Topic
Fabrication
About: Fabrication is a research topic. Over the lifetime, 20475 publications have been published within this topic receiving 235676 citations.
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TL;DR: In this article, germanium-seeded lateral crystallization of amorphous silicon was used for the fabrication of 100-nm channel-length thin-film transistors.
Abstract: We report on 100-nm channel-length thin-film transistors (TFTs) that are fabricated using germanium-seeded lateral crystallization of amorphous silicon. Germanium seeding allows the fabrication of devices with control over grain boundary location. Its effectiveness improves with reduced device geometry, allowing "single-grain" device fabrication. In the first application of this technology to deep submicron devices, we report on 100-nm devices having excellent performance compared to conventional TFTs, which have randomly located grains. Devices have on-off ratio >10/sup 6/ and subthreshold slope of 107 mV/decade, attesting to the suitability of germanium-seeding for the fabrication of high-performance TFTs, suitable for use in vertically integrated three-dimensional (3-D) circuits.
148 citations
TL;DR: In this article, a modified NIL-technique for the fabrication of nm-structures is presented, based on the photopolymerization of special resits through a quartz mold.
147 citations
TL;DR: The first three-dimensional detectors with n and p electrodes that penetrate through the silicon substrate have been fabricated as mentioned in this paper, and their expected properties, including low depletion voltages, wide voltage plateaus before leakage current limits are reached, and rapid charge collection are reviewed.
Abstract: The first three-dimensional detectors with n and p electrodes that penetrate through the silicon substrate have been fabricated. Some expected properties, including low depletion voltages, wide voltage plateaus before leakage current limits are reached, and rapid charge collection are reviewed. Fabrication steps and initial test results for leakage currents and infrared signal detection are covered. The authors conclude with a description of current work, including fabrication of active-edge detectors, ones with sensitive areas that should extend to their physical edge.
147 citations
146 citations
TL;DR: The ultrathin In2O3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to the channel surface; the ability to detect subnanomolar concentrations of dopamine is demonstrated.
Abstract: We demonstrate straightforward fabrication of highly sensitive biosensor arrays based on field-effect transistors, using an efficient high-throughput, large-area patterning process. Chemical lift-off lithography is used to construct field-effect transistor arrays with high spatial precision suitable for the fabrication of both micrometer- and nanometer-scale devices. Sol-gel processing is used to deposit ultrathin (∼4 nm) In2O3 films as semiconducting channel layers. The aqueous sol-gel process produces uniform In2O3 coatings with thicknesses of a few nanometers over large areas through simple spin-coating, and only low-temperature thermal annealing of the coatings is required. The ultrathin In2O3 enables construction of highly sensitive and selective biosensors through immobilization of specific aptamers to the channel surface; the ability to detect subnanomolar concentrations of dopamine is demonstrated.
145 citations