considered more promising2-5 (although its dielectric properties are more modest), and it is known to form high-quality thin films in conventional fabrication processes. Here we show that the dielectric constant of Ta2O5 can be increased by nearly a factor of four — from 35 to 126—through the addition of 8% titanium oxide, TiO2. The minimum area of capacitive components prepared from this material should be reduced by the same factor, and as both tantalum and titanium are compatible with fabrication processes currently in use, the material shows great promise for future microelectronics applications.

198 citations

Journal ArticleDOI
TL;DR: In this paper, the authors present the SAMLAB-ARTICLE-2000-004 Record created on 2009-05-12, modified on 2016-08-08 and used for the purpose of research.
Abstract: Note: 243 Reference SAMLAB-ARTICLE-2000-004 Record created on 2009-05-12, modified on 2016-08-08

197 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20241
20235,291
202210,627
2021845
2020805
2019944